CTB110
Abstract: MHW7142 XMD110
Text: MOTOROLA Order this document by MHW7142/D SEMICONDUCTOR TECHNICAL DATA The RF Line 750 MHz CATV Conventional Hybrid Amplifier MHW7142 Designed specifically for 750 MHz CATV applications. Features ion–implanted arsenic emitter transistors with an all gold metallization system.
|
Original
|
PDF
|
MHW7142/D
MHW7142
CTB110
MHW7142
XMD110
|
RF NPN POWER TRANSISTOR C 10-50 GHZ
Abstract: 3 pin TRIMMER capacitor ATC100A MJD31C MRF6408 smd z12 transistor 6 pin SMD Z2 37281 smd transistor z4
Text: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers
|
Original
|
PDF
|
MRF6408/D
MRF6408
MRF6408/D*
RF NPN POWER TRANSISTOR C 10-50 GHZ
3 pin TRIMMER capacitor
ATC100A
MJD31C
MRF6408
smd z12
transistor 6 pin SMD Z2
37281
smd transistor z4
|
SMD Transistor z6
Abstract: 37281 transistor 6 pin SMD Z2 transistor SMD Z2 motorola 986 MRF6408 z11 smd SMD 1206 RESISTOR 100 OHMS smd z5 transistor transistor amplifier 3 ghz 10 watts
Text: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers
|
Original
|
PDF
|
MRF6408/D
MRF6408
SMD Transistor z6
37281
transistor 6 pin SMD Z2
transistor SMD Z2
motorola 986
MRF6408
z11 smd
SMD 1206 RESISTOR 100 OHMS
smd z5 transistor
transistor amplifier 3 ghz 10 watts
|
Transistor motorola 513
Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
Text: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed
|
Original
|
PDF
|
TP5002S/D
TP5002S
TP5002S
TP5002S/D*
Transistor motorola 513
TRANSISTOR ML1
MOTOROLA TRANSISTOR 726
MOTOROLA POWER TRANSISTOR
1N4148
BD136
motorola rf Power Transistor
uhf amplifier design Transistor
|
Motorola Power Transistor Data Book
Abstract: BAS16 MRF6409 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
|
Original
|
PDF
|
MRF6409/D
MRF6409
MRF6409
Motorola Power Transistor Data Book
BAS16
DL110
motorola rf Power Transistor
NT 407 F TRANSISTOR
|
MHW5382A
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV AMPLIFIER MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization
|
Original
|
PDF
|
MHW5382A/D
MHW5382A
MHW5382A/D*
MHW5382A
|
MHW6142
Abstract: 5Bp power
Text: MOTOROLA Order this document by MHW6142/D SEMICONDUCTOR TECHNICAL DATA The RF Line 550 MHz CATV Amplifier MHW6142 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization
|
Original
|
PDF
|
MHW6142/D
MHW6142
MHW6142/D*
MHW6142
5Bp power
|
BAS16
Abstract: MRF6409 DL110
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
|
Original
|
PDF
|
MRF6409/D
MRF6409
MRF6409
BAS16
DL110
|
MHW6182
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW6182/D SEMICONDUCTOR TECHNICAL DATA The RF Line 550 MHz CATV Amplifier MHW6182 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization
|
Original
|
PDF
|
MHW6182/D
MHW6182
MHW6182
|
MHW6222
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW6222/D SEMICONDUCTOR TECHNICAL DATA The RF Line 550 MHz CATV Amplifier MHW6222 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization
|
Original
|
PDF
|
MHW6222/D
MHW6222
MHW6222
|
MHW5182A
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW5182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5182A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization
|
Original
|
PDF
|
MHW5182A/D
MHW5182A
MHW5182A
|
MHW6182
Abstract: MHW-6182
Text: MOTOROLA Order this document by MHW6182/D SEMICONDUCTOR TECHNICAL DATA The RF Line 550 MHz CATV Amplifier MHW6182 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization
|
Original
|
PDF
|
MHW6182/D
MHW6182
MHW6182/D*
MHW6182
MHW-6182
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF Line CA922 CA922A VHF/UHF CATV Amplifiers Designed for broadband applications requiring low–distortion and high output capability. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold
|
Original
|
PDF
|
CA922/D
DIN45004B
CA922A)
CA922
CA922A
CA922/D
CA922/D*
|
transistor BD 135
Abstract: capacitor J336 J336 transistor k 2843 TPV8200B EQUIVALENT OF K 2843
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza
|
OCR Scan
|
PDF
|
TPV8200B
TPV8200B
156-C
transistor BD 135
capacitor J336
J336
transistor k 2843
EQUIVALENT OF K 2843
|
|
|
bd135 equivalent
Abstract: irt 840 1509-50 TP3062 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR
