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    MOTOROLA AN938 Search Results

    MOTOROLA AN938 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
    AS8397- Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc

    MOTOROLA AN938 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MRF548

    Abstract: MRF531 MRF548 MOTOROLA MRF542 MRF531 motorola LG CRT MRF534 motorola AN938
    Text: I MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 MOTOROLA 00^4730 2 ■MOTb - T - 3 3 - ¿ ^5 SEMICONDUCTOR TECHNICAL DATA MRF531 The R F Line HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for high voltage and high current f j switching appli­


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    b3b72S4 MRF531 MRF542 AN938, MRF542, MRF548 00R4741 T-33-05 MRF548 MRF531 MRF548 MOTOROLA MRF531 motorola LG CRT MRF534 motorola AN938 PDF

    motorola 1N4148

    Abstract: motorola AN938 an938 MRF553 motorola rf Power Transistor ferrite L8 1N4148 302-J-1 MRF5536
    Text: MOTOROLA Order this document by MRF553/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF553 Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics


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    MRF553/D MRF553 MRF553/D* motorola 1N4148 motorola AN938 an938 MRF553 motorola rf Power Transistor ferrite L8 1N4148 302-J-1 MRF5536 PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    AN938

    Abstract: motorola AN938 motorola rf Power Transistor MRF557 MRF557/D
    Text: MOTOROLA Order this document by MRF557/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF557 Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics


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    MRF557/D MRF557 MRF557/D* AN938 motorola AN938 motorola rf Power Transistor MRF557 MRF557/D PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    MRF557

    Abstract: No abstract text available
    Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line NPN Silicon RF Low Power TVansistor . . . designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W


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    MRF557 MRF557 PDF

    motorola AN938

    Abstract: MRF555 AN938 motorola rf Power Transistor 15 w RF POWER TRANSISTOR NPN
    Text: MOTOROLA Order this document by MRF555/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF555 Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W


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    MRF555/D MRF555 MRF555/D* motorola AN938 MRF555 AN938 motorola rf Power Transistor 15 w RF POWER TRANSISTOR NPN PDF

    AN-938

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB


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    MRF553 AN-938 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pou1 = 1.5 W Common Emitter Power Gain = 12.5 dB Typ


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    MRF555 PDF

    1h31

    Abstract: J107 DIODE J57 diode j143
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor . . . designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum G ain = 11.5 dB


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    MRF553 1h31 J107 DIODE J57 diode j143 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MRF553/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF553 Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics


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    MRF553/D MRF553 PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    ferroxcube 56-590-65

    Abstract: motorola AN938
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed prim arily for wideband large signal predriver stages in the 800 MHz frequency range. • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB


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    MRF557 ferroxcube 56-590-65 motorola AN938 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor Designed prim arily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB


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    MRF557 PDF

    mrf555

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon RF Low Pow er Transistor MRF555 Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB Typ


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    MRF555 MRF555 PDF

    BH Rf transistor

    Abstract: AN-938 AN938
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed prim arily for w ideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics O utput Power = 1.5 W Minim um Gain = 11.5 dB


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    StF553 MRF553 BH Rf transistor AN-938 AN938 PDF

    j134 transistor

    Abstract: MRF555
    Text: MOTOROLA • SEMICONDUCTOR TECH N ICA L DATA The R F Line NPN Silicon RF Low Power Transistor . . . designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB Typ


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    MRF555 j134 transistor PDF

    transistor 2469

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for w ideband large signal predriver stages in the V H F frequency range. • Specified @ 12.5 V, 175 M H z Characteristics O utput Pow er = 1 .5 W 1.5 W, 175 MHz


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    above2-469 MRF553 transistor 2469 PDF

    motorola AN938

    Abstract: motorola gm 900 317D-01 AN938 MHW2000 MHW2001 MHW2002 capacitor iesa
    Text: Order this data sheet by MHW2000/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8F& Product Preview Monolithic RF MHW2000 MHW2001 MHW20Q2‘. 8’ ‘ pw -r Three-stage silicon monolithic RF amplifier designed primarily for land-mobile radio transmitter exciters. Biasing networks and interstate dc blocks are included on-chip. All


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    MHW2000/D MHW2000 MHW2001 MHW20Q2 MK145BP, MHW2002 motorola AN938 motorola gm 900 317D-01 AN938 MHW2000 MHW2001 MHW2002 capacitor iesa PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silicon RF Low Power Transistor D e signed primarily for wideband large signal predriver stage s in the U H F frequency range. • Specified @ 12.5 V, 470 M H z Characteristics @ P out = 1.5 W C om m on Emitter Pow er G ain = 12;5 dB Typ


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    MRF555 PDF

    transistor j37

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MRF557/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF557 D esigned p rim a rily for w id e b a n d large sig n a l p re d riv e r s ta g e s in th e 800 MHz frequency range. • Specified a 12.5 V, 870 MHz Characteristics


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    MRF557/D MRF557 transistor j37 PDF

    motorola AN938

    Abstract: MRF567 mrf56
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line 1.5 W 870 M H z RF LOW POWER TRANSISTOR NPN SILICON RF LOW POWER TRANSISTOR N P N SILICON . . . d e s ig n e d p rim a rily fo r w id e b a n d large s ig n a l p redrive r stages in the 800 M H z fre q u en cy range.


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    MRF557 motorola AN938 MRF567 mrf56 PDF

    UC3843 spice model

    Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
    Text: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,


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    BR101/D ECL300, UC3843 spice model project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613 PDF

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


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    PDF