MOTOROLA POWER TRANSISTOR REV 6 Search Results

MOTOROLA POWER TRANSISTOR REV 6 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA POWER TRANSISTOR REV 6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MC33094DW Abstract: No abstract text available Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control	Original	MC33094 MC33094DW	PDF
ignition coil driver cross reference Abstract: motorola automotive transistor coil ignition ignition coil npn power darlington Triggered spark gap hall effect sensor ignition COIL IGNITION motorola transistor ignition MC33094DWR2 automotive ignition coil MC33094DW Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control	Original	MC33094 ignition coil driver cross reference motorola automotive transistor coil ignition ignition coil npn power darlington Triggered spark gap hall effect sensor ignition COIL IGNITION motorola transistor ignition MC33094DWR2 automotive ignition coil MC33094DW	PDF
automotive transistor coil ignition Abstract: SPARK GAP 350v CR 109 IGNITION MODULE zener diode A 36 motorola automotive transistor coil ignition ignition coil driver cross reference MCZ33094EG Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control	Original	MC33094 automotive transistor coil ignition SPARK GAP 350v CR 109 IGNITION MODULE zener diode A 36 motorola automotive transistor coil ignition ignition coil driver cross reference MCZ33094EG	PDF
ADC 808 Abstract: bd 808 BD808 BD810 T1 BD 139 Text: MOTOROLA Order this document by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi	Original	BD808/D* BD808/D ADC 808 bd 808 BD808 BD810 T1 BD 139	PDF
BD165 Abstract: TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data Text: MOTOROLA Order this document by BD165/D SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi	Original	BD165/D* BD165/D BD165 TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data	PDF
BD810 Abstract: BD807 NT 407 F power transistor Text: MOTOROLA Order this document by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi	Original	BD808/D BD808 BD810* BD808/D* BD810 BD807 NT 407 F power transistor	PDF
BU806 MOTOROLA Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127 Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal	Original	BU806/D* BU806/D BU806 MOTOROLA BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127	PDF
2N5758 Abstract: motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760 Text: MOTOROLA Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage	Original	2N5758/D* 2N5758/D 2N5758 motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760	PDF
Motorola ic Abstract: Transistor D 799 BD802 transistor BD 522 MOTOROLA TRANSISTOR 10 watt power transistor bd Text: MOTOROLA Order this document by BD802/D SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi	Original	BD802/D* BD802/D Motorola ic Transistor D 799 BD802 transistor BD 522 MOTOROLA TRANSISTOR 10 watt power transistor bd	PDF
bd798 Abstract: BD8015 Motorola design of audio amplifier power transistor audio amplifier 500 watts BD801 MOTOROLA TRANSISTOR transistor BD 522 Text: MOTOROLA Order this document by BD801/D SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN Transistor 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi	Original	BD801/D* BD801/D bd798 BD8015 Motorola design of audio amplifier power transistor audio amplifier 500 watts BD801 MOTOROLA TRANSISTOR transistor BD 522	PDF
2n3055 motorola Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,	Original	1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046	PDF
MJ14002 Abstract: MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT Text: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes	Original	MJ14001/D* MJ14001/D MJ14002 MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT	PDF
MR854 diode Abstract: 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854 Text: MOTOROLA Order this document by BUT33/D SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS	Original	BUT33/D* BUT33/D MR854 diode 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854	PDF
transistor BD 522 Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi	OCR Scan	BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810	PDF

