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    MRA10 Search Results

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    MRA10 Price and Stock

    SunLED Group XEMRA100M

    LED LGT BAR 8.89X3.81MM RED
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    DigiKey XEMRA100M Tube 1,000
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    NAC XEMRA100M 1
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    Belden Inc FM3MRA1032M

    FMT OM3 MPO12(F-O) A 12F 32M
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    DigiKey FM3MRA1032M Bulk 1
    • 1 $295.38
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    Belden Inc FMSMRA1032M

    FMT OS2 MPO12(F-O) A 12F 32M
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    DigiKey FMSMRA1032M Bulk 1
    • 1 $271.48
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    ROHM Semiconductor RLD78MRA1-00A

    CUSTOM LASER DIODE FOR CYBEROPTI
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    DigiKey RLD78MRA1-00A Reel
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    Belden Inc FMSMRA1020MIMDN

    FMT OS2 MPO12(F-O) A 12F 20M
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    DigiKey FMSMRA1020MIMDN Bulk 1
    • 1 $233.26
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    MRA10 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRA100014L Motorola UHF POWER TRANSISTOR Original PDF
    MRA1000-14L Motorola UHF Microwave Transistor Original PDF
    MRA1000-3.5L Motorola UHF Microwave Transistor Original PDF
    MRA100035L Motorola UHF POWER TRANSISTOR Original PDF
    MRA10007L Motorola UHF POWER TRANSISTOR Original PDF
    MRA1000-7L Motorola UHF Microwave Transistor Original PDF
    MRA1014-35 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    MRA10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FERRITE TOROID

    Abstract: motorola 2n2222 2N2222 TIP41 TIP41 amplifier 10 35L C5 2N2222 motorola
    Text: MOTOROLA Order this document by MRA1000–3.5L/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers


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    PDF MRA1000 MRA1000-3 FERRITE TOROID motorola 2n2222 2N2222 TIP41 TIP41 amplifier 10 35L C5 2N2222 motorola

    Untitled

    Abstract: No abstract text available
    Text: MRA1014-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.5m @V(CBO) (V) (Test Condition)28


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    PDF MRA1014-2

    Untitled

    Abstract: No abstract text available
    Text: !j£Ti£u <^£mi-Condu.d:oi ^Products., t/ C/ The RF Line UHF Power Transistor MRA10OO-7L . . designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:


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    PDF MRA10OO-7L 8-32UNC-2A 145D-02

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRA100014L/D SEMICONDUCTOR TECHNICAL DATA UHF Power Transistor MRA1000-14L . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers


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    PDF MRA1000 14L/D MRA1000-14L MRA1000-14L/D* 14L/D

    MRA1014-35

    Abstract: MRA1014
    Text: MRA1014-35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .320 SQ 2L FLG The ASI MRA1014-35 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 1.0 GHz to 1.4 GHz. C B FEATURES: • Diffused Ballast Resistors.


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    PDF MRA1014-35 MRA1014-35 28AXIMUM MRA1014

    BALLAST MOTOROLA

    Abstract: MRA1000-14L 380SOE
    Text: MOTOROLA Order this document by MRA100014L/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-14L . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers


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    PDF MRA1000 14L/D MRA1000-14L MRA1000-14L/D* BALLAST MOTOROLA MRA1000-14L 380SOE

    Untitled

    Abstract: No abstract text available
    Text: MRA1014-6H Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)50â I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF MRA1014-6H

    MOTOROLA 813 transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRA1000–7L/D SEMICONDUCTOR TECHNICAL DATA UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers


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    PDF MRA1000 MRA1000-7L/D* MOTOROLA 813 transistor

    BALLAST MOTOROLA

    Abstract: MRA1000-7L 145D-02
    Text: MOTOROLA Order this document by MRA1000–7L/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers


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    PDF MRA1000 MRA1000-7L MRA1000-7L/D* BALLAST MOTOROLA MRA1000-7L 145D-02

    m28748

    Abstract: m28748 winchester Winchester Electronics mre MRE 34 MRE 41 H winchester electronics litton 50H8 42S-G mre-7s-g 34H-8
    Text: Rack & Panel MRE Series Miniature Rectangular / #20 Contacts / .040" Dia. / 7.5 Amps Receptacle MRE 14S-G Plug MRE 14P-G Hood MRE 14H MRE Series plugs and receptacles are the accepted standard for rectangular-shaped, miniature, internal-type connectors. They


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    PDF 14S-G 14P-G MRE34P8, MRE42P8, MRE34S8, MRE42S8, m28748 m28748 winchester Winchester Electronics mre MRE 34 MRE 41 H winchester electronics litton 50H8 42S-G mre-7s-g 34H-8

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


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    PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    MRA-1225R00JE12

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . WIREWOUND RESISTORS Ideal for Audio and Medical Imaging Equipment MR A Non-Magnetic, Non-Inductive, Axial-Leaded, Wirewound Resistors Key Benefits • Non-magnetic and all welded constructions greatly enhance frequency response.


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    PDF MRA-05) MRA12W25R0J MRA12 02-May-12 VMN-PT0404-1403 MRA-1225R00JE12

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRA1000-14L The RF Line UHF Power Transistor 8 dB TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR . . . designed p rim a rily fo r w id e b an d , larg e -sig n a l o u tp u t and d riv e r a m p lifie r stages to


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    PDF MRA1000-14L 145D-01.

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Pow er Transistor MRA1000-7L . . designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:


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    PDF MRA1000-7L MRA1000-7L

    B108B

    Abstract: 1014-35 1014-12 equivalent MRA1014
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA1014 Series The RF Line M ic ro w a v e P o w er Transistors . . . d e s ig n e d p r im a r ily fo r w id e b a n d , la rg e -s ig n a l o u tp u t a n d d r iv e r a m p lifie r s ta g e s in th e 1 to 1.4 G Hz fre q u e n c y ra n g e .


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    PDF MRA1014 MRA1014-12 108-B B108B 1014-35 1014-12 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA1000-7L The RF Line UHF P o w er T ran sisto r . , . designed prim arily for wideband, large-signal output and driver am plifier stages to 1000 MHz. 9 dB TO 1000 M Hz 7 WATTS BROADBAND UHF POWER TRANSISTOR • Designed for Class A Linear Power Amplifiers


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    PDF MRA1000-7L Sym15

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, large-signal output and driver am plifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Vol1, 1000 MHz Characteristics:


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    PDF MRA1000-7L MRA1000-7L

    TH 2190 Transistor

    Abstract: 10 35L C5
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:


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    PDF MRA1000-3 145D-02, TH 2190 Transistor 10 35L C5

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    ra-100

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RA1000-3.5L The RF Line UHF P o w er T ran sistor 10 dB TO 1000 M H z 3.5 WATTS BROADBAND UHF POWER TRANSISTOR . . . designed p rim a rily fo r w id e b an d , large-signal o u tp u t and d riv e r a m p lifie r stages to


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    PDF RA1000-3 ra-100

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239