dse*60-06A
Abstract: 60-06A DSEI60-06A DSEI60-06AT
Text: DSEI60-06A DSEI60-06AT Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAV = 60 A VRRM = 600 V trr = 35 ms Type A C TO-247 AD C DSEI 60-06A DSEI 60-06AT A C TO-268 AA (AT Type) A A C A = Anode, C = Cathode IFRMS IFAVM IFRM IFSM I2t
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DSEI60-06A
DSEI60-06AT
O-247
0-06A
60-06AT
O-268
dse*60-06A
60-06A
DSEI60-06A
DSEI60-06AT
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Untitled
Abstract: No abstract text available
Text: MDO 600-16N1 IFRMS = IFAVM = VRRM = High Power Diode Modules VRSM V 1700 VRRM V 1600 3 Type 955 A 608 A 1600 V 3 2 2 MDO 600-16N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 85°C; 180° sine IFSM TVJ = 45°C; VR = 0 t = 10 ms t = 8.3 ms TVJ = TVJM;
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600-16N1
E72873
20100203a
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240-06A
Abstract: No abstract text available
Text: DSEC 240-06A HiPerFREDTM Epitaxial Diode IFAV = 2x 120 A VRRM = 600 V trr = 35 ns with soft recovery Non isolated VRSM VRRM V V 600 600 Type DSEC 240-06A Preliminary data Symbol Conditions IFRMS IFAVM TC = 105°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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40-06A
240-06A
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Untitled
Abstract: No abstract text available
Text: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R Glass passivated junction
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P6SMB300A
P6SMB250CA
SMB/DO-214AA
EIA-RS-481)
P6SMB250C
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Untitled
Abstract: No abstract text available
Text: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R • Glass passivated junction
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P6SMB300A
P6SMB250CA
SMB/DO-214AA
EIA-RS-481)
Cur19
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Untitled
Abstract: No abstract text available
Text: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R Glass passivated junction
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P6SMB300A
P6SMB250CA
SMB/DO-214AA
EIA-RS-481)
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Untitled
Abstract: No abstract text available
Text: P6KE6V8 . P6KE440A P6KE6V8C . P6KE440CA 600 W Unidirectional and Bidirectional Transient Voltage Suppressor Diodes Dimensions in mm. ø0.8±0.05 ø3.05±0.1 DO-15 Plastic Peak Pulse Power Rating At 1 ms. Exp. 600 W Reverse stand-off Voltage
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P6KE440A
P6KE440CA
DO-15
Oct-09
100ns
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Untitled
Abstract: No abstract text available
Text: MPK 95-06 DA Advanced Technical Information VRRM = 600 V IFAV = 95 A = 35 ns trr Fast Recovery Epitaxial Diode FRED Module 3 VRSM VRRM V V 600 600 Conditions IFRMS IFAV ① TC = 110°C; sine 180° IFSM TVJ = 45°C; 3 Maximum Ratings 200 95 A A t = 10 ms (50 Hz), sine
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O-240
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Untitled
Abstract: No abstract text available
Text: DSEP 2x 91-06A HiPerFREDTM Epitaxial Diode IFAV = 2x 90 A VRRM = 600 V = 35 ns trr with soft recovery VRSM VRRM V V 600 600 miniBLOC, SOT-227 B Type DSEP 2x 91-06A Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 55°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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1-06A
OT-227
2x91-06A
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2x91
Abstract: 2x91-06a
Text: DSEP 2x 91-06A HiPerFREDTM Epitaxial Diode IFAV = 2x 90 A VRRM = 600 V trr = 35 ns with soft recovery VRSM VRRM V V 600 600 miniBLOC, SOT-227 B Type DSEP 2x 91-06A Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 55°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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1-06A
OT-227
2x91-06A
2x91
2x91-06a
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DIODE 914
Abstract: 2x91-06A
Text: DSEP 2x 91-06A HiPerFREDTM Epitaxial Diode IFAV = 2x 90 A VRRM = 600 V trr = 35 ns with soft recovery VRSM VRRM V V 600 600 miniBLOC, SOT-227 B Type DSEP 2x 91-06A Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 55°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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1-06A
OT-227
2x91-06A
DIODE 914
2x91-06A
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Untitled
Abstract: No abstract text available
Text: P6KE6V8 . P6KE540A P6KE6V8C . P6KE440CA 600 W Unidirectional and Bidirectional Transient Voltage Suppressor Diodes DO-15 Plastic ø0.8±0.05 ø3.05±0.1 Dimensions in mm. Peak Pulse Power Rating At 1 ms. Exp. 600 W Reverse stand-off Voltage
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P6KE540A
P6KE440CA
DO-15
100ns
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smd marking blue
Abstract: T90-A230XSMD EPCOS 230 07 c
Text: Surge Arrester 3-Electrode-Arrester T90-A230XSMD Ordering code: B88069X6680T902 DC spark-over voltage 1 2) 4) 230 ± 20 V % < 580 < 460 V V < 750 < 600 V V >1 GΩ < 1.5 pF 10 5 2 2.5 200 Arms kA kA kA A < 150 < 150 < 150 ms ms ms Transverse delay time 4)
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T90-A230XSMD
