2SC2922 SANKEN
Abstract: MJ15024 MJ15025 BDY37A SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max hFE *T on ON) Min (Hz) 140 140 140 140 140 140 145 150 160 160 200 200 200 200 250 250 200 250 125 125 15 15 15 15 15 15 15 15 80 80 125 15 Max k)N Max (A) (8)
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MJ3773
2N5631
2N6031
BDY37A
TRW6259
2N6259
MJE4343
2SC2922 SANKEN
MJ15024 MJ15025
SDT604
sanken 2sc2922
sanken 2sa1216
STX10
2SA1117
SDT60
MRF492A
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MHPM6B10A60D1
Abstract: MHPM6B10A60D Dimensioning Inverter
Text: MOTOROLA Order this document by MHPM6B10A60D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B10A60D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT
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MHPM6B10A60D/D
MHPM6B10A60D
MHPM6B10A60D/D*
MHPM6B10A60D1
MHPM6B10A60D
Dimensioning Inverter
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MHPM6B10A120D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHPM6B10A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B10A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT
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MHPM6B10A120D/D
MHPM6B10A120D
2500re
MHPM6B10A120D/D*
MHPM6B10A120D
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motorola e6 SCHEMATIC
Abstract: MHPM6B15A120D
Text: MOTOROLA Order this document by MHPM6B15A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B15A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT
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MHPM6B15A120D/D
MHPM6B15A120D
2500re
MHPM6B15A120D/D*
motorola e6 SCHEMATIC
MHPM6B15A120D
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200 amp 120 V igbt
Abstract: MHPM6B20A60D
Text: MOTOROLA Order this document by MHPM6B20A60D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B20A60D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT
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MHPM6B20A60D/D
MHPM6B20A60D
MHPM6B20A60D/D*
200 amp 120 V igbt
MHPM6B20A60D
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AN1403
Abstract: NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX
Text: AN1403 Application Note I/O FACT Model Kit Prepared by Willard Tu FACT Applications Engineering This application note provides the SPICE information necessary to allow the customer to perform system level interconnect modelling for the Motorola FACT logic
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AN1403
AN1403/D
BR1333
AN1403
NMOS MODEL PARAMETERS SPICE
PMOS MODEL PARAMETERS SPICE
mj04
74ACxxx
74ACTXXX
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ESM2040DV
Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50
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D66ES7
2SC3054
D64DS7
D64DS7T
D64ES7T
GE10009
ETG36-040C
ETG36-040D
PTC6072
PTC6063
ESM2040DV
ESM2
ESM2040D
ke92
KE924503
m*11014
2SD644
SD6062
esm749a
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MFQ5460P
Abstract: 2N5460 DS46
Text: MFQ5460P o QUAD DUAL-IN-LINE P-CHANNEL JUNCTION FIELD-EFFECTTRANSISTORS . . . depletion mode Type A junction field-effect transistors signed for use in general-purpose amplifier applications. . de- High Gate-Source Breakdown Voltage — V(BR)GSS = 40 Vdc (Min)
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MFQ5460P
2N5460
MFQ5460P
2N5460
DS46
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f2c02 motorola
Abstract: f2c02 AN569 MMDF2C02E MMDF2C02ER2 SMD310
Text: MOTOROLA Order this document by MMDF2C02E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF2C02E Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface
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MMDF2C02E/D
MMDF2C02E
MMDF2C02E/D*
TransistorMMDF2C02E/D
f2c02 motorola
f2c02
AN569
MMDF2C02E
MMDF2C02ER2
SMD310
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AN569
Abstract: MMDF4C03HD MMDF4C03HDR2 SMD310
Text: MOTOROLA Order this document by MMDF4C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.
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MMDF4C03HD/D
AN569
MMDF4C03HD
MMDF4C03HDR2
SMD310
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d2c03
Abstract: AN569 MMDF2C03HD MMDF2C03HDR2 SMD310 mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MMDF2C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF2C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs
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MMDF2C03HD/D
MMDF2C03HD
MMDF2C03HD/D*
d2c03
AN569
MMDF2C03HD
MMDF2C03HDR2
SMD310
mosfet transistor 400 volts.100 amperes
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PDF
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AN569
Abstract: MMDF3C03HD MMDF3C03HDR2 SMD310
Text: MOTOROLA Order this document by MMDF3C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF3C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.
