MRF581G
Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA
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MRF581
MRF581G
MRF581A
MRF581AG
2N6255
2N5179
MRF581G
MRF581AG
MRF581A
s-parameter 2N3866A
2N4427
MRF4427
MRF553
MRF581
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MRF581A
Abstract: vebo 25
Text: MRF581A NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF581A is Designed for High current low Power Amplifier Applications up to 1.0 GHz. Dim. Are in mm FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold Metalization System
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MRF581A
MRF581A
vebo 25
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MRF581
Abstract: MRF581A 2N4427 MRF4427 MRF553 MRF555T vk200* FERROXCUBE bfy9 MSC1318
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
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MRF581/MRF581A
MRF581
MRF581A
MSC1318
MRF581
MRF581A
2N4427
MRF4427
MRF553
MRF555T
vk200* FERROXCUBE
bfy9
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MRF581
Abstract: No abstract text available
Text: -^emi-Conducto'i {Ptoducti., Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS features . Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
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MRF581/MRF581A
MRF581A
MRF581
MRF581
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MRF581A
Abstract: MRF581 vk200* FERROXCUBE
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
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MRF581/MRF581A
MRF581
MRF581A
MRF581/MRF581A
MRF581A
MRF581
vk200* FERROXCUBE
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Untitled
Abstract: No abstract text available
Text: MRF581A Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)15
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MRF581A
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MRF581A
Abstract: vk200* FERROXCUBE mrf581 s-parameter 2N4427 2N4427 MRF4427 MRF553 MRF607 C1 macro-X
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
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MRF581/MRF581A
MRF581
MRF581A
MRF4427,
2N4427
MRF553
MRF553T
MRF607
2N6255
2N5179
MRF581A
vk200* FERROXCUBE
mrf581
s-parameter 2N4427
2N4427
MRF4427
MRF553
MRF607
C1 macro-X
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Untitled
Abstract: No abstract text available
Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA
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MRF581
MRF581G
MRF581A
MRF581AG
2N4427
MRF553
MRF553T
MRF607
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vk200* FERROXCUBE
Abstract: MRF581
Text: MRF581 MRF581G MRF581A MRF581AG RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA
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MRF581
MRF581G
MRF581A
MRF581AG
vk200* FERROXCUBE
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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2N4427
Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39
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2N4427
To-39
MRF4427,
2N4427
1300 NPN
MRF553
MRF555
MRF559
MRF607
2N3866A
2N5179
2N6255
MRF4427
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
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2n4427 MOTOROLA
Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz
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2N4427
To-39
BFR91
BFR90
MRF545
MRF544
MSC1301
2n4427 MOTOROLA
motorola 2N4427
2N4427
BFR90 amplifier
2N4427 equivalent bfr91
npn UHF transistor 2N5179
npn UHF transistor
BFR96 LOW POWER TRANSISTOR
MRF581A
mrf5943c motorola
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MRF586
Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA
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MRF517
To-39
MRF571
BFR91
BFR90
MRF545
MRF544
MRF517
MRF586
low cost BFR90 transistor
2n2857 UHF transistor common base amplifier
2n5179
bfr90 equivalent
BFR91 transistor
BFR96
RF POWER TRANSISTOR NPN
MRF904
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RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •
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2N5109
To-39
2N5109
MRF559
MRF4427,
2N4427
MRF553
MRF553T
MRF607
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
2N5179
2N3866A
2N4427
2N6255
MRF4427
MRF553
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MRF553G
Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics
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MRF553
MRF553G
MRF553G
1N4148 diode
2N5179
mrf544
1N4148
2N4427
2N5109
2N6255
MRF4427
MRF553
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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s-parameter 2N4427
Abstract: S-parameter 2N5179 BFR91
Text: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units
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MRF5943,
300MHz
TempeMRF545
MRF544
s-parameter 2N4427
S-parameter 2N5179
BFR91
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BFR91
Abstract: 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz
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BFR91
Vdc00
MRF571
BFR90
MRF545
MRF544
MSC1308
BFR91
2N4427 equivalent bfr91
2N4427
2N5179
2N6255
MRF4427
MRF553
MRF559
MRF607
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MRF559
Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB
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MRF559
2N5109
2N4427
MRF4427,
MSC1317
MRF559
mrf559 v
2N5179
2N6255
2N3866A
2N4427
MRF4427
MRF553
MRF607
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB
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MRF555
MRF545
MRF544
MSC1316
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MRF581
Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz
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MRF581
MRF581A
VK-200,
56-590-65/3B
MRF581A
IS211
MRF581M
f5b FERRITE
f5b FERRITE bead
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TE 2549 MOTOROLA
Abstract: MRF581A motorola MRF5812 RF581 MRF581
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1, R2 NPN Silicon H igh-Frequency Transistors Designed for high current low power am plifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion •
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MRF5812
MRF581
MRF581A
MRF5812,
TE 2549 MOTOROLA
motorola MRF5812
RF581
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MRF581A
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1,R2 NPN Silicon High-Frequency Transistors D e signed for high current low power amplifiers up to 1.0 GHz. • Low N oise 2.0 d B @ 5 0 0 M H z • Low Intermodulation Distortion
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MRF581
MRF581A
MRF5812,
56-590-65/3B
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