motorola transistor 2N6547 Abstract: EM- 546 motor 2n6546 motorola PK 002 bt 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND Text: MOTOROLA O rder this docum ent by 2N6547/D SEMICONDUCTOR TECHNICAL DATA 2N 6547 Designer’s Data Sheet Sw itchm ode Series NPN Silicon Pow er Transistors The 2N6547 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	2N6547/D 2N6547 motorola transistor 2N6547 EM- 546 motor 2n6546 motorola PK 002 bt 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND	PDF
2n6251 application Abstract: No abstract text available Text: MOTOROLA Order this document by 2N6251/D SEMICONDUCTOR TECHNICAL DATA 2N 6251 High V o ltag e NPN Silicon Pow er Transistors . . . designed for high voltage inverters, sw itching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.	OCR Scan	2N6251/D 2n6251 application	PDF
transistor c 3206 Abstract: BD808 transistor BD 139 IC CD 3207 BD807 bd810 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP TVansistor *Motorola Prwtorrtd Devfc« 10 AMPERE POWER TRANSISTORS PNP SILICON 60,80 VOLTS 90 WATTS . . . designed for use ¡n high power audio amplifiers utilizing complementary or quasi	OCR Scan	BD808 BD810* BD810 BD810 ti3b72S4 transistor c 3206 transistor BD 139 IC CD 3207 BD807	PDF
2N6096 Abstract: 2N6055 2N6055 MOTOROLA N6056 2N6056 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6055 2 N6056* Darlington Com plem entary Silicon Power Transistors "Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON 8 AMPERE	OCR Scan	2N6055 2N6056 N6056* 2N6055 2N6056 2N6096 2N6055 MOTOROLA N6056	PDF
2N5631 Abstract: 2N6031 MOTOROLA 2N6031 2N6030 2N5630 2N6031 amplifier 2N5631 MOTOROLA MOTOROLA 2N5631 2n6030 transistor 2NS631 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 5630 H igh-Voltage — High Power Transistors 2N5631 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. 2N 6030 • High Collector Emitter Sustaining Voltage —	OCR Scan	2N5630 2N6030 2N5631, 2N6031 2N5630, 2N5631 2N5631 2N6031 MOTOROLA 2N6031 2N6030 2N6031 amplifier 2N5631 MOTOROLA MOTOROLA 2N5631 2n6030 transistor 2NS631	PDF
2N6388 Abstract: 2N6387 2N63 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 6387 2N 6388* Plastic M edium -Pow er Silicon Transistors "Motorola Prtfnr#d D#v»c . . designed for general-purpose amplifier and low -speed switching applications. DARLINGTON 8 AND 10 A M PE R E NPN SILICON PO W ER T R A N SIST O R S	OCR Scan		PDF
BD810 Abstract: bd808 transistor 808 transistor d 808 200 watts audio power amp transistors Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor "M otorola Preform i D tvlot 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio am plifiers utilizing complementary or quasi	OCR Scan	BD808 BD810* BD810 BD810 transistor 808 transistor d 808 200 watts audio power amp transistors	PDF
2N4923 Abstract: 2N4922 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium -Pow er Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and am plifier applications. These high-performance plastic devices feature: • • Low Saturation Voltage — VcE sat = 0-6 Vdc (Max) @ lc = 1-0 Amp	OCR Scan	2N4918 2N4919 2N4920 2N4923 2N4922	PDF
npn darlington transistor 150 watts Abstract: 2n6038 2N6039 transistor 2n6038 2N6035 2N8030 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N8030 thru 2N6031 8m 2NS630J Plastic Darlington Com plem entary Silicon Power Transistors PNP 2N 6035 . . . designed for general-purpose amplifier and low-speed switching applications. • • • • • High DC Current Gain —	OCR Scan	2N8030 2N6031 2NS630J 2N6035, 2N6038 2N6036, 2N6039 O-225AA 2N603S 2N6036 npn darlington transistor 150 watts 2n6038 transistor 2n6038 2N6035	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Serles NPN Silicon Power Transistor 20 AMPERES NPN SILICON POW ER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications, t • • High DC current gain; hFE mln. - 20 at lc • 6 A	OCR Scan	BUV11 O-204AA	PDF

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MOTOROLA POWER TRANSISTOR REV 6 Search Results

MOTOROLA POWER TRANSISTOR REV 6 Result Highlights (5)

MOTOROLA POWER TRANSISTOR REV 6 Datasheets Context Search

MC33094DW

ignition coil driver cross reference

automotive transistor coil ignition

ADC 808

BD165

BD810

BU806 MOTOROLA

2N5758

Motorola ic

bd798

2n3055 motorola

MJ14002

MR854 diode

transistor BD 522

motorola transistor 2N6547

2n6251 application

transistor c 3206

2N6096

2N5631

2N6388

BD810

2N4923

npn darlington transistor 150 watts

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