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    MRF7S21170HR3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF7S21170HR3 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF7S21170HR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-880 Original PDF
    MRF7S21170HR3 Motorola 2110-2170 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs Original PDF

    MRF7S21170HR3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J209

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 0, 5/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H J209

    ATC600 capacitor

    Abstract: MRF7S21170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 ATC600 capacitor MRF7S21170HS

    25C1740

    Abstract: 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3 V10690
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 1, 6/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 25C1740 465B A114 A115 AN1955 JESD22 MRF7S21170HSR3 V10690

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 3, 9/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H

    atc600

    Abstract: 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 5, 4/2008 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 atc600 465B A114 A115 AN1955 JESD22 MRF7S21170HSR3

    0119A

    Abstract: IC/0119A IC/IC/0119A
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 0119A IC/0119A IC/IC/0119A

    atc600

    Abstract: ATC600 CAPACITORS 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3 ATC100B0R3BT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 4, 5/2007 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 atc600 ATC600 CAPACITORS 465B A114 A115 AN1955 JESD22 MRF7S21170HSR3 ATC100B0R3BT500X

    20-60MHz

    Abstract: 100b101jw500xt
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 2, 8/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H 20-60MHz 100b101jw500xt

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 6, 3/2011 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


    Original     		PDF