Text: MOTOROLA SC XSTRS/R F b=)E D b3b7254 D1GDT0G 172 noT b MOTOROLA I SEMICONDUCTOR • ■ TECHNICAL DATA The RF Line U H F P o w er Tkransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold
|
OCR Scan
|
PDF
|
b3b7254
TP3062
TP3062
bd135 equivalent
irt 840
1509-50
J890
bd135 N
rBE BD135
BD135
35 W 960 MHz RF POWER TRANSISTOR NPN
BD135 TRANSISTOR
|
b0135
Abstract: TP3015 MOTOROLA POWER TRANSISTOR 14 3B2S 1N4148 motorola rf Power Transistor mobile rf power amplifier transistor TRANSISTOR B0135 NPN 0/TRANSISTOR NPN B0135
Text: MOTOROLA SC XSTRS/R F 4bE J> m b3b7254 DGTSEGM 3 MOTOROLA ” 33" 07 SEMICONDUCTOR TECHNICAL DATA TP3015 The RF Line UHF P o w er T ran sisto r The TP3015 is designed fo r 900 MHz m obile stations in both analog and digital appli cations. It incorporates high value em itter ballast resistors, gold metallizations and offers
|
OCR Scan
|
PDF
|
b3b725H
TP3015
TP3015
915-f
T-33-07
b0135
MOTOROLA POWER TRANSISTOR 14
3B2S
1N4148
motorola rf Power Transistor
mobile rf power amplifier transistor
TRANSISTOR B0135 NPN
0/TRANSISTOR NPN B0135
|
tp2304
Abstract: 88MHZ Arco 423
Text: 12E D | MOTOROLA t,3 t . ? a S 4 MOTOROLA SC O G flaaiS X S T R S /R 0 I F SEMICONDUCTOR TECHNICAL DATA TP2304 The RF Line VH F Power Transistor The TP2304 is designed for use in 12,5 V VHF amplifiers operating underdass A, B or C conditions. Its construction which incorporates gold metallization and diffused ballast resistors for
|
OCR Scan
|
PDF
|
TP2304
TP2304
88MHZ
Arco 423
|
CATV MHW
Abstract: MHW7185A motorola mhw 110
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW7185A MHW7205A High Output Power Doubler 750 MHz CATV Amplifiers Designed specifically for 750 M H z CATV applications. Features ionimplanted, arsenic emitter transistors with an all gold metallization system.
|
OCR Scan
|
PDF
|
MHW7185A
MHW7205A
MHW7205A
CATV MHW
motorola mhw 110
|
110nF
Abstract: SO110
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 750 MHz CATV Conventional Hybrid Amplifier MHW7142 Designed specifically for 750 MHz CATV applications. Features ion-im planted arsenic emitter transistors with an all gold metallization system. • • •
|
OCR Scan
|
PDF
|
MHW7142
110-C
MHW7142
24Vdc,
110nF
SO110
|
airtronic capacitor
Abstract: airtronic air-tronic 470-860 mhz Power amplifier w xg transistor 470-860 mhz Power amplifier 5 w linear amplifier 470-860
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Pow er Transistor Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.
|
OCR Scan
|
PDF
|
TPVS98
airtronic capacitor
airtronic
air-tronic
470-860 mhz Power amplifier w
xg transistor
470-860 mhz Power amplifier 5 w
linear amplifier 470-860
|
470-860 mhz Power amplifier w
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV597 . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.
|
OCR Scan
|
PDF
|
TPV597
TPV597
470-860 mhz Power amplifier w
|
regulator 7805
Abstract: voltage regulator 7805 Transistor t3 smd motorola 7805 smd REGULATOR motorola IC 7805 motorola 7805 7805 regulator smd REGULATOR IC 7805 SMD motorola diode smd 7805 motorola
Text: MOTOROLA SC XSTRS/R F 4bE D • b3b7254 GD^Slfl? ? ■ MOTb T '^ - O S MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP300^ The RF Line U H F P o w e r T ra n sisto r The TP3004 is designed for 900 M Hz bases stations in both analog and digital applica tions. It incorporates high value emitter ballast resistors, gold metallizations and offers a
|
OCR Scan
|
PDF
|
b3b7254
TP3004
TP300^
TP3004
T-33-05
regulator 7805
voltage regulator 7805
Transistor t3 smd motorola
7805 smd
REGULATOR motorola IC 7805
motorola 7805
7805 regulator smd
REGULATOR IC 7805 SMD
motorola diode smd
7805 motorola
|
SMD Transistor z6
Abstract: RF NPN POWER TRANSISTOR C 10-50 GHZ smd ct3 transistor b 745
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Pow er Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
|
OCR Scan
|
PDF
|
MRF6408
MRF6408
DL110/D)
SMD Transistor z6
RF NPN POWER TRANSISTOR C 10-50 GHZ
smd ct3
transistor b 745
|
VQE 22
Abstract: VQE22 TPV598 air-tronic airtronic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor Designed for 4.0 watt stages in Band V TV transposer am plifiers. Gold m etallized dice and diffused em itter ballast resistors are used to enhance reliability, ruggedness and linearity.
|
OCR Scan
|
PDF
|
1N4148
BD136
TPV598
VQE 22
VQE22
air-tronic
airtronic
|
