100MAdc
Abstract: motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener
Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low–current, high speed switching applications. 4 AMPERE POWER TRANSISTOR
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BD791/D
BD791
BD791T
O-225
\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000817\08162000
3\ONSM\08032000
100MAdc
motorola bipolar transistor GUIDE
40250 Transistor
Catalog Bipolar Transistor
40250 power transistor
motorola 239 zener
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BD791
Abstract: MBR340 MSD6100
Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low–current, high speed switching applications. 4 AMPERE POWER TRANSISTOR
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BD791/D
BD791
BD791
MBR340
MSD6100
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Untitled
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F 1500 The RF Line M icrowave Pulse Power Transistor Motorola Preferred Device Designed for 1025-1150 MHz pulse common base amplifier applications such as DME. • 500 W PEAK . 1025-1150 MHz MICROWAVE POWER TRANSISTOR
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MRF1500
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MRF227
Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G
Text: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica
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b3b72S4
MRF227
T0-206A
O-391
MRF227
MRF227 equivalent
420 NPN Silicon RF Transistor
transistor 7905
J 420 G
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2N4233
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 12E D | b3t.7B5M 000450^ 3 | 7^33- MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2N4233A MEDIUM-POWER SILICON TRANSISTOR . . . designed for general-purpose pow er amplifier and switching applications, 5.0 AMPERE SILICON POWER TRANSISTOR
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2N4233A
2N4233
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2N5037
Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi
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BD808
BD810*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N5037
2SC1903
2SC2159
mje15033 replacement
bd7782
MJE2050
SDT7605
2SA835
BD279
svt6251
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N5882/D SEMICONDUCTOR TECHNICAL DATA 2N5882 Silicon NPN High-Power Transistor Motorola Preferred Device . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage —
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2N5882/D
2N5882
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2n5882 motorola
Abstract: 2NS882
Text: MOTOROLA Order this document by 2M5882/D SEM ICONDUCTOR TECHNICAL DATA 2N5882 Silicon NPN High-Power Transistor Motorola Preferred Device . . . designed for general-purpose power amplifier and switching applications. • Collector-Emitter Sustaining Voltage —
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2M5882/D
2N5882/D
2n5882 motorola
2NS882
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TRANSISTOR BD 187
Abstract: TRANSISTOR 187 transistor tl 187 transistor bd 320 c BD189 BD185 BD187 10 watt power transistor bd bD1894 motorola power transistor to-126
Text: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R »TJt.3 t.7 a S 4 96D 8 0 5 6 3 F D BD185 BD187 BD189 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA PLASTIC' M ED IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 10 W att audio amplifiers utilizing
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transistor tl 187
Abstract: BD187 TRANSISTOR 187 TRANSISTOR BD 187 BD185 BD189 TL 187 TRANSISTOR NPN TL 187 TRANSISTOR BE 187 TRANSISTOR BD transistor
Text: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R ßF^t.3ti7as4 96D 8 0 5 6 3 F> D BD185 BD187 BD189 MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA PLASTIC M E D IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 1 0 W att audio amplifiers utilizing
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MOTOROLA TRANSISTOR TO-220
Abstract: 1N5825 221D 2N6107 AN1040 MJF6107 MSD6100
Text: MOTOROLA Order this document by MJF6107/D SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the
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MJF6107/D*
MJF6107/D
MOTOROLA TRANSISTOR TO-220
1N5825
221D
2N6107
AN1040
MJF6107
MSD6100
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJD44E3/D SEMICONDUCTOR TECHNICAL DATA D arlington Pow er Transistor "Motorola Preferred Device DPAK For Surface Mount Application . . . for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers.
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MJD44E3/D
D44E3
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MJE370
Abstract: MJE520 MOTOROLA
Text: MOTOROLA SC X S T R S /R 1SE D I F b3b?254 Ciaa53H7 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER PNP SILICON TRANSISTOR 3 AMPERE POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers and switching circuits. Recommended for use in 5 to 10 W att audio amplifiers uti
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Ciaa53H7
MJE520
MJE370
MJE520 MOTOROLA
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PDF
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transistor 7905
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications
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44E3
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJD44E3/D SEMICONDUCTOR TECHNICAL DATA M JD 44E3* Darlington Power Transistor ‘ Motorola Preferred Device DPAK For Surface Mount Application . . . for general purpose power and switching output or driver stages in applications
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MJD44E3/D
D44E3
69A-13
44E3
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transistor sc 236
Abstract: transistor sc 238
Text: MOTOROLA SC -CXSTRS/R 6367254 F> MOTOROLA "Tb SC CXSTRS/R DE I L.3L.7ES4 96D F 80575 D BD234 BD236 BD238 MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC M ED IU M POWER SILICON PNP TRANSISTOR PNP SILICON . . . designed for use in 5 to 10 Watt audio amplifiers and drivers
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BD234
BD236
BD238
transistor sc 236
transistor sc 238
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PDF
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ADC 808
Abstract: bd 808 BD808 BD810 T1 BD 139
Text: MOTOROLA Order this document by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi
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BD808/D*
BD808/D
ADC 808
bd 808
BD808
BD810
T1 BD 139
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221D
Abstract: AN1040 MJF47 TIP47
Text: MOTOROLA Order this document by MJF47/D SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers
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MJF47/D*
MJF47/D
221D
AN1040
MJF47
TIP47
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j139
Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127
Text: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 | f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD179
BD180
Q0fi4713
O-22SAA
j139
0395 ADC
BD180
3268
127 D TRANSISTOR
H127
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PDF
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transistor BD 522
Abstract: A 798 transistor bd801 Bd798
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor "Motorola Preferred Dtvlo« 8 AMPERE POWER TRANSISTORS NPN 8ILIC0N 100 VOLTS 05 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi
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BD801
BD801
transistor BD 522
A 798 transistor
Bd798
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJF47/D SEMICONDUCTOR TECHNICAL DATA M JF47 High V oltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers
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MJF47/D
TIP47
E69369,
221D-02
O-220
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PDF
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BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD166
BD165
BD166
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BUS48AP
2SC1381
mje15033 replacement
2SA698
BD477
BD139.16
2N307
2SC1224
2SD549
BD139.10
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PDF
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Motorola Power Transistor
Abstract: BD791
Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low-current, high speed switching appti cations. • High Collector-Emitter Sustaining Voltage —
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OCR Scan
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BD791/D
BD791
Motorola Power Transistor
BD791
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PDF
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Transistor D 799
Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.
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BD795
BD797
BD799
BD801
BD797
B0801
BD796
BD801
Transistor D 799
transistor BD 522
transistor motorola 114-8
TRANSISTOR bd 147
motorola s 114-8
transistor BD 800
Transistor K 799
1961 30 TRANSISTOR
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