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    MRF6S18140HR3 Search Results

    MRF6S18140HR3 Datasheets (1)

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    MRF6S18140HR3 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

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    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-


    Original
    PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original
    PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi

    j1303

    Abstract: CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 j2479
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805


    Original
    PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j1303 CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 j2479

    Chemi-Con DATE CODES

    Abstract: J6-33 AN1955 JESD22-A114 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-


    Original
    PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3 Chemi-Con DATE CODES J6-33 AN1955 JESD22-A114 MRF6S18140HSR3 Nippon capacitors

    j633

    Abstract: Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 w1760
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805


    Original
    PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j633 Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 w1760

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


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