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    MPF102 TRANSISTOR Search Results

    MPF102 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MPF102 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPF102

    Abstract: mpf102 equivalent equivalent to MPF102 Transistors MPF102 circuit application MPF102 Transistor MPF102 JFET MPF-102 mpf102 application note
    Text: MOTOROLA Order this document by MPF102/D SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc


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    PDF MPF102/D MPF102 226AA) MPF102 mpf102 equivalent equivalent to MPF102 Transistors MPF102 circuit application MPF102 Transistor MPF102 JFET MPF-102 mpf102 application note

    MPF102

    Abstract: MPF102 Transistor transistor mpf102 Fairchild taping TO-92 MPF102G
    Text: MPF102 TO-92 G SD N-Channel RF Amplifier This device is designed for electronic switching Applications such as low ON resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings * TA=25 degree C unless otherwise noted Symbol Parameter Value


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    PDF MPF102 MPF102 MPF102 Transistor transistor mpf102 Fairchild taping TO-92 MPF102G

    MPF102 equivalent transistor

    Abstract: mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25


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    PDF MPF102 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF102 equivalent transistor mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note

    2n3819 field-effect transistors

    Abstract: MPF102 MMBF-5457 bf245b
    Text: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457


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    PDF 2N3819 2N5457 2N5458 BF245A BF245B BF256A 2N5460 2N5461 2N5462 O-226AA, 2n3819 field-effect transistors MPF102 MMBF-5457

    2N3797

    Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


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    PDF AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE

    MPF102 equivalent transistor

    Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
    Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or


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    PDF AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET

    AN211A

    Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


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    PDF AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola

    MPF102 JFET

    Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory


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    PDF AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet

    sot-363 702

    Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
    Text: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22


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    PDF MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 sot-363 702 MPS5172 "cross-reference" BC237 BC307 MMVL3700T1

    low noise transistors bc638

    Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
    Text: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22


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    PDF MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 low noise transistors bc638 BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


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    PDF 1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1

    BC327 BC337 noise figure

    Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


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    PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


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    PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    2N2222A mps

    Abstract: fsk modulator MPF102 MC13173 SFH484 Wideband FM Modulator 1N4001 2N2222A MC13156 MC13173FTB
    Text: Order this document by MC13173/D MC13173 The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared LED transmitter. This device was designed to provide communications between portable computers via a half duplex infrared link at data rates up to


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    PDF MC13173/D MC13173 MC13173 MC13173/D* 2N2222A mps fsk modulator MPF102 SFH484 Wideband FM Modulator 1N4001 2N2222A MC13156 MC13173FTB

    pll fsk MODULATOR

    Abstract: FSK modulator and demodulator 2N2222A motorola Wideband FM receiver FSK modulator circuit PLL FSK DEMODULATOR 2N2222A plastic MPF102 fsk modulator iris driver control drive coil
    Text: Order this document by MC13173/D MC13173 Infrared Integrated Transceiver IC The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared LED transmitter. This device was designed to provide communications


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    PDF MC13173/D MC13173 MC13173 MC13173/D* pll fsk MODULATOR FSK modulator and demodulator 2N2222A motorola Wideband FM receiver FSK modulator circuit PLL FSK DEMODULATOR 2N2222A plastic MPF102 fsk modulator iris driver control drive coil

    pll fsk MODULATOR

    Abstract: SFH484-2 SFH206K motorola FM TRANSCEIVER siemens SFH nm mpf 102 k33n mps 2N2222A
    Text: Order this document by MC13173/D MC13173 Infrared Integrated Transceiver IC The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared LED transmitter. This device was designed to provide communications


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    PDF MC13173/D MC13173 MC13173/D* pll fsk MODULATOR SFH484-2 SFH206K motorola FM TRANSCEIVER siemens SFH nm mpf 102 k33n mps 2N2222A

    L129

    Abstract: No abstract text available
    Text: MPF102 SILICO N Silicon N-channel junction field-effect transistor designed for VHF amplifier and m ixer applications. M A X IM U M R A T IN G S l*A = 2 S * C unlM S o t h e r « * ! n o t« i> Symbol Value Unit Draln-Source Voltage VDS 25 Vdc Draln-Gate Voltage


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    mpf102

    Abstract: equivalent to MPF102 Transistors mpf102 equivalent MPF102 y parameters
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T VHF Amplifier N-Channel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VdS 25 Vdc VDG 25 Vdc VGS -2 5 Vdc 'g 10 mAdc Pd 350 2.8 mW mW/°C Tj 125 °C Tstg - 6 5 to +150 °c D rain -S ou rce Voltage


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    PDF 100cC) mpf102 equivalent to MPF102 Transistors mpf102 equivalent MPF102 y parameters

    mpf102

    Abstract: mpf102 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N-Channel — Depletion MAXIMUM RATINGS Symbol Value VDS 25 Vdc Drain-Gate Voltage Vd G 25 Vdc Gate-Source Voltage Rating Drain-Source Voltage Unit vgs -2 5 Vdc Gate Current 'g 10 mAdc Total Device Dissipation @ Ta = 25°C


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    PDF O-226AA) MPF102 b3b7255 mpf102 mpf102 equivalent

    dna100

    Abstract: mpf103 MPF107
    Text: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 SPRA GU E. T3 » • Q50433Ô S E M I C O N D S / ICS D G ü 3 b Q 2 7 ■ ALGR 2> 93D 03602 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH


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    PDF Q50433Ô TP5951 TP5952 TP5953 TP6449 TP6450 TP6451 TP6452 TP6453 TP6454 dna100 mpf103 MPF107

    TP6449

    Abstract: MPF106 J300C MPF105
    Text: -“ sPRAGÏÏË/SEniCOND GR OU P 8 5 14 0 1 9 SPRAGUE, ^3 J> Ô513Ô5G m S E M I C O N D S / ICS D003b0E 3> 93D 03602 7 ô • = 2 ^ - 2 5 " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C V g s [0 1


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    PDF D003b0E O-226AA/STYLES TP6449 MPF106 J300C MPF105

    MPF103

    Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952
    Text: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5


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    PDF TP5951 TP5952 TP5953 TP6449 MPF103 J300B J112A MPF104 MPF105 BF244A BF246A NJ32

    F245B

    Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
    Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten


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    PDF 100-MHz F245B BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet