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    Motorola Semiconductor Products MRF6404

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    MRF640 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF6401 Freescale Semiconductor 0.5 W, 1.0 to 2.0 GHz, RF LINEAR POWER TRANSISTOR Original PDF
    MRF6401 Motorola RF LINEAR POWER TRANSISTOR Original PDF
    MRF6401 PHOTOMASTER Motorola NPN Silicon RF Power Transistor Original PDF
    MRF6401PHT Motorola NPN Silicon RF Power Transistor Original PDF
    MRF6402 Motorola RF POWER TRANSISTOR NPN SILICON Original PDF
    MRF6403 Motorola RF POWER Scan PDF
    MRF6404 Motorola NPN Silicon RF Power Transistor Original PDF
    MRF6404 Motorola MRF6404 30 W, 1.88 GHz RF Power Transistor Original PDF
    MRF6404 Motorola RF POWER TRANSISTOR NPN SILICON Original PDF
    MRF6404_D Freescale Semiconductor MRF6404 30 W, 1.88 GHz RF Power Transistor - Archived Original PDF
    MRF6404K Motorola RF POWER TRANSISTOR NPN SILICON Original PDF
    MRF6406 Motorola RF POWER Scan PDF
    MRF6408 Motorola RF POWER TRANSISTOR NPN SILICON Original PDF
    MRF6409 Freescale Semiconductor 20 W, 960 MHz, RF POWER TRANSISTOR NPN SILICON Original PDF
    MRF6409 Motorola RF POWER TRANSISTOR NPN SILICON Original PDF
    MRF6409 Motorola MRF6409 960 MHz, 20 W, 26 V RF Power Transistor Original PDF
    MRF6409_D Freescale Semiconductor MRF6409 960 MHz, 20 W, 26 V RF Power Transistor - Archived Original PDF

    MRF640 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular PDF

    motorola rf Power Transistor

    Abstract: motorola 1N4148 1N4148 BD135 MRF6402 5Bp smd transistor data SMD DIODE gp 317
    Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast


    Original     		MRF6402/D MRF6402 MRF6402 MRF6402/D* motorola rf Power Transistor motorola 1N4148 1N4148 BD135 5Bp smd transistor data SMD DIODE gp 317 PDF

    TRANSISTOR A331

    Abstract: 395C-01
    Text: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404/D MRF6404 DCS1800 PCS1900/Cellular TRANSISTOR A331 395C-01 PDF

    RF NPN POWER TRANSISTOR C 10-50 GHZ

    Abstract: 3 pin TRIMMER capacitor ATC100A MJD31C MRF6408 smd z12 transistor 6 pin SMD Z2 37281 smd transistor z4
    Text: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers


    Original     		MRF6408/D MRF6408 MRF6408/D* RF NPN POWER TRANSISTOR C 10-50 GHZ 3 pin TRIMMER capacitor ATC100A MJD31C MRF6408 smd z12 transistor 6 pin SMD Z2 37281 smd transistor z4 PDF

    DIODE SMD 012 MOTOROLA

    Abstract: PL 431 transistor
    Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 13/11/99 The RF Line MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast


    Original     		MRF6402/D MRF6402 MRF6402 MRF6402/D DIODE SMD 012 MOTOROLA PL 431 transistor PDF

    diode 1N4148 SMD PACKAGE DIMENSION

    Abstract: motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148
    Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast


    Original     		MRF6402/D MRF6402 MRF6402 diode 1N4148 SMD PACKAGE DIMENSION motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148 PDF

    MRF6401 PHOTOMASTER

    Abstract: 305C BCV62 MRF6401 TL11 100 pf, ATC Chip Capacitor motorola base station 1995
    Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically


    Original     		MRF6401/D MRF6401 MRF6401 MRF6401PHTing MRF6401/D* MRF6401 PHOTOMASTER 305C BCV62 TL11 100 pf, ATC Chip Capacitor motorola base station 1995 PDF

    11Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404 DCS1800 PCS1900/Cellular MRF6404 11Z4 PDF

    SMD Transistor z6

    Abstract: 37281 transistor 6 pin SMD Z2 transistor SMD Z2 motorola 986 MRF6408 z11 smd SMD 1206 RESISTOR 100 OHMS smd z5 transistor transistor amplifier 3 ghz 10 watts
    Text: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers


    Original     		MRF6408/D MRF6408 SMD Transistor z6 37281 transistor 6 pin SMD Z2 transistor SMD Z2 motorola 986 MRF6408 z11 smd SMD 1206 RESISTOR 100 OHMS smd z5 transistor transistor amplifier 3 ghz 10 watts PDF

    37281

    Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular 37281 TRANSISTOR A331 transistor 31C resistor A331 A153 A331 PDF

    motorola rf Power Transistor Data Book

    Abstract: Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


    Original     		MRF6409 MRF6409 DL110/D) motorola rf Power Transistor Data Book Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book PDF

    Motorola Power Transistor Data Book

    Abstract: BAS16 MRF6409 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR
    Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high


    Original     		MRF6409/D MRF6409 MRF6409 Motorola Power Transistor Data Book BAS16 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR PDF

    305C

    Abstract: BCV62 MRF6401 TL11 motorola Base Station motorola rf Power Transistor smd potentiometer
    Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0–2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and


    Original     		MRF6401/D MRF6401 MRF6401 SOE200 305C BCV62 TL11 motorola Base Station motorola rf Power Transistor smd potentiometer PDF

    552 transistor motorola

    Abstract: MRF6403 1403 Motorola zd 409
    Text: Order this data sheet by MRF6403/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6403 NPN Silicon RF Power Transistor The MRF6403 is designed for 1.8 GHz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold


    OCR Scan     		MRF6403 MRF6403/D MRF6403 2PHX33597Q-0 MRF6403/D 552 transistor motorola 1403 Motorola zd 409 PDF

    MRF6402

    Abstract: transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6402 The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


    OCR Scan     		MRF6402 MRF6402 1N4148 BD135 transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148 PDF

    MRF6401

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is d e signed fo r C lass A com m on e m itter, lin e a r pow er am plifiers in the 1 .0 - 2 .0 GHz frequency range. It has been sp e cifica lly


    OCR Scan     		MRF6401/D MRF6401 MRF6401PHT/D 2PHX33566Q-1 1359A PDF

    smd transistor bcv62

    Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B
    Text: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A


    OCR Scan     		MRF6401PHT/D MRF6401 BCV62 1600-200otorola, smd transistor bcv62 SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B PDF

    RF640

    Abstract: ez808 transistor b 745 RF6404 capacitor 104 Z5 R/Vitramon
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. 30 W , 1.88 GHz


    OCR Scan     		MRF6404 DCS1800 PCS1900/Cellular MRF6404K RF6404 RF6404K F6404 MRF6404K RF640 ez808 transistor b 745 capacitor 104 Z5 R/Vitramon PDF

    transistor bd135

    Abstract: TRANSISTOR 4148 Diode 1N 4148 transistor J9
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Com m unications Network PCN base stations applications. It incorporates high value em itter ballast re s is to rs , gold m e ta lliz a tio n s and o ffe rs a high de g re e of re lia b ility and


    OCR Scan     		MRF6402 BD135 transistor bd135 TRANSISTOR 4148 Diode 1N 4148 transistor J9 PDF

    43 JO smd

    Abstract: 1c smd transistor transistor bd135 chip PCN resistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and


    OCR Scan     		MRF6402 MRF6402 1N4148 BD135 43 JO smd 1c smd transistor transistor bd135 chip PCN resistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6403 is designed for 1.8 GHz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


    OCR Scan     		MRF6403 C9toC12 PDF

    DL110

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6409 is designed for GSM base stations applications. It incorpo­ rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


    OCR Scan     		MRF6409 DL110/D) DL110 PDF

    DB 22 AR transistor smd

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and


    OCR Scan     		MRF6401 MRF6401PHT/D IS21I IS12I DB 22 AR transistor smd PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor T he M R F 6 4 0 4 is d e sig ned fo r 26 vo lts m icro w a ve large sig na l, com m o n em itter, cla ss AB linea r a m p lifie r a p p lica tio n s op e ra tin g in th e range 1.8 to


    OCR Scan     		MRF6404/D PDF