bc352
Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
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MPS5142
MPS5143
2N998
2N3677
2N2411
2N1991
PN5143
2N5143
2N2802
2N2803
bc352
KM90
BC370
K9015
2N3341
2N5242
OC201
2u 64 diode
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BC352* CSR
Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
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MPS5142
MPS5143
2N998
2N3677
2N2411
2N1991
PN5143
2N5143
2N2802
2N2803
BC352* CSR
csr BC352
2N936
Emihus
2N828
Bc352
LOW-POWER SILICON PNP
2N850
transitron
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MGY40N60D
Abstract: motorola 6810
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY40N60D/D
MGY40N60D
IGBTMGY40N60D/D
MGY40N60D
motorola 6810
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Transistor motorola 418
Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW12N120D/D
MGW12N120D
MGW12N120D/D*
Transistor motorola 418
mosfet amp ic
MGW12N120D
305 Power Mosfet MOTOROLA
305 Mosfet MOTOROLA
Motorola 720 transistor
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mgy20n120d
Abstract: IGBT 250 amp
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY20N120D/D
MGY20N120D
mgy20n120d
IGBT 250 amp
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MGW12N120D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW12N120D/D
MGW12N120D
MGW12N120D
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BC237
Abstract: sot23 transistor marking JY
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAV199LT1
BAV199LT3
inch/10
BAV199LT1
236AB)
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
sot23 transistor marking JY
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BC237
Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAV170LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAV170LT1
BAV170LT3
inch/10
BAV170LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
2N2904
bf245b equivalent
SOT23 Marking JX
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transistor IC 1557 b
Abstract: MGW20N60D motorola 803 transistor
Text: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW20N60D/D
MGW20N60D
MGW20N60D/D*
transistor IC 1557 b
MGW20N60D
motorola 803 transistor
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mosfet amp ic
Abstract: transistor motorola 236 MGY25N120D
Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY25N120D/D
MGY25N120D
MGY25N120D/D*
mosfet amp ic
transistor motorola 236
MGY25N120D
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BC237
Abstract: TRANSISTOR bc177b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAW156LT1
BAW156LT3
inch/10
BAW156LT1
236AB)
Junc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
TRANSISTOR bc177b
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transistor MJ 122
Abstract: MGY40N60D
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY40N60D/D
MGY40N60D
MGY40N60D/D*
TransistorMGY40N60D/D
transistor MJ 122
MGY40N60D
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MGY30N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY30N60D/D
MGY30N60D
MGY30N60D/D*
TransistorMGY30N60D/D
MGY30N60D
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NT 407 F MOSFET TRANSISTOR
Abstract: transistor motorola 359 Motorola 720 transistor 740 MOSFET TRANSISTOR MGY20N120D 720 transistor transistor motorola 236
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY20N120D/D
MGY20N120D
MGY20N120D/D*
NT 407 F MOSFET TRANSISTOR
transistor motorola 359
Motorola 720 transistor
740 MOSFET TRANSISTOR
MGY20N120D
720 transistor
transistor motorola 236
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MGY30N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY30N60D/D
MGY30N60D
MGY30N60D/D*
TransistorMGY30N60D/D
MGY30N60D
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transistor IC 1557 b
Abstract: MGW20N60D 1557 b transistor 305 Power Mosfet MOTOROLA
Text: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW20N60D/D
MGW20N60D
MGW20N60D/D*
transistor IC 1557 b
MGW20N60D
1557 b transistor
305 Power Mosfet MOTOROLA
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340G-02
Abstract: MGY20N120D
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY20N120D/D
MGY20N120D
340G-02
MGY20N120D
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MGY25N120D
Abstract: 340G-02
Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY25N120D/D
MGY25N120D
MGY25N120D
340G-02
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MGW12N120D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW12N120D/D
MGW12N120D
MGW12N120D
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BC237
Abstract: 2n2222a SOT223 5161 common anode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for
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OT-223
MV7005T1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2n2222a SOT223
5161 common anode
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BC237
Abstract: application notes BF245A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Anode ANODE 3 BAW56LT1 Motorola Preferred Device CATHODE 1 2 CATHODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)
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BAW56LT1
236AB)
Un218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
application notes BF245A
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)
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BAV70LT1
236AB)
Uni218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: bc547 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode MMBD7000LT1 Motorola Preferred Device 1 ANODE 3 CATHODE/ANODE 2 CATHODE 3 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge)
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MMBD7000LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
bc547 equivalent
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Motorola 417
Abstract: BAS116LT1 BAS116LT3 lp "sot23 marking motorola" a01102
Text: MOTOROLA SC DIODES/OPTO bûE ]> • b3b725S 00073^1 M*îT ■■ M0T7 Order this data sheet by BAS116LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAS116LT1 Sw itching Diode Motorola Preferred Device This switching diode has the following features:
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OCR Scan
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PDF
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b3b725S
BAS116LT1
BAS116LT3
inch/10
BAS116LT1/D
BAS116LT1
OT-23
O-236AB)
Motorola 417
lp "sot23 marking motorola"
a01102
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