1n6963
Abstract: 1N6979 1N6970 1N6950 1N6956 1N6986 1N6972 1N6978 1N6966 1N6953
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 March 2004. INCH-POUND MIL-PRF-19500/718 12 December 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT
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MIL-PRF-19500/718
1N6950
1N6986,
MIL-PRF-19500.
1n6963
1N6979
1N6970
1N6956
1N6986
1N6972
1N6978
1N6966
1N6953
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1N6620
Abstract: 1N6621 1N6620U 1N6620US 1N6625 1N6625U 1N6625US 1N6623U
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 January 2010. INCH-POUND MIL-PRF-19500/585H 20 October 2009 SUPERSEDING MIL-PRF-19500/585G 2 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER,
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MIL-PRF-19500/585H
MIL-PRF-19500/585G
1N6620
1N6625,
1N6620U
1N6625U,
1N6620US
1N6625US,
MIL-PRF-19500.
1N6621
1N6625
1N6625U
1N6625US
1N6623U
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33178
Abstract: JANTX 1N5552 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554 1N5554US 1n5551 diode
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
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MIL-PRF-19500/420H
MIL-PRF-19500/420G
1N5550
1N5554,
1N5550US
1N5554US,
MIL-PRF-19500.
33178
JANTX 1N5552
1N5551
1N5551US
1N5552
1N5554
1N5554US
1n5551 diode
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DIODE 1N649
Abstract: diode 351 1N649 JANTX diode 1n645 1N649-1 JANTX 1N647-1 JANTX equivalent 1N647-1 1N647-1 JANTXV 1N649-1 1N649UR1 JAN
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/240R 13 August 2009 SUPERSEDING MIL-PRF-19500/240P 5 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,
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MIL-PRF-19500/240R
MIL-PRF-19500/240P
1N645-1,
1N647-1,
1N649-1,
1N645UR-1,
1N647UR-1,
1N649UR-1,
MIL-PRF-19500.
DIODE 1N649
diode 351
1N649 JANTX
diode 1n645
1N649-1 JANTX
1N647-1 JANTX equivalent
1N647-1
1N647-1 JANTXV
1N649-1
1N649UR1 JAN
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2N2907AUE1
Abstract: award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15
Text: INCH-POUND MIL-PRF-19500/686 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/686
2N2907AUE1
MIL-PRF-19500.
OT-23
O-236)
2N2907AUE1
award 686
qm marking code sot-23
JESD22-A101
JESD22-A102
JESD22-A103
JESD22-A113
MIL-PRF19500
MARKING code sot23 h15
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JESD22-A101
Abstract: JESD22-A102 JESD22-A103 JESD22-A113
Text: INCH-POUND MIL-PRF-19500/674 16 July 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, LOW NOISE TYPE 2N2484UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/674
2N2484UE1
MIL-PRF-19500.
OT-23
O-236)
JESD22-A101
JESD22-A102
JESD22-A103
JESD22-A113
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qm marking code sot-23
Abstract: 8725 maxim transistor 1039 maxim 8725 JESD22-A102 JAN2N3700 JESD22-A101 JESD22-A103 JESD22-A113 sot-23 npn marking code cr
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 24 October, 2003. INCH-POUND MIL-PRF-19500/694A 24 August 2003 SUPERSEDING MIL-PRF-19500/694 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN,
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MIL-PRF-19500/694A
MIL-PRF-19500/694
2N3700UE1,
MIL-PRF-19500.
