MPS6523
Abstract: 1N916 MPS6521
Text: MOTOROLA Order this document by MPS6521/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN 2 BASE MPS6521* PNP 1 EMITTER MPS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER
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MPS6521/D
MPS6521
MPS6523
MPS6523
1N916
MPS6521
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MPS6520
Abstract: MPS6520 equivalent AN569 in Motorola Power Applications MPS3905 MPS3906 MPS6521 MPS6523 1N916 MPS3904 motorola an569 thermal
Text: MOTOROLA Order this document by MPS6520/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN 2 BASE MPS6520 MPS6521* 1 EMITTER PNP MPS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER
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Original
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MPS6520/D
MPS6520
MPS6521
MPS6523
MPS6520,
MPS6520
MPS6520 equivalent
AN569 in Motorola Power Applications
MPS3905
MPS3906
MPS6521
MPS6523
1N916
MPS3904
motorola an569 thermal
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PDF
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transistor marking wt
Abstract: motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN MPS6521* PNP MPS6523 2 BASE 1 EMITTER COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage
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Original
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MPS6521*
MPS6523
MPS6521
MPS6523
CAS218A
MSC1621T1
MSC2404
MSD1819A
transistor marking wt
motorola application note AN-569
modes of operation of transistor BC177
BC237
hie for bc547b
2N2222 MPS2222 npn transistor
BC547 collector characteristic curve
2n3819 equivalent transistor
MOTOROLA TRANSISTOR 2N3819
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PDF
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MJE340 MOTOROLA
Abstract: mjl21194 MOC223-M MCR265-006 MC79L12ACP MC79L05ACP mj15003 mje172 analog irf 846 mcr100-6 307
Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor
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MC78T05CT
MJD112
MMBT4401
MOC30ALT1
MOC205-M
MPSW01A
MJ16012
MMBT2907A
MOC207-M
MPSW06
MJE340 MOTOROLA
mjl21194
MOC223-M
MCR265-006
MC79L12ACP
MC79L05ACP
mj15003
mje172 analog
irf 846
mcr100-6 307
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PDF
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MRF472
Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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Original
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BSW43
BSX52
MMBT41ran
MRF472
MRF245
MRF243
MPSA13K
MPS6579
MRF420
BF497
MRF304
MRF250
PE210B
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PDF
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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Original
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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PDF
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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Original
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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Original
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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Original
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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PDF
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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Original
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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PDF
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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PDF
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
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Original
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MMBD352WT1
MMBD352WT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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PDF
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MPS6521
Abstract: MPS6523 MPS6520 mps-6521 mps6521 motorola
Text: MAXIMUM RATINGS Rating Symbol NPN PNP Unit C o lle cto r-E m itte r V o ltage MPS6520, MPS6521 MPS6523 v CEO Collector-Base Voltage MPS6520, MPS6521 MPS6523 VCBO Em itter-Base V o ltage vebo 4.0 Vdc C o lle ctor C u rrent — C o n tin u o u s 'c 100 m A dc
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OCR Scan
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MPS6520,
MPS6521
MPS6523
MPS6520
MPS6521*
MPS6523
O-226AA)
mps-6521
mps6521 motorola
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PDF
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MPS6521 equivalent
Abstract: MPS6523 mps6521 mps6521 motorola mps6521 TRANSISTOR
Text: MOTOROLA Order this document by MPS6521/D SEMICONDUCTOR TECHNICAL DATA A m p lifie r T ra n s is to rs COLLECTOR 3 NPN M P S 6521 * PNP M PS6523 Voltage and current are negative for PNP transistors 'M otorola Preferred Device MAXIMUM RATINGS Rating Symbol
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OCR Scan
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MPS6521/D
PS6523
MPS6521
PS6523
MPS6521 equivalent
MPS6523
mps6521 motorola
mps6521 TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Symbol C o lle c to r -E m itte r V o lta g e NPN PNP M P S 6 5 2 0 , MPS6521 M P S 65 2 3 C o lle c to r-B a s e V o lta g e Unit 25 25 V dc v CB0 40 M P S 65 2 0, M P S 6521 M P S 65 2 3 25 Vebo 4.0 V dc C o lle c to r C u rre n t — C o n tin u o u s
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OCR Scan
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MPS6521
MPS6520
MPS6521*
MPS6523
O-226AA)
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PDF
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MPS6523 equivalent
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier T ran sisto rs COLLECTOR 3 N PN M P S 65 2 1 * PN P 1 EMITTER M PS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors •Motorola Preferred Device 1 EMITTER MAXIM UM RATINGS Rating Symbol C ollector-E m itter Voltage
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OCR Scan
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PS6523
MPS6521
MPS6523
AN-569.
MPS6523 equivalent
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PDF
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2N915
Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:
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OCR Scan
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DMB105
2C3904
2N915
2N916
2N2716*
2N2923
2N2924
2N2925
2N2926*
2N3390*
2N2926
2n2926 transistor
mps3391
2n3710
2n2924 transistor
2N3904 die
2C3904
MPS3394
MPS3392
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PDF
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PS6521
Abstract: MPS6 PS6520
Text: M AXIM UM RATINGS Symbol Rating NPN PNP Unit V CEO C o llector-B ase V o lta g e M P S 652 0, M PS6521 M PS 6 52 3 v CBO Em itter-B ase V o lta g e v EBO 4.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s ic 100 m Adc Total D evice D issip a tio n Cw T^ = 2 5 T
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OCR Scan
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PS6521
MPS6520
MPS6521*
MPS6523
O-226AA)
2N5086
MPS6
PS6520
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PDF
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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OCR Scan
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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PDF
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BC309 equivalent
Abstract: st 393 8-pin T0-226AE
Text: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)
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OCR Scan
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T0-226AE
T0-92)
BDC01D
BC309 equivalent
st 393 8-pin
T0-226AE
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PDF
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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OCR Scan
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ircD376
BD234
VT854,
VT855â
VT854*
iTT44,
BZX79-C24,
BZX83-C24,
BZX88-C24
sx3704
BRC157
BRC-116
Germanium Diode aa143
1n4148 ITT
TRANSISTOR BC147
BC107/spice model bf199
BY238
SN76226DN
tungsram
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PDF
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