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MMDF3C03HD/D
MMDF3C03HD
AN569
MMDF3C03HD
MMDF3C03HDR2
SMD310
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AN569
Abstract: D2C02 MMDF2C02HD MMDF2C02HDR2 SMD310
Text: MOTOROLA Order this document by MMDF2C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF2C02HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs
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MMDF2C02HD/D
MMDF2C02HD
MMDF2C02HD/D*
AN569
D2C02
MMDF2C02HD
MMDF2C02HDR2
SMD310
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JE4353
Abstract: 2U 34 mje4343 motorola MJE4340
Text: MOTOROLA SC 12E XS TRS/R F 0 § MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 0005355 7 | NPN PNP MJE4340 MJE4341 MJE4342 MJE4343 MJË4350 MJE4351 MJE4352 MJE4353 T - 33-13 T ^ 31 -1 3 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE4340
MJE4341
MJE4342
MJE4343
MJE4351
MJE4352
MJE4353
JE4353
2U 34
mje4343 motorola
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MJ15011
Abstract: 92 0151 MJ15012 XSTR
Text: MOTOROLA SC 6367254 iXSTRS/R DË”|t.3t.75SM D G f l l l l h F> MOTOROLA S C XSTRS/R F 9 6 D '8 U 16 D T - 3 3 -IS N P U MOTOROLA MJ15011 SEMICONDUCTOR PNP TECHNICAL DATA MJ 15012 A d v a n c e In fo r m a tio n 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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MJ15011
MJ15012_
MJ15011
MJ15012
100Vdc,
----B0N01NG
92 0151
XSTR
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2N6034-2N6039
Abstract: buc ku 1N5825 369A-13 MJD6036 MJD6039 MSD6100 transistor 228 npn motorola
Text: MOTOROLA Order this document by MJ D6036/D SEMICONDUCTOR TECHNICAL DATA NPN M JD 6036 Com plem entary Darlington Power Transistors PNP M JD 6039 DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages
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D6036/D
2N6034-2N6039
MJD6036/D
MJD6036/D
buc ku
1N5825
369A-13
MJD6036
MJD6039
MSD6100
transistor 228 npn motorola
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transistor mj 3055
Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •
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D2955/D
MJE2955
MJE3055
transistor mj 3055
d2955
transistor Amp 3055
Motorola transistors MJE3055 TO 127
mje3055 127 case data
Motorola transistors MJE3055
Motorola transistors MJE2955
transistor 30 j 127
L 3055 motorola
mje2955 data
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PDF
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Scans-053
Abstract: No abstract text available
Text: Order this document by MRFIC0930/D MJ MOTOROLA — . M RFIC0930 Advance Information 900 MHz GaAs Low Noise Am plifier w ith Gain Control Designed primarily for use in 900 MHz wireless communication systems such as GSM, AMPS, and Industrial, Scientific, and Medical (ISM band
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MRFIC0930/D
RFIC0930
MRFIC0930
Scans-053
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7MC-81282
Abstract: 7MC81282 3361C 7MC8128
Text: Mj MOTOROLA MC3361C Low Power Narrowband FM IF The M C 3361C includes an O scillator, M ixer, Lim iting A m plifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute S w itch. T his d e v ic e is d e s ig n e d fo r use in FM dual c o n ve rsio n
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MC3361C
3361C
MC3361C
CFU455D2
7MC-81282
7MC81282
7MC8128
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Untitled
Abstract: No abstract text available
Text: Orc er ' Y s c’a 'a s'ioe* MOTOROLA i bocíí.': SEMICONDUCTOR TECHNICAL DATA MJ E 18002 M JF18002 Designer’s Data Sheet SWITCHMODE™ M otorola Preferred D e v ice s NPN B ipolar Pow er Transistor For S w itching Pow er Supply A pplications The MJE/MJF18002 have an applications specific state-of-the-art die designed for use
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MJE/MJF18002
O-220
O-220
MJF18002,
21A-06
O-220AB
221D-01
221D-02.
MJF18002
221D-02
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PDF
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MJH16032
Abstract: MJE16032 MJH16034 P6302 circuit 7403 u3 AM503 MJE16034 mje16
Text: MQTORCLA SC XSTRS/R F 12E 0 § b3fc,7SS4 000542=1 T | T -3 S -I3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16032 MJ E 16034 MJH16032 MJH16034 Designer's Data Sheet IMPIM Silicon Power Transistors Switchmode III Series T h e se tra n s is to rs are d esig n e d fo r h ig h -vo ltag e, hig h -sp eed , p o w e r s w itc h in g in in d u c
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OCR Scan
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221a-04
tq-220ab)
O-218AC
MJH16032
MJE16032
MJH16034
P6302
circuit 7403 u3
AM503
MJE16034
mje16
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PDF
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J14002
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high-power amplifier and switching circuit applications, • • • High Current Capability — lc Continuous = 60 Amperes
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MJ14002*
MJ14001
MJ14003*
MJ14002
MJ14003
10tol00
J14002
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PDF
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transistor MJ 15024
Abstract: MOTOROLA MJ15024 mj16022 15024 MJ15022 MJ15024 Motorola MJ15022 J15024
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA HDH MJ15022 MJ15024* Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • • ‘Motorola P r t f f r»d Dtvtoo
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MJ15022
MJ15024
MJ15024*
J15022M
J15024
transistor MJ 15024
MOTOROLA MJ15024
mj16022
15024
Motorola MJ15022
J15024
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MOTOROLA MJ15023
Abstract: TRANSISTOR 3611 MOTOROLA POWER TRANSISTOR rev 6 mj15025 motorola mj 15025 mj16025 MJ15025
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M J15023 M J15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • • ‘ M otorola Preferred D«v c«
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MJ15023
MJ15025
J15023
J15025*
O-204AA
MJ15023MJ1S025
MOTOROLA MJ15023
TRANSISTOR 3611
MOTOROLA POWER TRANSISTOR rev 6
mj15025 motorola
mj 15025
mj16025
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