MPF102 P CHANNEL Search Results

MPF102 P CHANNEL Result Highlights (5)

Part	Manufacturer	Description
TLP294-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16
TLP295-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

MPF102 P CHANNEL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MPF102 Abstract: MPF102 JFET MPF102 Transistor MPF102 circuit application mpf102 equivalent mpf102 Application Note MPF102 y parameters MPF 102 MPF-102 mpf -102 Text: MPF102 Preferred Devices JFET VHF Amplifier N−Channel − Depletion Features • Pb−Free Package is Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Drain −Gate Voltage VDG 25 Vdc Gate−Source Voltage	Original	MPF102 MPF102/D MPF102 MPF102 JFET MPF102 Transistor MPF102 circuit application mpf102 equivalent mpf102 Application Note MPF102 y parameters MPF 102 MPF-102 mpf -102	PDF
MPF102 Abstract: MPF-102 pin out mpf102 Application Note MPF102/D Text: MPF102 Preferred Devices JFET VHF Amplifier N−Channel − Depletion Features • Pb−Free Package is Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Drain −Gate Voltage VDG 25 Vdc Gate−Source Voltage	Original	MPF102 MPF102/D MPF102 MPF-102 pin out mpf102 Application Note MPF102/D	PDF
MPF102 Abstract: MPF102 JFET MPF102 circuit application mpf102 equivalent MPF102 n-channel MPF102 JFET data sheet S22g To226AB Text: ON Semiconductort JFET VHF Amplifier MPF102 N–Channel – Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS –25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C	Original	MPF102 226AA) r14525 MPF102/D MPF102 MPF102 JFET MPF102 circuit application mpf102 equivalent MPF102 n-channel MPF102 JFET data sheet S22g To226AB	PDF
MPF102 Abstract: mpf102 equivalent equivalent to MPF102 Transistors MPF102 circuit application MPF102 Transistor MPF102 JFET MPF-102 mpf102 application note Text: MOTOROLA Order this document by MPF102/D SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc	Original	MPF102/D MPF102 226AA) MPF102 mpf102 equivalent equivalent to MPF102 Transistors MPF102 circuit application MPF102 Transistor MPF102 JFET MPF-102 mpf102 application note	PDF
mpf102 equivalent Abstract: MPF102 MPF102 JFET MPF102 Transistor MPF102 JFET data sheet mpf102 application note MPF102 circuit application MPF102 n-channel transistor mpf102 MPF102-D Text: ON Semiconductort JFET VHF Amplifier MPF102 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS –25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C	Original	MPF102 226AA) r14525 MPF102/D mpf102 equivalent MPF102 MPF102 JFET MPF102 Transistor MPF102 JFET data sheet mpf102 application note MPF102 circuit application MPF102 n-channel transistor mpf102 MPF102-D	PDF
2n3819 field-effect transistors Abstract: MPF102 MMBF-5457 bf245b Text: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457	Original	2N3819 2N5457 2N5458 BF245A BF245B BF256A 2N5460 2N5461 2N5462 O-226AA, 2n3819 field-effect transistors MPF102 MMBF-5457	PDF
MPF102 Abstract: MPF102 Transistor transistor mpf102 Fairchild taping TO-92 MPF102G Text: MPF102 TO-92 G SD N-Channel RF Amplifier This device is designed for electronic switching Applications such as low ON resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings * TA=25 degree C unless otherwise noted Symbol Parameter Value	Original	MPF102 MPF102 MPF102 Transistor transistor mpf102 Fairchild taping TO-92 MPF102G	PDF
MPF102 equivalent transistor Abstract: mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25	Original	MPF102 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF102 equivalent transistor mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note	PDF
2N3797 Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE	PDF
MPF102 equivalent transistor Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or	Original	AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET	PDF
AN211A Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola	PDF
MPF102 JFET Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory	Original	AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet	PDF
BC237 Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1 Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53	Original	1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1	PDF
MPF102 preamp Abstract: capacitor 22n E 13007 SSO20 U4255BM U4256BM U4256BM-NFS U4256BM-NFSG3 Text: U4256BM Frequency Synthesizer for Radio Tuning Description The U4256BM is a synthesizer IC for FM receiver and an AM up-convertion system in BICMOS technology. Together with the AM/FM IC U4255BM, it performs a complete AM/FM car radio front end, which is recommended also for RDS Radio Data System	Original	U4256BM U4256BM U4255BM, 16-bit D-74025 06-Oct-00 MPF102 preamp capacitor 22n E 13007 SSO20 U4255BM U4256BM-NFS U4256BM-NFSG3	PDF

