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Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and
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Abstract: No abstract text available
Text: Document Number: MRF21060 Rev. 8, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from
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MRF21060
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CDR33BX104AKWS
Abstract: MRF21060 MRF21060LR3 MRF21060LSR3
Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from
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MRF21060
MRF21060LR3
MRF21060LSR3
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CDR33BX104AKWS
MRF21060
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CDR33BX104AKWS
Abstract: MRF21060 MRF21060LR3 MRF21060LSR3
Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and
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MRF21060
MRF21060LR3
MRF21060LSR3
MRF21060LR3
CDR33BX104AKWS
MRF21060
MRF21060LSR3
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power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
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