MPS3563 TRANSISTOR Search Results

MPS3563 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MPS3563 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MPS3563 Abstract: MPS918 MPS3563G MPS3563RLRA MPS3563RLRAG MPS918G Marking code mps Text: MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MPS918 MPS3563 Collector −Base Voltage	Original	MPS918, MPS3563 MPS918 MPS918 MPS918/D MPS3563 MPS3563G MPS3563RLRA MPS3563RLRAG MPS918G Marking code mps	PDF
MPS918 Abstract: MPS918 equivalent 3810 to equivalent ic MPS3563 IC 2910 Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage	Original	MPS918* MPS3563 MPS918 226AL) r14525 MPS918/D MPS918 MPS918 equivalent 3810 to equivalent ic MPS3563 IC 2910	PDF
MPS918 Abstract: No abstract text available Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage	Original	MPS918 MPS3563 MPS918* MPS3563 226AL)	PDF
MPS3563 Abstract: No abstract text available Text: MOTOROLA Order this document MPS918/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage	Original	MPS918/D MPS918* MPS3563 MPS918 226AA) MPS918/D* MPS3563	PDF
Untitled Abstract: No abstract text available Text: MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Rating Collector −Emitter Voltage Value VCEO MPS918 MPS3563 Collector −Base Voltage	Original	MPS918, MPS3563 MPS918 MPS918 MPS918/D	PDF
MPS918 equivalent Abstract: BC237 MPS3563 transistor MPS3563 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage VCEO 15 12 Vdc Collector – Base Voltage	Original	MPS918* MPS3563 MPS918 MPS3563 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 MPS918 equivalent BC237 MPS3563 transistor	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector −Emitter Voltage VCEO 15 12 Vdc Collector −Base Voltage VCBO 30 30 Vdc Emitter −Base Voltage	Original	MPS918 MPS3563 MPS918* MPS3563 O-226AL)	PDF
MPS3563 Abstract: mps918 Text: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage	Original	MPS918* MPS3563 MPS918 226AL) r14525 MPS918/D MPS3563 mps918	PDF
MPS918 Abstract: MPS918 equivalent MPS3563 Text: MOTOROLA Order this document MPS918/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage	Original	MPS918/D MPS918* MPS3563 MPS918 226AA) MPS918/D* MPS918 MPS918 equivalent MPS3563	PDF
TO226AA Abstract: 226AA msc2295 P2N2222A MPS3904 Text: Bipolar Transistors RF Transistors NPN PNP V BR CEO IC mA Max Min hFE Max fT MHz Min Cap pF Max CRB = 0.65 CRE = 0.65 MPSH10 − 25 − 60 − 650 BF959 − 20 100 40 − 600 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 − − − − 15 15 12 12 − 50 50 50	Original	MPSH10 BF959 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 MMBTH10-4LT1 MMBT918LT1 BSV52LT1 TO226AA 226AA msc2295 P2N2222A MPS3904	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon •Motorola Preferred Device COLLECTOR 3 2 BASE" 1 EMITTER MAXIMUM RATINGS Symbol MPS918 MPS3563 Unit Col lector-E m itter Voltage Rating VCEO 15 12 Vdc C ollector-B ase Voltage	OCR Scan	MPS918* MPS3563 MPS918 MPS3563	PDF
MPS3563 Abstract: MPS918 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon 'Motorola Preferred Device MAXIMUM RATINGS Rating Unit Symbol MPS918 MPS3563 12 Vdc 30 Vdc v CEO 15 C ollector-Base Voltage VCBO 30 E m itter-B ase Voltage vebo 3.0 C ollector-Em itter Voltage	OCR Scan	MPS918* MPS3563 MPS918 MPS3563	PDF
MPS3563 Abstract: lt 2904 Text: MPS918* MPS3563 MAXIMUM RATINGS Rating 2 Symbol MPS918 MPS3563 Unit C o lle c to r-E m itte r V o lt a g e VCEO 15 12 Vdc C o lle c to r -B a se V o lt a g e VCBO 30 30 Vdc E m itte r-B a se V o lt a g e v EBO 3.0 2.0 Vdc C o lle c to r C u rre n t — C o n t in u o u s	OCR Scan	MPS918* MPS3563 MPS918 T0-226AA) PS918 PS3563 PS918 MPS3563 lt 2904	PDF
MPS6511 Abstract: No abstract text available Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO V EBO (V) (V) (V) PD (W) *c (A) Min Min Min Tc=25°( MPS3563 30 12 2 0.625 0.05 0.05 MPS3646 40 15 5 0.625 0.3 MPS3693	OCR Scan	MPS3563 MPS3646 MPS3693 MPS3694 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS6511 MPS6511	PDF

