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    MRFG35010 Price and Stock

    Rochester Electronics LLC MRFG35010NT1

    RF MOSFET PHEMT FET 12V PLD-1.5
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    DigiKey MRFG35010NT1 Bulk 2,600 8
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    Rochester Electronics LLC MRFG35010NR5

    RF MOSFET PHEMT FET 12V PLD-1.5
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    DigiKey MRFG35010NR5 Bulk 688 8
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    Rochester Electronics LLC MRFG35010MR5

    JFET 3-PIN
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    DigiKey MRFG35010MR5 Bulk 235 8
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    Rochester Electronics LLC MRFG35010R5

    RF MOSFET PHEMT FET 12V NI360
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    DigiKey MRFG35010R5 Bulk 158 5
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    Rochester Electronics LLC MRFG35010AR5

    RF MOSFET PHEMT FET 12V NI360
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    DigiKey MRFG35010AR5 Bulk 14 5
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    Find more MRFG35010 price and stock on Findchips.com

    MRFG35010 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRFG35010 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANSISTOR RF FET 3.5GHZ NI360HF Original PDF
    MRFG35010 Freescale Semiconductor MRFG35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT Original PDF
    MRFG35010ANR5 Freescale Semiconductor 3.5GHZ 10W GAAS PLD1.5N Original PDF
    MRFG35010ANT1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANSISTOR RF FET 3.5GHZ PLD-1.5 Original PDF
    MRFG35010ANT1 Freescale Semiconductor Gallium Arsenide PHEMT Original PDF
    MRFG35010AR1 Freescale Semiconductor Gallium Arsenide PHEMT RF Power Field Effect Transistor Original PDF
    MRFG35010AR1 Freescale Semiconductor 3.5GHZ 10W GAAS NI360HF Original PDF
    MRFG35010AR5 Freescale Semiconductor 3.5GHZ 10W GAAS NI360HF Original PDF
    MRFG35010MT1 Freescale Semiconductor 3.5GHZ 9W 12V PWR GAAS Original PDF
    MRFG35010MT1 Freescale Semiconductor MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT Original PDF
    MRFG35010MT1 Motorola FET Transistor, 3.5GHz, 4.5W, 12V Power FET GaAs PHEMT, Tape And Reel Original PDF
    MRFG35010NR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANSISTOR RF 9W 12V POWER FET Original PDF
    MRFG35010NT1 Freescale Semiconductor Rf Power Field Effect Transistor Original PDF
    MRFG35010NT1 Freescale Semiconductor 3.5GHZ 9W 12V PLC1.5N Original PDF
    MRFG35010R1 Freescale Semiconductor 3.5GHZ 10W GAAS NI360HF Original PDF

    MRFG35010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14

    13007 502

    Abstract: motorola marking pld-1.5 package gt 13007 TRANSISTOR
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 3, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010MT1 MRFG35010MT1 13007 502 motorola marking pld-1.5 package gt 13007 TRANSISTOR

    MOTOROLA 944

    Abstract: MOTOROLA TRANSISTOR 935 A113 MRFG35010MT1 PLD15 motorola 4714 SPS 13007 13007 502 731 motorola
    Text: MOTOROLA Order this document by MRFG35010MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35010MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010MT1/D MRFG35010MT1 MOTOROLA 944 MOTOROLA TRANSISTOR 935 A113 MRFG35010MT1 PLD15 motorola 4714 SPS 13007 13007 502 731 motorola

    DIODE 709 1334

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 MRFG35010 MRFG35010/D DIODE 709 1334

    3224W-1-502E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 MRFG35010 3224W-1-502E

    IRL 724 N

    Abstract: MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010 MRFG35010R1 IRL 724 N MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103

    INF 740

    Abstract: Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010R1 MRFG35010
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010 MRFG35010R1 MRFG35010AR1. MRFG35010R1 360HF INF 740 Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010

    6 017 03 61

    Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07

    transistor std 13007

    Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 transistor std 13007 ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2

    s 0938

    Abstract: 1348 c23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. MRFG35010MT1 Advance Information The RF GaAs Line Gallium Arsenide PHEMT 3.5 GHz, 9 W, 12 V


    Original     		PDF MRFG35010MT1 MRFG35010MT1 s 0938 1348 c23

    MRFG35010ANT1

    Abstract: IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 MRFG35010ANT1 IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT

    transistor std 13007

    Abstract: 0944
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010N transistor std 13007 0944

    100A100JP150X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 100A100JP150X

    L 3055 motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 MRFG35010 L 3055 motorola

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1

    100A101JW150XT

    Abstract: transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 100A101JW150XT transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101

    6 017 03 61

    Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1 6 017 03 61 A113 MRFG35010ANT1 Z16C20

    NI-360HF

    Abstract: MRFG35010 MTP23P06V RO4350 DIODE Z5
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from


    Original     		PDF MRFG35010/D MRFG35010 NI-360HF MRFG35010 MTP23P06V RO4350 DIODE Z5

    j 13007

    Abstract: 731 motorola
    Text: MOTOROLA Order this document by MRFG35010MT1/D SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. MRFG35010MT1 Advance Information The RF GaAs Line Gallium Arsenide PHEMT


    Original     		PDF MRFG35010MT1/D MRFG35010MT1 MRFG35010MT1 j 13007 731 motorola

    D55342M07B

    Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet


    Original     		PDF MRFG35010NT1 MRFG35010MT1 D55342M07B 100B102JP500X rick miller MRFG35010M LL-210 D55342M07

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1

    P51ETR-ND

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35010ANT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 P51ETR-ND A113 A114 A115 AN1955 C101 JESD22 MRFG35010ANT1