OT-23
qm marking code sot-23
8725 maxim
transistor 1039
maxim 8725
JESD22-A102
JAN2N3700
JESD22-A101
JESD22-A103
JESD22-A113
sot-23 npn marking code cr
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DD 127 D TRANSISTOR
Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/556F
MIL-S-19500/556E
2N6782,
2N6782U,
2N6784,
2N6784U,
2N6786,
2N6786U
DD 127 D TRANSISTOR
MARKING CODE 556f
2N6782
2N6782U
2N6784
2N6786
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1N6626
Abstract: 1N6626U 1N6626US 1N6627 1N6631 1N6631U 1N6631US 1n6628 jantx 1N6629 JANTX 1N6631 JANTX
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 March 2009. MIL-PRF-19500/590H 4 December 2008 SUPERSEDING MIL-PRF-19500/590G 25 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,
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MIL-PRF-19500/590H
MIL-PRF-19500/590G
1N6626
1N6631,
1N6626U
1N6631U,
1N6626US
1N6631US,
MIL-PRF-19500.
1N6627
1N6631
1N6631U
1N6631US
1n6628 jantx
1N6629 JANTX
1N6631 JANTX
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2N2222AUE1
Abstract: 2N2222A JANTX 2N2222A JANTXV sot-23 npn marking code cr 2N2222A JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 2N2222A 331
Text: INCH-POUND MIL-PRF-19500/672 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/672
2N2222AUE1
MIL-PRF-19500.
OT-23
O-236)
2N2222AUE1
2N2222A JANTX
2N2222A JANTXV
sot-23 npn marking code cr
2N2222A
JESD22-A101
JESD22-A102
JESD22-A103
JESD22-A113
2N2222A 331
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manson
Abstract: JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113
Text: INCH-POUND MIL-PRF-19500/695 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/695
2N4033UE1
MIL-PRF-19500.
OT-23
O-236)
manson
JESD22-A101
JESD22-A102
JESD22-A103
JESD22-A113
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33178
Abstract: 1N5551 JANTX MIL-PRF-19500 1N5550US JANTX 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 June 2003. INCH-POUND MIL-PRF-19500/420G 30 December 2002 SUPERSEDING MIL-PRF-19500/420F 9 October 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER
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MIL-PRF-19500/420G
MIL-PRF-19500/420F
1N5550
1N5554,
1N5550US
1N5554US
33178
1N5551 JANTX
MIL-PRF-19500
1N5550US JANTX
1N5551
1N5551US
1N5552
1N5554
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tl 4311
Abstract: 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6081 DO-35 silicon Rectifier diodes MIL-PRF-19500N
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 October 2010. MIL-PRF-19500/503F w/AMENDMENT 1 28 July 2010 SUPERSEDING MIL-PRF-19500/503F 25 March 2009 PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/503F
1N6073
1N6081,
MIL-PRF-19500.
tl 4311
1N6074
1N6075
1N6076
1N6077
1N6078
1N6081
DO-35 silicon Rectifier diodes
MIL-PRF-19500N
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/503E
MIL-PRF-19500/503D
1N6073
1N6081,
MIL-PRF-19500.
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Untitled
Abstract: No abstract text available
Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UES1104 UES1105 UES1106 RECTIFjERS High Efficiency, 2A DESCRIPTION The UES1104 series is specifically designed for operation in power switching
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UES1104
UES1105
UES1106
UES1104
UES804HR2
MIL-STD-750
5O-60
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2N7292
Abstract: 2N7298 2N7294
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 July 2008. INCH-POUND MIL-PRF-19500/605C 16 April 2008 SUPERSEDING MIL-PRF-19500/605B 4 September 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY
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MIL-PRF-19500/605C
MIL-PRF-19500/605B
2N7292,
2N7294,
2N7296,
2N7298,
MIL-PRF-19500.
2N7292
2N7298
2N7294
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MA47047
Abstract: MA47266 MA47123 MA47111 ma47110
Text: an A M P company Axial Lead PIN Diodes V 2.00 Case Style 54 Features • • • • • Glass Hermetic Sealed Packages Screenable to JAN-TXV and Military Specifications General Purpose Switch Diodes Low Distortion Attenuator Diodes Tape and Reel Packaging Available
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OCR Scan
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PDF
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OT-23
MA47100
MA47110
MA47111
MA47123
MA47266
MA4PH238
MA4PH239
MA4PH236
MA4PH237
MA47047
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ma47111
Abstract: MA47100 1N5719 equivalent MA47600
Text: an A M P company Axial Lead PIN Diodes V 2.00 Case Style 54 Features • • • • • Glass Hermetic Sealed Packages Screenable to JAN-TXV and Military Specifications General Purpose Switch Diodes Low Distortion Attenuator Diodes Tape and Reel Packaging Available
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OCR Scan
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PDF
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OT-23
MA47100
A47110
MA47111
A47123
A47266
A4PH238
MA4PH239
MA4PH236
A4PH237
1N5719 equivalent
MA47600
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ma47110
Abstract: MA47047
Text: m ^ aù k v M n 4 M P com pany Axial Lead PIN Diodes V 2.00 Features • • • • • Case Style 54 Glass Hermetic Sealed Packages Screenable to JAN-TXV and Military Specifications General Purpose Switch Diodes Low Distortion Attenuator Diodes Tape and Reel Packaging Available
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OCR Scan
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PDF
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OT-23
MA47100
MA47110
MA47111
MA47123
MA47266
MA4P278
MA4P277
MA4P274
MA47047
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MA4PH301
Abstract: ma47111 MA4PH401 ma47266 1N5719 equivalent JANTX 1N5719 DIODES Cross Reference 1N5719 MA47120 MA47123
Text: Axial Lead PIN Diodes Features • GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES ■ HIGH VOLUME MANUFACTURING CAPABILITY ■ TAPE AND REEL PACKAGING
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OCR Scan
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PDF
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OT-23
MA47100
MA47110
MA47111
MA47123
MA47266
MA4P270
MA4PH151
MA4PH401
MA4PH301
1N5719 equivalent
JANTX 1N5719
DIODES Cross Reference
1N5719
MA47120
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MA47266
Abstract: ma-47266 DIODES Cross Reference
Text: AfaCOM m an A M P com pany Axial Lead PIN Diodes Case Style 54 Features • G lass H erm etic S ealed P ack ag es • S creen ab le to JAN-TXV a n d M ilitary S pecifications • G e n e ra l P u rp o s e S w itch D io d e s • Low D isto rtio n A tte n u a to r D io d es
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OCR Scan
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PDF
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OT-23
MA47100
MA47110
MA47111
MA4P278
MA4P277
MA4P274
MA4P275
MA4P282
MA47266
ma-47266
DIODES Cross Reference
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Untitled
Abstract: No abstract text available
Text: DUAL POWER SCHOTTKY RECTIFIERS i | £ HR2 30 Amp Pk per diode, 45V FEATURES • Very Low Forward Voltage • Low Recovered Charge • Rugged Packaged Design TO-3 • High Efficiency for Low Voltage Supplies • Dual Schottky Rectifiers in a Single Package
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OCR Scan
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PDF
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SD241
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SD335C
Abstract: No abstract text available
Text: DUAL POWER SCHOTTKY RECTIFIERS 60A Pk, 45V FEATURES • Very Low Forward Voltage • Low Recovered Charge • Rugged Package Design TO-3 • High Efficiency for Low Voltage Supplies • 45V Blocking @ Rated Tjmax • 50V Repetitive Surge Voltage USD335C
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OCR Scan
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USD335C
USD345C
USD335CHR2
USD345CHR2
USD320C
USD300C
SD335C
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Microsemi HR2
Abstract: No abstract text available
Text: MICROSEMI CORP/ Ü1ATERTOUN SGE 3> • 13471b3 GülBl^ó 4^7 ■ U N I T DUAL POWER SCHOTTKY RECTIFIERS yig|g 60A Pk, 45V USD335CHR2 USD345CHR2 H J - o 3 - £ { FEATURES DESCRIPTION • • • • • • • The USD320C series has two Schottky barriers arranged in a common cathode
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13471b3
USD335CHR2
USD345CHR2
USD320C
USD300C
USD335C
USD335CHR2
USD345C
USD345CHR2
345CHR2.
Microsemi HR2
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