mps2907 replacement
Abstract: BC237 motorola 2n4033 Transistor 2N3019
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2907 MPS2907A* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol MPS2907 MPS2907A Unit Collector – Emitter Voltage VCEO –40 –60 Vdc
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MPS2907
MPS2907A*
MPS2907
MPS2907A
226AA)
Therma218A
MSC1621T1
MSC2404
MSD1819A
MV1620
mps2907 replacement
BC237
motorola 2n4033
Transistor 2N3019
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MPS2907A
Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A EQUIVALENT
Text: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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Original
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MPS2907A
O-226AA
OT-23
MMBT2907A.
20K/box
18-Jul-08
MPS2907A
EQUIVALENT MPS2907A
MMBT2907A
MPS2907A EQUIVALENT
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PDF
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MPS2907A EQUIVALENT
Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A
Text: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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Original
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MPS2907A
O-226AA
OT-23
MMBT2907A.
20K/box
150mA,
10-May-02
200ns
MPS2907A EQUIVALENT
EQUIVALENT MPS2907A
MMBT2907A
MPS2907A
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PDF
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Untitled
Abstract: No abstract text available
Text: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.
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Original
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MPS2907A
O-226AA
OT-23
MMBT2907A.
20K/box
20K/box
08-Apr-05
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PDF
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EQUIVALENT MPS2907A
Abstract: MPS2907A EQUIVALENT MMBT2907A MPS2907A
Text: PRELIMINARY PRELIMINARY PRELIMINARY MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also
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Original
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MPS2907A
OT-23
MMBT2907A.
200ns
EQUIVALENT MPS2907A
MPS2907A EQUIVALENT
MMBT2907A
MPS2907A
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PDF
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MPS2907A EQUIVALENT
Abstract: MPS2907A
Text: MPS2907A Small Signal Transistor PNP TO-226AA (TO-92) New 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ct u d Pro Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • On special request, this transistor is also
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Original
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MPS2907A
O-226AA
OT-23
MMBT2907A.
200ns
MPS2907A EQUIVALENT
MPS2907A
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PDF
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MPS2907A EQUIVALENT
Abstract: EQUIVALENT MPS2907A
Text: NEW PRODUCT NEW PRODUCT MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also
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Original
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MPS2907A
OT-23
MMBT2907A.
Collector-Emitt15
200ns
MPS2907A EQUIVALENT
EQUIVALENT MPS2907A
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2n1613 equivalent
Abstract: BC237 diode l 0607
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
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Original
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SC-70/SOT-323
BAV99WT1
BAV99LT1.
BAV99RWT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2n1613 equivalent
BC237
diode l 0607
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PDF
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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PDF
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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Original
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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Original
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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PDF
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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Original
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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PDF
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BC237
Abstract: 2n2904 2n2905
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc
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Original
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MPSW55
MPSW56*
MPSW55
MPSW56
226AE)
Ther218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
2n2904 2n2905
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
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Original
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MMBD352WT1
MMBD352WT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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PDF
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MPS2907A EQUIVALENT
Abstract: EQUIVALENT MPS2907A MPS2222
Text: TOSHIBA MPS2907A Transistor Silicon PNP Epitaxial Type For High-Speed Switching Use DC To VHF Amplifier Features • High DC Current Gain Specified - -0.1 - -500mA • High Transition Frequency - @ lc = -50mA, fT = 200MHz Min. • Low Coiiector-Emitter Saturation Voltage
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OCR Scan
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MPS2907A
-500mA
-50mA,
200MHz
-500mA,
MPS2222
100kHz
100kHz
150PPB
MPS2907A EQUIVALENT
EQUIVALENT MPS2907A
MPS2222
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PDF
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Untitled
Abstract: No abstract text available
Text: NEW PRO DUCT NEW PRO DUCT MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.181 (4.6) 0 .1 4 2 (3.6) 1 ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also manufactured in the pin configuration
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OCR Scan
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MPS2907A
OT-23
MMBT2907A.
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PDF
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MPS2907A EQUIVALENT
Abstract: No abstract text available
Text: SAM SU NG SEMI CON DUCTOR INC IME D MPS2907A | T^IMS 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRA N SISTO R • Collector-Emltter Voltage: V « o = 6 0 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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OCR Scan
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MPS2907A
T-29-21
PS2907
MPS2907A EQUIVALENT
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PDF
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transistor NEC D 882 p
Abstract: B5G1 045H5 marking BSs sot-23 nec d 882 p nec d 882 p datasheet TL 188 TRANSISTOR PIN DIAGRAM transistor NEC D 882 p 6V transistor tl 187 LP2980
Text: LP2980 National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixecf-output voltage regulator de signed specifically to meet the requirements of battery-pow ered applications.
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OCR Scan
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LP2980
LP2980
OT-23
O-220
TL/H/12078-54
bS011S4
transistor NEC D 882 p
B5G1
045H5
marking BSs sot-23
nec d 882 p
nec d 882 p datasheet
TL 188 TRANSISTOR PIN DIAGRAM
transistor NEC D 882 p 6V
transistor tl 187
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PDF
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LP2980-5
Abstract: 045H5 1E475ZY5U-C304 L01A LP29801 LP29801m5 LA 7123 L01B SIEMENS capacitor tantalum GG67
Text: LP2980 National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator de signed specifically to meet the requirements of battery-pow ered applications.
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OCR Scan
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LP2980
LP2980
OT-23
T0-220
bS01122
LP2980-5
045H5
1E475ZY5U-C304
L01A
LP29801
LP29801m5
LA 7123
L01B
SIEMENS capacitor tantalum
GG67
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PDF
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MPS2222A
Abstract: No abstract text available
Text: 3 TOSHIBA TRANSISTOR . MPS2222A SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO 5i1 MAX VHF FREQUENCY APPLICATION. FEATURES: . DC Current Gain Specified : 0.1~500mA . Low Collector-Emitter Saturation Voltage
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OCR Scan
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MPS2222A
500mA
300MHz
MPS2907A.
150mA,
500mA,
MPS2222A
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PDF
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