MRC097 Search Results

MRC097 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mrc102 Abstract: MRC100 mrc101 MRC103 BLV194 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures	Original	BLV194 OT171 mrc102 MRC100 mrc101 MRC103 BLV194	PDF
BLV194 Abstract: No abstract text available Text: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an	OCR Scan	711065b D0b313fl BLV194 OT171 PINNING-SOT171 MRC097 BLV194	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.	OCR Scan	BLV194 MRC099 MRC097	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

mrc102

Abstract: MRC100 mrc101 MRC103 BLV194
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

Original

BLV194 OT171 mrc102 MRC100 mrc101 MRC103 BLV194

PDF

BLV194

Abstract: No abstract text available
Text: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an

OCR Scan

711065b D0b313fl BLV194 OT171 PINNING-SOT171 MRC097 BLV194

PDF

Untitled

Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.