MJF18008 equivalent
Abstract: MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210
Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES
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MJE18008/D*
MJE18008/D
MJF18008 equivalent
MJF18008
MPF930
MTP8P10
MUR105
221D
MJE18008
MJE210
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MSB92WT1
Abstract: SMD310
Text: MOTOROLA Order this document by MSB92WT1/D SEMICONDUCTOR TECHNICAL DATA MSB92WT1 Preliminary Information PNP Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier
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MSB92WT1/D
MSB92WT1
SC-70/SOT-323
7-inch/3000
MSB92WT1
SMD310
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vce 1200 and 5 amps npn transistor to 220 pack
Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18004/D SEMICONDUCTOR TECHNICAL DATA Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES
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E69369
MJE18004/D*
MJE18004/D
vce 1200 and 5 amps npn transistor to 220 pack
221D
MJE18004
MJE210
MJF18004
MPF930
MTP8P10
MUR105
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MJE18006
Abstract: 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES
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MJE18006/D*
MJE18006/D
MJE18006
221D
MJE210
MJF18006
MPF930
MTP8P10
MUR105
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MSD42WT1
Abstract: SMD310
Text: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA MSD42WT1 Preliminary Information NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier
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MSD42WT1/D
MSD42WT1
SC-70/SOT-323
7-inch/3000
MSD42WT1
SMD310
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221D
Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES
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MJE18006/D*
MJE18006/D
221D
MJE18006
MJE210
MJF18006
MPF930
MTP8P10
MUR105
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MSB92WT1
Abstract: SMD310 h2d transistor
Text: MOTOROLA Order this document by MSB92WT1/D SEMICONDUCTOR TECHNICAL DATA MSB92WT1 Preliminary Information PNP Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier
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MSB92WT1/D
MSB92WT1
SC-70/SOT-323
7-inch/3000
MSB92WT1
SMD310
h2d transistor
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221D
Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES
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MJE18008/D*
MJE18008/D
221D
MJE18008
MJE210
MJF18008
MPF930
MTP8P10
MUR105
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221D
Abstract: BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10
Text: MOTOROLA Order this document by BUL147/D SEMICONDUCTOR TECHNICAL DATA Data Sheet SWITCHMODE BUL147* BUL147F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS
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BUL147/D
BUL147*
BUL147F*
BUL147/BUL147F
BUL147/D*
221D
BUL147
BUL147F
BUL44
BUL44F
MPF930
MTP8P10
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NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10
Text: MOTOROLA Order this document by BUL147/D SEMICONDUCTOR TECHNICAL DATA Data Sheet SWITCHMODE BUL147* BUL147F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS
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BUL147/D
BUL147*
BUL147F*
BUL147/BUL147F
BUL147/D*
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
221D
BUL147
BUL147F
BUL44
BUL44F
MPF930
MTP8P10
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MJ11016 equivalent
Abstract: ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MC7812 equivalent MJL16218 MOTOROLA POWER TRANSISTOR 2N6191
Text: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES
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MJL16218/D
MJL16218*
MJL16218
MJL16218
MJ11016 equivalent
ferroxcube P3C8
mc7812
MC7812 MOTOROLA
MOTOROLA TRANSISTOR
motorola bipolar transistor
MC7812 equivalent
MOTOROLA POWER TRANSISTOR
2N6191
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100MAdc
Abstract: motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener
Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low–current, high speed switching applications. 4 AMPERE POWER TRANSISTOR
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BD791/D
BD791
BD791T
O-225
\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000817\08162000
3\ONSM\08032000
100MAdc
motorola bipolar transistor GUIDE
40250 Transistor
Catalog Bipolar Transistor
40250 power transistor
motorola 239 zener
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BD791
Abstract: MBR340 MSD6100
Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low–current, high speed switching applications. 4 AMPERE POWER TRANSISTOR
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BD791/D
BD791
BD791
MBR340
MSD6100
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MGW20N120
Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N120/D
MGW20N120
MGW20N120/D*
TransistorMGW20N120/D
MGW20N120
transistor d 1557
305 Power Mosfet MOTOROLA
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marking DF
Abstract: BF721T1
Text: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Symbol Value Unit Collector-Emitter Voltage
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BF721T1/D
BF721T1
BF721T1/D*
marking DF
BF721T1
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MGW20N120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N120/D
MGW20N120
IGBTMGW20N120/D
MGW20N120
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MGY25N120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGY25N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY25N120/D
MGY25N120
MGY25N120
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transistor motorola 236
Abstract: MGY25N120
Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY25N120/D
MGY25N120
MGY25N120/D*
transistor motorola 236
MGY25N120
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motorola 6810
Abstract: MJ 6810 MGY40N60
Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGY40N60/D
MGY40N60
motorola 6810
MJ 6810
MGY40N60
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305 Power Mosfet MOTOROLA
Abstract: Transistor motorola 418 MGW30N60
Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW30N60/D
MGW30N60
MGW30N60/D*
305 Power Mosfet MOTOROLA
Transistor motorola 418
MGW30N60
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MGP20N60
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGP20N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGP20N60/D
MGP20N60
MGP20N60
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MGW20N120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N120/D
MGW20N120
MGW20N120
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motorola 039 31
Abstract: MGW12N120 MGW12N
Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW12N120/D
MGW12N120
motorola 039 31
MGW12N120
MGW12N
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BF721T1
Abstract: SMD310
Text: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Symbol Value Unit Collector-Emitter Voltage
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BF721T1/D
BF721T1
BF721T1
SMD310
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