|
TTC5886A
|
|
Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
|
|
|
MX0912B251Y
|
|
Rochester Electronics LLC
|
MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) |
|
|
|
CA3083Z-G
|
|
Rochester Electronics LLC
|
CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY |
|
|
|
CA3046
|
|
Rochester Electronics LLC
|
RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN |
|
|
|
ADC1038CIWM
|
|
Rochester Electronics LLC
|
ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 |
|
|