mpf102 Abstract: equivalent to MPF102 Transistors mpf102 equivalent MPF102 y parameters Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T VHF Amplifier N-Channel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VdS 25 Vdc VDG 25 Vdc VGS -2 5 Vdc 'g 10 mAdc Pd 350 2.8 mW mW/°C Tj 125 °C Tstg - 6 5 to +150 °c D rain -S ou rce Voltage	OCR Scan	100cC) mpf102 equivalent to MPF102 Transistors mpf102 equivalent MPF102 y parameters	PDF
mpf102 Abstract: mpf102 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N-Channel — Depletion MAXIMUM RATINGS Symbol Value VDS 25 Vdc Drain-Gate Voltage Vd G 25 Vdc Gate-Source Voltage Rating Drain-Source Voltage Unit vgs -2 5 Vdc Gate Current 'g 10 mAdc Total Device Dissipation @ Ta = 25°C	OCR Scan	O-226AA) MPF102 b3b7255 mpf102 mpf102 equivalent	PDF
mpf102 equivalent Abstract: MPF102 JFET MPF102 y parameters 2N4416-16A equivalent mpf102 U1994 2N5668-70 MPF112 2N4416-16A 2N5555 Text: NH n-channel JFET GATE ALSO BACKSIDE CONTACT H d e s ig n e d fo r . . . S ilic o n ix • V H F /U H F Amplifier* BENEFITS: • Oscillators • Low Noise NF - 3 dB Typical @ 400 MHz • Wideband High fffj/Cjss Ratio ■ Mixers ■ Low Input Capacitance High Speed	OCR Scan	2N3966, 2N4416-16A 2NS484-6, 2N5555, 2N5668-70, MPF102, MPF108, MPF112, PN4416, J304-5, mpf102 equivalent MPF102 JFET MPF102 y parameters 2N4416-16A equivalent mpf102 U1994 2N5668-70 MPF112 2N4416-16A 2N5555	PDF
L129 Abstract: No abstract text available Text: MPF102 SILICO N Silicon N-channel junction field-effect transistor designed for VHF amplifier and m ixer applications. M A X IM U M R A T IN G S lA = 2 S C unlM S o t h e r « * ! n o t« i> Symbol Value Unit Draln-Source Voltage VDS 25 Vdc Draln-Gate Voltage	OCR Scan		PDF
mpf102 equivalent Abstract: U1994 MPF*112 MPF112 K1837-18 2N5668-70 2N5555 equivalent siliconix MPF108 2NS484-6 Text: S Siliconix • VH F/U H F A m plifiers ■ Oscillators ■ M ixers J305 P erform ance Curves N H See Section 5 J304 n-channel JFETs designed fo r . B EN EFITS • Characterized for Operation at 100 and 400 MHz • Low Noise NF = 1.7 dB Typical at 100 MHz	OCR Scan	Vqs-16 mpf102 equivalent U1994 MPF*112 MPF112 K1837-18 2N5668-70 2N5555 equivalent siliconix MPF108 2NS484-6	PDF
2N5668 Abstract: mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112 Text: S S ilic o n ix designed for. . . Performance Curves NH See Section 5 • VHF/UHF Am plifiers ■ M ixers ■ Oscillators MPF102 n-channel JFET BENEFITS • Low Cost • Automatic Insertion Package T O -9 2 See Section 7 ABSOLUTE M A X IM U M RATIIMGS 25°C	OCR Scan	Vqs-16 2N5668 mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112	PDF
U1994 Abstract: 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF102 MPF108 MPF112 PN4416 Text: d e s ig n e d fo r . S ili c o n ix IH si?l 2 5 ?ine5 Curv8S K . . • VHF/UHF Amplifiers m K l8 3 7 -18 s n-channel JFET b e n e fits * *pecifiecl for2 °M Hz0peration Mixers ■ Oscillators TO-92 See Section 7 AB SO LUTE M A X IM U M R A TIN G S 25°C	OCR Scan	Vqs-16 U1994 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF102 MPF108 MPF112 PN4416	PDF
U1994 Abstract: mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112 Text: MPF108 n-channel JFET d e s ig n e d f o r a S ilic o n ix . . . Performance Curves NH See Section 5 • VHF/UHF A m plifiers B E N E F IT S ■ M ixers • L ow Cost • A u to m a tic Insertion Package ■ Oscillators TO-92 See Section 7 A B S O L U T E M A X IM U M R A T IN G S 25°C	OCR Scan	Vqs-16 U1994 mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112	PDF
TP6449 Abstract: MPF106 J300C MPF105 Text: -“ sPRAGÏÏË/SEniCOND GR OU P 8 5 14 0 1 9 SPRAGUE, ^3 J> Ô513Ô5G m S E M I C O N D S / ICS D003b0E 3> 93D 03602 7 ô • = 2 ^ - 2 5 " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C V g s [0 1	OCR Scan	D003b0E O-226AA/STYLES TP6449 MPF106 J300C MPF105	PDF
MPF103 Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952 Text: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5	OCR Scan	TP5951 TP5952 TP5953 TP6449 MPF103 J300B J112A MPF104 MPF105 BF244A BF246A NJ32	PDF

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MPF102 P CHANNEL Search Results

MPF102 P CHANNEL Result Highlights (5)

MPF102 P CHANNEL Datasheets Context Search

MPF102

MPF102

MPF102

MPF102

mpf102 equivalent

2n3819 field-effect transistors

MPF102

MPF102 equivalent transistor

2N3797

MPF102 equivalent transistor

AN211A

MPF102 JFET

BC237

MPF102 preamp

mpf102

mpf102

mpf102 equivalent

L129

mpf102 equivalent

2N5668

U1994

U1994

TP6449

MPF103