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    MR 818 DIODE Search Results

    MR 818 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MR 818 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    692A

    Abstract: MOSFET 704 C 704 diode B 817 CMOS threshold Vcc regulator 817 from ST ST 817 STM817 STMicroelectronics 8-pin SOIC power STM805L
    Text: STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 5V Supervisor with Battery Switchover FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V OPERATING VOLTAGE NVRAM SUPERVISOR FOR EXTERNAL LPSRAM CHIP-ENABLE GATING STM818 only FOR


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    STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 STM818 200ms STM690A 692A MOSFET 704 C 704 diode B 817 CMOS threshold Vcc regulator 817 from ST ST 817 STM817 STMicroelectronics 8-pin SOIC power STM805L PDF

    692A

    Abstract: C 704 diode STM690A STM692A STM703 STM704 STM802 STM805 STM805L
    Text: STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 5V Supervisor with Battery Switchover FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V OPERATING VOLTAGE NVRAM SUPERVISOR FOR EXTERNAL LPSRAM CHIP-ENABLE GATING STM818 only FOR


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    STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 STM818 200ms STM690A 692A C 704 diode STM690A STM692A STM703 STM704 STM802 STM805 STM805L PDF

    mr 818 diode

    Abstract: STM690A STM692A STM703 STM704 STM802 STM805 STM805L 6n38 817l
    Text: STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 5 V supervisor with battery switchover Features • 5 V operating voltage ■ NVRAM supervisor for external LPSRAM ■ Chip-enable gating STM818 only for external LPSRAM (7 ns max prop delay) ■


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    STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 STM818 mr 818 diode STM690A STM692A STM703 STM704 STM802 STM805 STM805L 6n38 817l PDF

    817L

    Abstract: 4 pin 817 42mr 33RST STM690A STM692A STM703 STM704 STM802 STM805
    Text: STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 5V Supervisor with Battery Switchover FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V OPERATING VOLTAGE NVRAM SUPERVISOR FOR EXTERNAL LPSRAM CHIP-ENABLE GATING STM818 only FOR


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    STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 STM818 200ms 817L 4 pin 817 42mr 33RST STM690A STM692A STM703 STM704 STM802 STM805 PDF

    Untitled

    Abstract: No abstract text available
    Text: STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 5 V supervisor with battery switchover Features • 5 V operating voltage ■ NVRAM supervisor for external LPSRAM ■ Chip-enable gating STM818 only for external LPSRAM (7 ns max prop delay) ■


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    STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 STM818 PDF

    692A

    Abstract: STM690A STM692A STM703 STM704 STM802 STM805 STM805L
    Text: STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 5 V supervisor with battery switchover Features • 5 V operating voltage ■ NVRAM supervisor for external LPSRAM ■ Chip-enable gating STM818 only for external LPSRAM (7 ns max prop delay) ■


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    STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 STM818 692A STM690A STM692A STM703 STM704 STM802 STM805 STM805L PDF

    817L

    Abstract: 818l STM690A STM692A STM703 STM704 STM802 STM805 STM805L regulator 817 from ST
    Text: STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 5 V supervisor with battery switchover Features • 5 V operating voltage ■ NVRAM supervisor for external LPSRAM ■ Chip-enable gating STM818 only for external LPSRAM (7 ns max prop delay) ■


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    STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 STM818 817L 818l STM690A STM692A STM703 STM704 STM802 STM805 STM805L regulator 817 from ST PDF

    817L

    Abstract: ST 817 817-M 818m
    Text: STM69XA, STM70X, STM80X, STM81X 5V Supervisor with Battery Switchover PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V OPERATING VOLTAGE NVRAM SUPERVISOR FOR EXTERNAL LPSRAM CHIP-ENABLE GATING STM818 only FOR EXTERNAL LPSRAM (7ns max PROP


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    STM69XA, STM70X, STM80X, STM81X STM818 200ms STM690A STM692A STM703 STM704 817L ST 817 817-M 818m PDF

    817L

    Abstract: 692A 805L STM690A STM692A STM703 STM704 STM805L
    Text: STM69XA, STM70X, STM80X, STM81X 5V Supervisor with Battery Switchover FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V OPERATING VOLTAGE NVRAM SUPERVISOR FOR EXTERNAL LPSRAM CHIP-ENABLE GATING STM818 only FOR EXTERNAL LPSRAM (7ns max PROP


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    STM69XA, STM70X, STM80X, STM81X STM818 200ms STM690A STM692A 817L 692A 805L STM690A STM692A STM703 STM704 STM805L PDF

    mixer diode

    Abstract: BAT51 microwave diode ratings BAT51E DO-37
    Text: BAT51E MICROWAVE MIXER DIODE PACKAGE STYLE DO- 37 DESCRIPTION: The ASI BAT51E is a Silicon Microwave Mixer Diode Designed for low noise performance in Applications Operating from 12 to 18 GHz. FEATURES: • • • • Low Noise Fugure Available in reverse polarity by