B88069X6680T902
smd marking blue
T90-A230XSMD
EPCOS 230 07 c
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Semikron skiip 31 nab 12
Abstract: Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 skiip 31 nab 125 t 12 Semikron skiip 31 nab 12 T 10 semikron skiip 32 semikron skiip nab 12 31 NAB 12 T 16 32NAB12 E6353
Text: SKiiP 31 NAB 06 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Values Units Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 600 ± 20 50 / 35
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Characterisini0607
Semikron skiip 31 nab 12
Semikron skiip 31 nab 12 T 16
semikron skiip 31 nab 125 t 12
skiip 31 nab 125 t 12
Semikron skiip 31 nab 12 T 10
semikron skiip 32
semikron skiip nab 12
31 NAB 12 T 16
32NAB12
E6353
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yx 861
Abstract: yx 5103 yx 861 a
Text: P6SMB6V8 . P6SMB440A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 440 V Power 600 W / ms 0.15±0.1 2.2±0.3 0.2 -0.05 +0.1
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P6SMB440A
P6SMB250CA
SMB/DO-214AA
EIA-RS-481)
yx 861
yx 5103
yx 861 a
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yx 861
Abstract: No abstract text available
Text: P6SMB6V8 . P6SMB440A P6SMB6V8C . P6SMB300CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 440 V Power 600 W / ms 0.15±0.1 2.2±0.3 0.2 -0.05 +0.1
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P6SMB440A
P6SMB300CA
SMB/DO-214AA
yx 861
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS P6KE6.8 – P6KE440A 600 WATT TRANSIENT VOLTAGE SUPPRESSORS SPECIFICATION FEATURES Standard Zener Voltage Range 6.8 to 440 volts Peak Power 600 watts @ 1 ms Maximum Clamp Voltage @ peak pulse current Low Leakage < 5µA above 10 volts
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P6KE440A
MIL-PRF-19500,
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36-08N
Abstract: VUO 36-16NO8
Text: VUO 36 Three Phase Rectifier Bridge VRRM V 800 1200 1400 1600 1800 Conditions IdAV IdAVM TC = 85°C, module TC = 62°C, module IFSM TVJ = 45°C; VR = 0 ~ ~ ~ ~ - Maximum Ratings A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz) 550 600 A A TVJ = TVJM; VR = 0 t = 10 ms (50 Hz)
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36-08NO8
36-12NO8
36-14NO8
36-16NO8
36-18NO8
00-1800V
TVJ50
20100920b
36-08N
VUO 36-16NO8
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Phototransistor L14
Abstract: SL-2341 32 SLP-836A-37 SL-2341-20 SLR-981A SLP-881A-37 SLP-255 SLR-931A SL1255 SLP881A37
Text: Magnetoresistance sensors va max V P max (mW) Vout (ittVrm*) R <Q) Width (mm) MS-0 Device 5.5 50 0.4 to 1.1 600 to 4500 3 MS-E 5.5 50 0.4 to 1.1 600 to 4500 6 MS-F-06 5.5 44 0.16 to 0.42 700 to 4500 3 MS-F-11 5.5 44 0,16 to 0.42 700 to 4500 3 Features High S/N ratio
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MS-F-06
MS-F-11
MS-G-06
MS-H-06
MS-l-09
SLR-932A
SLR-932A-7
SLR-932A-8
SLR-935A
SLR-938A-8
Phototransistor L14
SL-2341 32
SLP-836A-37
SL-2341-20
SLR-981A
SLP-881A-37
SLP-255
SLR-931A
SL1255
SLP881A37
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Untitled
Abstract: No abstract text available
Text: A S E A 03 BROüJN/ABB SEMICON IR Rückwärtsleitende Thyristoren Thyristor V drm V A A/°C A ft 10 ms 8,3 ms 10 ms Tv j =45°C tv jm A A A2s A2s 500 600 700 300 190 110 330 215 120 2850 2 700 CSR 146-05 i- Thyr. CSR 146-06 iCSR 146-07 i- Diode 500 600 700
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T47-10Ã
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IXYS DSEI 2x61-06C
Abstract: 2X61-04C
Text: 1 .7 DSEI 2x 61 Fast Recovery Epitaxial Diode FRED IFAVM V rrm tTr v RS*I V 440 640 Symbol ^FRMS ^FAVH ^FRM ^FSM l2t Vrrm Type V 400 600 DSEI 2X61-04C DSEI 2X61-06C Q I-— 1 >0 1 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A TVJ = 150°C; t = 10 ms (50 Hz), sine
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2X61-04C
2X61-06C
OT-227
E72873
IXYS DSEI 2x61-06C
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Untitled
Abstract: No abstract text available
Text: STANDARD HERMETIC IGBT MODULES WITH GATE DRIVERS HIGH SPEED IG BT DEVICES WITH FAST REVERSE RECOVERY DIODES IGBT CHARACTERISTICS Tc=90°C Continuous Collector Current lc @ To=25°C Pulsed Collector Current T c=25°c 1 ms Volts Amps Amps Amps 600 600 600 600
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SPM2G48-60
SPM2G65-60
SPM2G75-60
SPM2G85-60
SPM4G48-60
SPM6G48-60
SPM6G65-60
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Untitled
Abstract: No abstract text available
Text: nixYS Fast Recovery Epitaxial Diode FRED DSEI30 I fa vm = 37 A VRRM = 600 V trr = 35 ns TO-247 A = Anode, C = Cathode Symbol Test Conditions ^FRMS T VJ — ' favm ' frm 70 37 375 A A A 10 ms (50 Hz), sine 8.3 ms(60 Hz), sine 300 320 A A 10 ms (50 Hz), sine
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DSEI30
O-247
O-247
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Untitled
Abstract: No abstract text available
Text: S E M IK R O N VRSM Ifrms maximum value tor continuous operation 350 A V rrm IF A V (Sin. 180,' Tease 220 A V 400 400 SKND 165/04 600 SKND 165 600 SKND 165/06 800 800 SKND 165/08 1200 1200 SKND 165/12 If a v sin. 180; Ifs m Tv, = T Vj = 2 5 °C; 10 ms 150 °C; 10 ms
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