MURD310
Abstract: MURD305 MURD315 MURD320 motorola dpak 305
Text: IMOTOROLA m SEMICONDUCTOR TECHNICAL DATA Switehmode Power MURD305 MuRD3~o MURD345~?’t$ , MURQ~zO ,+,‘Q3 Z? Rectifiers DPAK Surface Mount Package .designed these for use in switching state-of-the-art @ Ultrafast devices 35 Nanosecond @ Low Forward
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MURD305
MURD345
81akelands
MK145BP,
MURD310
MURD315
MURD320
MURD310
MURD305
MURD315
MURD320
motorola dpak 305
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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transistor A106
Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
Text: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A
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LM2639
T025A2
OT-23
SMDIP-10
SO-24
205Inductor
A6S-0104
transistor A106
transistor PNP A105
transistor pnp a110
TRANSISTOR A107
a69 156 transistor
A94 TRANSISTOR A114
TRANSISTOR a105
A107 capacitor
TRANSISTOR A98
motorola mosfet
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74ls74apc
Abstract: HD74ls04p 74LVC1G04ady8 semiconductor AZ431BZ-AE1 HCF4060BE HEF4093BP datasheet free download ne5334 hd74hc132p dm74ls47n
Text: Standard Linear and Logic Products Cross-Reference Introduction Notice This Standard Linear and Logic Products CrossReference will assist in finding a device made by Texas Instruments that is a drop-in or similar replacement to many of our competitors’ standard linear and logic products.
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BU108
Abstract: D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS The BUL43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light
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BUL43B
BUL43B
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
BU108
D45C
electronic ballast with MJE13003
NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247
BDX54
BU326
BU100
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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motorola D101
Abstract: R012F n101a sanyo WG capacitors motorola d102 2C201 sanyo capacitor wg sanyo capacitor WF ERIE ceramic capacitor C101 Transistor
Text: MAX767 Evaluation Kit _Features ♦ Fixed 3.3V Output Voltage ±4% ♦ Up to 1.5A and 5A Output Currents ♦ 120µA Standby Supply Current ♦ 700µA Quiescent Supply Current ♦ 300kHz Switching Frequency ♦ More than 90% Efficiency
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MAX767
300kHz
20-Pin
MAX767EVKIT-SO
motorola D101
R012F
n101a
sanyo WG capacitors
motorola d102
2C201
sanyo capacitor wg
sanyo capacitor WF
ERIE ceramic capacitor
C101 Transistor
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MC1723
Abstract: MC1723 applications TL495C MPSU51A equivalent MPSU51A
Text: MC1404 Voltage Reference Family The MC1404 of ICs is a family of temperature–compensated voltage references for precision data conversion applications, such as A/D, D/A, V/F, and F/V. Advances in laser–trimming and ion–implanted devices, as well as monolithic fabrication techniques, make these devices stable and accurate
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MC1404
MC1723
MC1723 applications
TL495C
MPSU51A equivalent
MPSU51A
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siemens automotive relay dc 12v
Abstract: Bsp78
Text: June 2010 Know How Guide IntelliFET - low side self-protected MOSFET Features Benefits • Load dump protection • Designed for harsh operating environments without the need for extra clamps. • Thermal shutdown non-latching auto restart • Self-protecting when in high
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D-81541
A1103-04,
siemens automotive relay dc 12v
Bsp78
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MC34181D
Abstract: 2304 sot 353
Text: MC34181,2,4 MC33181,2,4 Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33181/2/4, MC34181/2/4 series of monolithic operational amplifiers. This JFET input series of operational amplifiers operates at
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MC34181
MC33181/2/4,
MC34181/2/4
MC34181D
2304 sot 353
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Motorola transistors MJE3055
Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •
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MJE2955
MJE3055
1Ol50Â
MJD6036
MJD3039
Motorola transistors MJE3055
Motorola transistors MJE2955
IC TC 3588
MJE2955 power amplifier circuit
mje3055
transistor MJE3055
1N5825
MJD2955
30 amp npn transistor
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MOTOROLA 3055V
Abstract: 3055VL 3055V
Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate
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MTD3055VL/D
MOTOROLA 3055V
3055VL
3055V
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MOTOROLA 3055V
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3055V TMOS V Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTD3055V/D
TD3055V
MOTOROLA 3055V
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JE3055
Abstract: JE2955 current pm ic 3846 3055 npn mt 3055
Text: MOTOROLA SC X STR S /R F IS E D | b3b725>l ODBSSSI 1 | DPAK For Surface Mount Applications PIMP M JD2955 NPN M JD3055 T -3 ¡ Íf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complem entary Pow er Transistors Designed for general purpose am plifier and low speed switching applications.
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b3b725
JE2955
JE3055
JD2955
JD3055
current pm ic 3846
3055 npn
mt 3055
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MURD310
Abstract: MURD305 MURD315 murd
Text: MOTOROLA SC D I O D E S / O P T O L4E » • fc,3L7E5S 0 0 f l b 5 3 4 bT=5 ■ M O T ? MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE Pow er R ectifiers DPAK Surface Mount Package . . . designed fo r use in switching power supplies, inverters and as free wheeling diodes,
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MURD305
MURD310
MURD315
MURD320
MURD320
MURD305,
MURD310,
MURD315,
murd
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murd310
Abstract: MURD305 smc diodes motorola
Text: MOTOROLA SC Í D I O D E S / O P T O } 1EE D I b3ti725S 0 0 7 ^ 0 0 1 T | „ 1-03-15* MOTOROLA • I SEMICONDUCTOR TECHNICAL DATA S w itc h m o d e P o w er R ectifiers DPAK Surface M ount Package . . . designed fo r use in switching power supplies, inverters and as free wheeling diodes,
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b3ti725S
MURD305
MURD310
MURD315
MURD320
00/line-line.
smc diodes motorola
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B 835L
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRD835L/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power R ectifier M B R D 835L DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free
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MBRD835L/D
3b72SS
B 835L
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transistor Amp 3055
Abstract: J03055 L 3055 motorola Motorola transistors MJE2955 Motorola transistors MJE3055 2955m transistor MJE3055 motorola JD2955 "2955m motorola 3055
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD2955 Com plem entary Power TVansistors PNP M JD3055 DPAK For Surface Mount Applications *M otxola Preferred Dtvlc* Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix
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MJE2955
MJE3055
JD2955
JD3055
transistor Amp 3055
J03055
L 3055 motorola
Motorola transistors MJE2955
Motorola transistors MJE3055
2955m
transistor MJE3055 motorola
"2955m
motorola 3055
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3055E
Abstract: D3055 atech
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is
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3055E
Y145M.
D3055
atech
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount M o t o r o la P re fe rre d D e v ic e TMOS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate
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0E-05
0E-04
0E-01
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3055vl
Abstract: Motorola 3055vl 3055vl motorola
Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This
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MTD3055VL/D
3055VL
3055vl
Motorola 3055vl
3055vl motorola
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4614 mosfet
Abstract: MOTOROLA 3055V 3055VL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This
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0E-03
0E-02
0E-01
4614 mosfet
MOTOROLA 3055V
3055VL
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12W 04 SMD MOSFET
Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Text: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers
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NMT90Q/TACS
PF0010
2SJ291
220AB
2SJ192
2SJ293
220FM
2SJ294
2SJ29S
2SJ296
12W 04 SMD MOSFET
PF1002
PF0012
mosfet 12w smd
PF0022
pf0017b
12W SMD MOSFET
PF0027
pf0030 hitachi
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transistor book
Abstract: N1408 Uraco Technologies Nippon capacitors UC5608
Text: BR1486/D M M OTOROLA SCSI Terminators Precision Switchable SCSI Terminators DATA SHEET CLASSIFICATIONS Product Preview This heading on a data sheet indicates that the device is in the formative stages or in design (under development). The disclaimer at the bottom of the first page reads: “This
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BR1486/D
BR1486
3PHX32472-1
transistor book
N1408
Uraco Technologies
Nippon capacitors
UC5608
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