MRC165
Abstract: PMBF4416 PMBF4416A MRC168 mrc160
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A
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PMBF4416;
PMBF4416A
MAM385
PMBF4416:
PMBF4416A:
MRC165
PMBF4416
PMBF4416A
MRC168
mrc160
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MRC172
Abstract: PMBF5484 marking code 10 sot23 PMBF5485 PMBF5486 MRC165 MRC171
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors
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PMBF5484;
PMBF5485;
PMBF5486
MAM385
MRC172
PMBF5484
marking code 10 sot23
PMBF5485
PMBF5486
MRC165
MRC171
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bf861 application
Abstract: No abstract text available
Text: SO T2 3 BF861A; BF861B; BF861C N-channel junction FETs Rev. 5 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against
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BF861A;
BF861B;
BF861C
MSC895
BF861A
bf861 application
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mrc145
Abstract: MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149
Text: BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken
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BF556A;
BF556B;
BF556C
MSC895
mrc145
MRC147
mrc150
BF556A
BF556B
BF556C
mrc144
MRC149
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BF861A
Abstract: BF861B BF861C BFS10
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF861A; BF861B; BF861C N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 14 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C
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BF861A;
BF861B;
BF861C
MAM036
BF861A:
BF861B:
BF861C:
BF861A
BF861B
BF861C
BFS10
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BF861A
Abstract: BF861B BF861C BFS10
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF861A; BF861B; BF861C N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 14 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C
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BF861A;
BF861B;
BF861C
MAM036
BF861A:
BF861B:
BF861C:
BF861A
BF861B
BF861C
BFS10
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BF556A_BF556B_BF556C
Abstract: No abstract text available
Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
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BF556A;
BF556B;
BF556C
BF556A
BF556A_BF556B_BF556C
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AM/Tuner
Abstract: BF861A BF861B BF861C
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF861A; BF861B; BF861C N-channel junction FETs Product specification Supersedes data of 1995 Apr 14 File under Discrete Semiconductors, SC07 1997 Sep 04 Philips Semiconductors Product specification N-channel junction FETs
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BF861A;
BF861B;
BF861C
MAM036
BF861A:
BF861B:
BF861C:
AM/Tuner
BF861A
BF861B
BF861C
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BF861A_BF861B_BF861C
Abstract: No abstract text available
Text: SO T2 3 BF861A; BF861B; BF861C N-channel junction FETs Rev. 5 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against
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BF861A;
BF861B;
BF861C
MSC895
BF861A
BF861B
BF861C
BF861A_BF861B_BF861C
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Untitled
Abstract: No abstract text available
Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
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BF556A;
BF556B;
BF556C
BF556A
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MRC149
Abstract: MRC148 mrc151 mrc150 BF556A BF556B BF556C mrc144 mrc140 mrc145
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification
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BF556A;
BF556B;
BF556C
MAM036
BF556A:
BF556B:
BF556C:
MRC149
MRC148
mrc151
mrc150
BF556A
BF556B
BF556C
mrc144
mrc140
mrc145
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BF861
Abstract: BF861A BF861B BF861C bf861 application
Text: BF861A; BF861B; BF861C N-channel junction FETs Rev. 04 — 24 September 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against
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BF861A;
BF861B;
BF861C
MSC895
BF861
BF861A
BF861B
BF861C
bf861 application
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MRC149
Abstract: MRC147 mrc150 MRC142 BF556C BF556A BF556B MRC144 *c143 mrc145
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification
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BF556A;
BF556B;
BF556C
MAM036
BF556A:
BF556B:
BF556C:
MRC149
MRC147
mrc150
MRC142
BF556C
BF556A
BF556B
MRC144
*c143
mrc145
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field-effect transistor
Abstract: MRC160 pmbf4416a TRANSISTOR D 471
Text: Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A FEATURES • Low noise • Interchangeability of drain and source connections • High gain. n DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable
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PMBF4416;
PMBF4416A
MAM385
F4416A
PMBF4416
PMBF4416A
cPMBF4416A
MRC166
field-effect transistor
MRC160
TRANSISTOR D 471
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Untitled
Abstract: No abstract text available
Text: b b 5 3 ^31 0 0 2 4 0 3 5 Philips Semiconductors ATT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E D QUICK REFEREN CE DATA • Low noise SYM BOL • Interchangeability of drain and source connections
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PMBF4416;
PMBF4416A
PMBF4416
D024Q4D
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