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    BAT51E BAT51E mixer diode BAT51 microwave diode ratings DO-37 PDF

    BAT51

    Abstract: microwave mixer diode mr 818 diode mixer diode microwave diode ratings 3004 diode noise diode DO-37 MATCHED PAIRS
    Text: BAT51 MICROWAVE MIXER DIODE PACKAGE STYLE DO- 37 DESCRIPTION: The ASI BAT51 is a Silicon Microwave Mixer Diode Designed for low noise performance in Applications Operating from 12 to 18 GHz. FEATURES: • • • • Low Noise Fugure Available in reverse polarity by


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    BAT51 BAT51 microwave mixer diode mr 818 diode mixer diode microwave diode ratings 3004 diode noise diode DO-37 MATCHED PAIRS PDF

    1N23WG

    Abstract: mr 818 diode mixer diode
    Text: 1N23WG SILICON MIXER DIODE DESCRIPTION: PACKAGE STYLE DO- 23 The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package • Matched pairs available by adding


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    1N23WG 1N23WG mr 818 diode mixer diode PDF

    Untitled

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Philip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES ANNOUNCES FIRST QUARTER RESULTS Westlake Village, California — May 13, 1996 — Diodes Incorporated (ASE: DIO)


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    Untitled

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Philip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES REPORTS 5th CONSECUTIVE RECORD YEAR Annual Earnings per Share Up 96% on 52% Increase in Revenues


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    led diod datasheet

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Diodes, Inc. Announces Successful Completion of FabTech Acquisition C.H. Chen Discusses Expectations for Fourth Quarter and 2001 Westlake Village, California – December 5, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors,


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    Untitled

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Philip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES ANNOUNCES $23 MILLION CREDIT FACILITY TO BE BETTER POSITIONED FOR FUTURE GROWTH


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    ISO-9000

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Diodes, Inc. to Acquire Wafer Fab FabTech, Inc. to Support Development of Value-added Product Lines Westlake Village, California – October 30, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors,


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    Untitled

    Abstract: No abstract text available
    Text: Contact Information: Coffin Communications Group 15300 Ventura Boulevard, Suite 303 Sherman Oaks, CA 91403 818 789-0100 Crocker Coulson, Account Executive Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village CA 91362 (805) 446-4800 Carl Wertz, Chief Financial Officer


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    Untitled

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Philip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES SECURES NEW SOURCE OF PROCESSED WAFERS Westlake Village, California — February 16, 1996 — Diodes Incorporated (ASE: DIO)


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    STM6823T

    Abstract: AN1957 STM706 STM705 STM706P STM707 STM708 STM813L 440v ac voltage regulator BackUPS control circuitry, switchover, AC voltage
    Text: AN1957 APPLICATION NOTE Microprocessor Supervisor Functions Designers of microprocessor systems have to achieve high reliability, in the face of a large number of threats to stability or even correct functioning such as, voltage drops, glitches, long ramp-up times, programs stuck in endless loops, etc. .


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    AN1957 STM6823T AN1957 STM706 STM705 STM706P STM707 STM708 STM813L 440v ac voltage regulator BackUPS control circuitry, switchover, AC voltage PDF

    ISO-9000

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Diodes, Inc. Launches Next Generation Product Lines Offers Customized Configurations of Ultra-miniature, Multi-pin Arrays Westlake Village, California – September 5, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors, primarily to the


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    SC-70 OT-363 ISO-9000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Series 347, 8 Bit Digital Phase Invariant Attenuators The Series 347 digitally controlled PIN diode attenuators offer essentially phase free operation over a wide dynamic range in multi-octave frequency bands between 2 and 18 GHz. The attenuators utilize a unique double balanced


    OCR Scan
    DA-15P PDF

    Lautsprecher LP

    Abstract: transistor DA3 307 rft lautsprecher Langwelle Scans-048 26pOL rft tgl rft relais DSAGER0002 DSAGER00028
    Text: T E C H N I S C H E DO KU MEN TA TI ON Progrom m geberleil Pr T 801 Z.Nr 8721BOI—00001 . . 1 2 Bestückung und Zubehör t 1* 2.1 Beatüokung des Pr-T 801 01 (von oben linke)» Funktion 1.2.1.1. 1.2.1.2. 1.2.1*3* 1.2.1.4. 1.2.1*5. 1.2*1»S. 1.2.1.7. 1.2.1.8.


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    8311o814 PV-T803 6E619 MRE826 NSE825 Lautsprecher LP transistor DA3 307 rft lautsprecher Langwelle Scans-048 26pOL rft tgl rft relais DSAGER0002 DSAGER00028 PDF

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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