mps918 Abstract: MPS3563 MPS3663 MPS-3563 Text: MPS918 SILICON MPS3563 NPN SILICON ANNULAR TRANSISTORS NPN SILICON . . . designed fo r V H F/U H F low-level am plifier, and oscillator applications. A M PLIFIER TRANSISTORS • One-Piece, Injection-Molded Plastic Unibloc R eliability • Low C ollector-Em itter Saturation Voltage VcE(sat) = 0-4 Vdc (Maxi @ I q = 10 mAdc	OCR Scan	MPS918 MPS3563 MPS918 MPS3663 PS918 MPS3563 f-140 MPS-3563	PDF
MPS3709 Abstract: MPS3563 MPS3646 MPS3693 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710 Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (V) Min V CEO V ESO (V) Min (V) Min Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) PD *c (W) (A) @Tc=25°c 'cBO ^CB (mA) 0 (V ) Max MPS3563 30 12 2 0.625 0.05 0.05 MPS3646	OCR Scan	MPS3563 MPS3646 MPS3693 NIPS3694 MPS6507 MPS651 MPS6511 MPS6512 MPS6513 MPS6514 MPS3709 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710	PDF
Untitled Abstract: No abstract text available Text: MOT OROL A SC MPS3563 XSTRS/R F 1EE 0 \| b3b?ZS4 □ Oflfe.Gfc.'i 0 \| For Specifications, See MPS918 Data M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage vCEO 30 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage Rating Unit v EBO 5.0	OCR Scan	MPS3563 MPS918	PDF
MPS3563 Abstract: No abstract text available Text: MPS918* MPS3563 M AXIM U M RATINGS Symbol Rating M PS918 M PS3563 Unit Collector-Em itter V oltage v CEO 15 12 V dc C ollector-Base V oltage v CBO 30 30 V dc Em itter-Base V oltage v EBO 3.0 2.0 Vdc Collector Current — C o n tin u o u s 'c 50 m Adc Total Device D issip a tio n a Ty\ = 25<’C	OCR Scan	MPS918* MPS3563 PS918 PS3563 O-226AA) MPS918 PS918 MPS3563	PDF
2N5222 Abstract: 2n3544 2n918 die 2N918 motorola SILICON SMALL-SIGNAL DICE MPSH10 die 2n917 die MPS-65-48 MPS-6539 2N917 Text: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DF\|t.Bb7aS5 ODBTTTS 3 DIODES/OPTO 3^C 37972 D •r-~3/w<r SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C918 DIE NO. — NPN LINE SOURCE — DSL75 & This die provides performance similar to that of the following device types:	OCR Scan	DSL75 2N917 2N918 2N3544* 2N5222 MM1941 MMCM918 MMT918 MPS918 MPS3563 2n3544 2n918 die 2N918 motorola SILICON SMALL-SIGNAL DICE MPSH10 die 2n917 die MPS-65-48 MPS-6539	PDF
SE3001 Abstract: SE-3001 to106 SE5006 2n3564 2N5770 2N3563 2N5130 TO-106 SE3002 Text: TRANSISTORS—SMALL SIGNAL NPN RF—IF AMPLIFIER AND OSCILLATOR TRAN SISTO RS BY A SCEN D IN G FREQUENCY PLASTIC PACKAGE 10.0 25.0 25.0 28.0 28.0 29.0 29.0 30.0 20.0 20.0 @ @ @ @ @ @ @ @ @ @ 14.0 14.0 15.0 15.0 17.0 19.0 20.0 12.0 12.0 15.0 (30.0) (30.0)	OCR Scan	2N5127 PE3100 SE1010 2N3564 PE5025 PE5013 PE5029 PE5030B 2N3688 2N3689 SE3001 SE-3001 to106 SE5006 2N5770 2N3563 2N5130 TO-106 SE3002	PDF
n3904 Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640 Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in	OCR Scan	mpsh17 mpsh10 bf374 bf375 bf959 mps918 n3904 2n3903 2n4400 mps2369 CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640	PDF
MPS6507 Abstract: MPS6511 2N5770 MPS3563 MPS6539 MPS6547 MPS918 PN5130 T092 T092-1 Text: 5048836 K S L M IC R Q D EV îC gS INC _ K S L MICRODEVICES INC 14 14CT 00103 CASE STY LE a v CBO b v CEO BVebo CB0 Min Min Min Max e T DËT\| SDMflñBL t. RF-IF AMPLIFIERS AND O SCILLATO RS TYPE D NPN TRANSISTORS V CB C hFE Min-Max V CE & v CE<sat Max V BE sat)	OCR Scan	MPS918 MPS3563 8mA/10V PN5130 8mA/10V 2N5770 /400il MPS6507 2mA/10V 700MHz MPS6511 MPS6539 MPS6547 T092 T092-1	PDF
Untitled Abstract: No abstract text available Text: AL L E G R O M I C R O S Y S T E M S INC 8514019 SPRAGUE. T3 D • 0SGM33Ô OGOBS^Ü S E M I C O N D S / ICS 4 ■ ALGR 93D 0359.0 D r-a7-ft? _' PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C	OCR Scan	0SGM33Ô MPS2712 MPS2714 MPS2716 MPS2923 MPS2924 MPS2925 MPS2926 MPS3390 MPS3391	PDF
transistor 2N3563 Abstract: 2N3563 2N3564 2n3600 2N915 KM9018 MPS3563 MPS3693 MPS3694 MPS3826 Text: RF-IF High Frequency Transistors MAXIMUM RATINGS HFE VCE sat n IC (mA) VCE (V) max (V) IC (mA) min (MHz) Cob Cre* max (PF) 198 # 200 160 400 1 3 8 10 10 5 1 10 10 10 0.5 0.4 10 10 - - . . - 400 600 600 200 200 1.7 1.7 1.7 3.5 3.5 40 100 25 25 20 160 400 -	OCR Scan	KM9018 O-92A MPS918 MPS3563 MPS3693 MPS3694 transistor 2N3563 2N3563 2N3564 2n3600 2N915 MPS3826	PDF

MPS3563 TRANSISTOR Search Results

MPS3563 TRANSISTOR Result Highlights (5)

MPS3563 TRANSISTOR Datasheets Context Search

MPS3563

MPS918

MPS918

MPS3563

Untitled

MPS918 equivalent

Untitled

MPS3563

MPS918

TO226AA

Untitled

MPS3563

MPS3563

MPS6511

mps918

MPS3709

Untitled

MPS3563

2N5222

SE3001

n3904

MPS6507

Untitled

transistor 2N3563