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    MRFG35010R1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRFG35010R1 Freescale Semiconductor 3.5GHZ 10W GAAS NI360HF Original PDF

    MRFG35010R1 Datasheets Context Search

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    IRL 724 N

    Abstract: MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010 MRFG35010R1 IRL 724 N MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103

    INF 740

    Abstract: Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010R1 MRFG35010
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010 MRFG35010R1 MRFG35010AR1. MRFG35010R1 360HF INF 740 Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010

    POT 5K

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 7, 5/2006 Gallium Arsenide PHEMT MRFG35010R1 MRFG35010R5 RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010 MRFG35010R1 MRFG35010R5 MRFG35010 POT 5K

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010 MRFG35010R1 MRFG35010AR1. MRFG35010R1

    DIODE 709 1334

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 8, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010R1 Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010 MRFG35010R1 MRFG35010 DIODE 709 1334

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF