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    MOTOROLA N-CHANNEL MOSFET Search Results

    MOTOROLA N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGSF3442X

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442V Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =58mΩ (TYP)


    Original     		PDF MGSF3442V MGSF3442X

    greenline portfolio

    Abstract: MGSF3442X
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442X Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =58mΩ (TYP)


    Original     		PDF MGSF3442X greenline portfolio MGSF3442X

    MGSF3454V

    Abstract: MGSF3454VT1 MGSF3454VT3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3454V Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =50mΩ (TYP)


    Original     		PDF MGSF3454V MGSF3454V MGSF3454VT1 MGSF3454VT3

    MMBF0201N

    Abstract: MMBF0201NLT1 MMBF0201NLT3 marking N1
    Text: MOTOROLA Order this document by MMBF0201N/D SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors MMBF0201N Motorola Preferred Device N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 1.0 OHM These miniature surface mount MOSFETs utilize Motorola’s High


    Original     		PDF MMBF0201N/D MMBF0201N MMBF0201N/D* MMBF0201N MMBF0201NLT1 MMBF0201NLT3 marking N1

    MMBF0201NLT1

    Abstract: MMBF0201NLT3 marking N1
    Text: MOTOROLA Order this document by MMBF0201NLT1/D SEMICONDUCTOR TECHNICAL DATA  MMBF0201NLT1 Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Motorola Preferred Device N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 1.0 OHM


    Original     		PDF MMBF0201NLT1/D MMBF0201NLT1 MMBF0201NLT1 MMBF0201NLT3 marking N1

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE


    Original     		PDF MGSF1N02LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    J1 TRANSISTOR DIODE SOT-23 PACKAGE

    Abstract: SOT 23 MOSFET MARKING B9 sot-23 BSS138LT1 SOT-23 MOSFET
    Text: MOTOROLA Order this document by BSS138LT1/D SEMICONDUCTOR TECHNICAL DATA { ? » ] . l i n e Green W BSS138LT1 Motorola Preferred Device Unreleased Data Sheet N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N-CHANNEL LOGIC LEVEL TMOS FET


    OCR Scan     		PDF BSS138LT1/D BSS138LT1 OT-23 J1 TRANSISTOR DIODE SOT-23 PACKAGE SOT 23 MOSFET MARKING B9 sot-23 BSS138LT1 SOT-23 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBF0201N/D SEMICONDUCTOR TECHNICAL DATA Low rDS on Sm all-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors M M B F0 2 0 1 N Motorola Preferred Device N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rDS(on) = 1 0 OHM These miniature surface mount MOSFETs utilize Motorola’s High


    OCR Scan     		PDF MMBF0201N/D OT-23 HX34343F-0

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBF0201NLT1/D SEMICONDUCTOR TECHNICAL DATA •W; L G r e e n i n e MMBF0201NLT1 Low rDS on Sm all-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Motorola Preferred Device N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET


    OCR Scan     		PDF MMBF0201NLT1/D MMBF0201NLT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G r e e n L i n e Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy-con­ serving traits. MMBF0201NLT1 Motorola Preferred Device N-CHANNEL


    OCR Scan     		PDF OT-23 MMBF0201NLT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G r e e n L i n e ' M G SF3454XT1 Prelim inary inform ation Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rDS(on) = 50 mi 2 (TYP)


    OCR Scan     		PDF SF3454XT1 MGSF3454XT1

    D45 SOT23

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G r e e L n i n e MGSF1N03LT1 Motorola Preferred Device Low rDS on Sm all-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part of the GreenLine Portfolio of devices with energyconserving traits.


    OCR Scan     		PDF MGSF1N03LT1 D45 SOT23

    mosfet ghz

    Abstract: mrf182
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF182 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect TVansistors 30 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device


    OCR Scan     		PDF MRF182 MRF182 mosfet ghz

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Line Green M G S F3442XT1 Prelim inary Inform ation Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rDS(on) = 58 m fi (TYP)


    OCR Scan     		PDF F3442XT1

    OJ31

    Abstract: P45 6 pin sot diodes
    Text: MOTOROLA Order this document by MGSF1N02LT1/D SEMICONDUCTOR TECHNICAL DATA G L r e e n i n e MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFEIfe TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part of the GreenLine Portfolio of devices with energyconserving traits.


    OCR Scan     		PDF MGSF1N02LT1/D MGSF1N02LT1 OJ31 P45 6 pin sot diodes

    marking n3

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G I N E R E E MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part o f the G reenLine Portfolio of devices with e n e rg y conserving traits.


    OCR Scan     		PDF MGSF1N03LT1 marking n3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G r e e L n i n e BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SO T-23 MOSFET N-CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc-dc converters, power management in portable and battery-pow ered products such as computers,


    OCR Scan     		PDF BSS138LT1 OT-23 O-236A)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGSF1N02LT1/D SEMICONDUCTOR TECHNICAL DATA G R E E I N E MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part of the GreenLine Portfolio of devices with energyconserving traits.


    OCR Scan     		PDF MGSF1N02LT1/D MGSF1N02LT1

    73LA

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGSF1N03LT1/D SEMICONDUCTOR TECHNICAL DATA G r e e n L i n e MGSF1N03LT1 Motorola Preferred Device Low rDS on Sm all-Signal MOSFElfe TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part of the GreenLine Portfolio of devices with energyconserving traits.


    OCR Scan     		PDF MGSF1N03LT1/D MGSF1N03LT1 3-14-2Tatsum 73LA

    SU 179 transistor

    Abstract: s227
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen­


    OCR Scan     		PDF MRF5035 MRF5035 AN215A, MRF5035. AN721, RF5035 SU 179 transistor s227

    BSS84

    Abstract: MOSFET P-Channel sot-23
    Text: MOTOROLA Order this document by BSS84/D SEMICONDUCTOR TECHNICAL DATA G r e e n L i n e BSS84 Motorola Preferred Device Low rDS on Sm all-S ignal MOSFETs TMOS Single P-Channel Field Effect Transistors ~M r W TMOS ’ P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET


    OCR Scan     		PDF BSS84/D OT-23 O-236AB) BSS84 MOSFET P-Channel sot-23

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G r e e n VT7 L i n e ' M G SF3455VT1 Prelim inary Inform ation Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rDS(on) = 80 m ii (TYP)


    OCR Scan     		PDF SF3455VT1 0E-04 0E-03 0E-02

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Green L i n e ' MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Sm all-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rDS(on) = 78 m il (TYP)


    OCR Scan     		PDF MGSF3441XT1 0GT3b24

    4C6 toroid

    Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET


    OCR Scan     		PDF b3b72SH TP1940 20Bias 4C6 toroid UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125