MPS8550
Abstract: No abstract text available
Text: MPS8550 C TO-92 BE PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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MPS8550
MPS8550
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MPS8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8050. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V VEBO -6 V Collector Current
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MPS8550
MPS8050.
MPS8050
MPS8550
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8050. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO
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MPS8550
MPS8050.
625mW
400mW
-100mA
-800mA
-800mA,
-80mA
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CBVK741B019
Abstract: F63TNR MPS8550 PN2222N
Text: MPS8550 MPS8550 C B TO-92 E PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPS8550
CBVK741B019
F63TNR
MPS8550
PN2222N
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mps8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8550. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V VEBO 6 V Collector Current
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MPS8050
MPS8550.
mps8050
MPS8550
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mps8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8550. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V H
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MPS8050
MPS8550.
100mA
800mA
800mA,
mps8050
MPS8550
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE 2009. 6. 10 Revision No : 2 1/2
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MPS8550S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B FEATURE C A ・Complementary to MPS8050. N K MAXIMUM RATING Ta=25℃ E G RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage
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MPS8050.
MPS8550
625mW
400mW
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MPS8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8050. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V
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MPS8550
MPS8050.
-100mA
-800mA
-800mA,
-80mA
-10mA
-50mA
MPS8050
MPS8550
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k MPS 8550 D
Abstract: K 8550 MPS 8550 B kmps8550 k MPS 8550 8550B MPS 8550 C MPS 8550 D KEC 8550 DSA0010574
Text: SEMICONDUCTOR MPS8550 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS 8550 B 801 No. 1 Description K KEC 2 KOREA ELECTRONICS CO.,LTD. MPS Series Name 8550 Device Name B,C,D Device Name 3 99.05.20 4 hFE Grade B 5 Lot No.
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MPS8550
k MPS 8550 D
K 8550
MPS 8550 B
kmps8550
k MPS 8550
8550B
MPS 8550 C
MPS 8550 D
KEC 8550
DSA0010574
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MPS8050S
Abstract: MPS8550S
Text: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. E B L Complementary to MPS8550S. L SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V IC 1.5
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MPS8050S
MPS8550S.
MPS8050S
MPS8550S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L D L ・Complementary to MPS8550S. H MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage
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MPS8050S
MPS8550S.
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MPS8550
Abstract: MPS8550c
Text: MPS8550 MPS8550 C B TO-92 E PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPS8550
MPS8550
MPS8550c
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MPS8550
Abstract: No abstract text available
Text: MPS8550 C TO-92 BE PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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MPS8550
tempe15
MPS8550
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MPS8550S
Abstract: MPS8050S
Text: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L L D ・Complementary to MPS8050S. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage
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MPS8550S
MPS8050S.
MPS8550S
MPS8050S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8550. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO
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MPS8050
MPS8550.
625mW
400mW
100mA
800mA
800mA,
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MPS8550
Abstract: pnp general purpose amplifier
Text: N MPS8550 C TO-92 BE PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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MPS8550
MPS8550
pnp general purpose amplifier
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Untitled
Abstract: No abstract text available
Text: B iy C P N D U C T g R n.i MPS8550 PNP General Purpose Amplifier T his device is designed for general purpose audio am plifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Rdtinys T A = 2 5 ° C unless o th e rw ise noted
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MPS8550
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MPS8550
Abstract: MPS8050
Text: SEMICONDUCTOR TECHNICAL DATA MPS8550 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8050. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage VCEO
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MPS8550
MPS8050.
-30-100-300-1K
MPS8550
MPS8050
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Untitled
Abstract: No abstract text available
Text: PNP Transistors National f i seniconäuc, or- V V Device No. Case Style MPS855 CBO V CEO EBO Discrete POWER & Signal Technologies PNP Medium Power 'cB O V V CE SAT V BE(SAT) h FE (V) Min (V) Min (V) Min TO-92 (92) 40 25 6 MPS6562 TO-92 (92) 25 25 5 100 20
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MPS855
MPS6562
PN4356
TN4033A
O-226
TN5322A
MPSA55
MPSA56
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MPS8550
Abstract: I400 E100
Text: Semi conduct or MPS8550 D iscrete P O W E R & S ig n a l Technologies National MPS8550 PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at coilector currents to 500 mA. Sourced from Process 60. Absolute Maximum RstinCJS*
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MPS8550
MPS8550
I400
E100
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Untitled
Abstract: No abstract text available
Text: D iscrete POWER & Signal Technologies 1R O H I 1ILtQI ^ M IC W J C R J C T D P i m MPS8550 C TO-92 BE PNP General Purpose Amplifier T his device is designed for general purpose audio am plifier appli cations at collector currents to 500 mA. Sourced from Process 60.
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MPS8550
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MPS8050
Abstract: MPS8550
Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8550. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Em itter-B ase Voltage
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MPS8050
MPS8550.
MPS8050
MPS8550
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MPS6562
Abstract: MPS855 MPSA55 MPSA56 PN4355 PN4356 TN4033A TN5322A
Text: This PNP Transistors Material . /% Discrete POW ER & Signal Technologies National I* P N P Copyrighted VCBO VCEO ^EBO ’cBO V < nA @ ^ V) (V) (V) Min Min Min Max ' ' Device No. Case Style MPS855 TO-92 (92) 40 MPS6562 TO-92 (92) 25 25 5 100 20 50 50 35 PN4355
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MPS855
MPS6562
PN4355
PN4356
TN4033A
O-226
TN5322A
MPSA55
MPSA56
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