RXKL 1
Abstract: RXKL 1 1mrk 000 066-AB RXSU 4 066-BB 4u6c 002-BEN 1mrk 002 1MRK 508 002-BEN RXKM 1MRK 514 001-BEN
Text: Time relays RXKL 1 and RXKM 2H 1MRK 508 002-BEN Page 1 Issued January 2006 Revision: A Data subject to change without notice xx05000257 RXKL 1 Features (SE940715) RXKM 2H • For protection, control, signal and industrial applications • Time setting 30 ms to 99 h
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002-BEN
xx05000257)
SE940715)
DC/24-240
DC/48-240
DC/110-240
DC/220-240
066-AB
066-BB
066-CB
RXKL 1
RXKL 1 1mrk 000 066-AB
RXSU 4
066-BB
4u6c
002-BEN
1mrk 002
1MRK 508 002-BEN
RXKM
1MRK 514 001-BEN
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aeg vde 0435
Abstract: oki relay aeg thyristors aeg diode Si 61 L 240V AC/48v output rectifiers circuit diagrams
Text: CONTA-ELECTRONICS ELECTRONICS CONTA-ELECTRONICS CONTA-ELECTRONICS Program Overview 3 4 5 6 10 14 16 22 23 25 27 30 32 34 35 38 39 40 44 46 48 50 52 54 56 58 66 67 68 70 76 90 91 92 94 95 96 98 100 102 104 106 110 112 113 Fuse, Component, Diode and Indicator Modules
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CMS-UI60-UI
D-33161HÃ
aeg vde 0435
oki relay
aeg thyristors
aeg diode Si 61 L
240V AC/48v output rectifiers circuit diagrams
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES • Very low forward voltage drop Base cathode 4, 2 1 Anode • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified
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VS-80APS16PbF,
VS-80APS16-M3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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VS-80APS16PbF,
VS-80APS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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3phase winding data 3.7 kw to 110 kw
Abstract: feeder J74-WKR-B J7KN24 DOL reversing wiring diagram motor J7KNG-22-4 wiring diagram 3 phase dol compressor magnetic Contactor wiring diagrams J7KN14-01 J74KN-C-RC24
Text: Motor Contactor J7KN • Range from 4 to 500 kW AC 3, 380/415 V • AC and DC operated • Integrated auxiliary contacts • Screw fixing and snap fitting (35 mm DIN rail) upto 37 kW • Compliant to the global standards • Finger proof (BGV A2) • System contactors for Fuseless Load Feeders with integrated
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J74KN-C-RC
J74KN-B-RC
J74KN-LG-9030
J74KN-LG-11224
J74KN-LG-10404
J74KN-LG-11457
J74KN-P
J74-WKR-B
J74-WKR-C
J74-WKSD-B
3phase winding data 3.7 kw to 110 kw
feeder
J7KN24
DOL reversing wiring diagram motor
J7KNG-22-4
wiring diagram 3 phase dol compressor
magnetic Contactor wiring diagrams
J7KN14-01
J74KN-C-RC24
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ixys mcc 132 12
Abstract: No abstract text available
Text: Date: 08.08.2011 IXYS Data Sheet Issue: 1 Thyristor/Diode Modules M## 320 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC 3000 320-30io2 320-30io2 320-30io2 3200 320-32io2 320-32io2 320-32io2 3400 320-34io2 320-34io2 320-34io2 3600 320-36io2 320-36io2 320-36io2
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320-30io2
320-32io2
320-34io2
320-36io2
ixys mcc 132 12
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IXYS MCC 425
Abstract: No abstract text available
Text: Date: 08.08.2011 IXYS Data Sheet Issue: 2 Thyristor/Diode Modules M## 501 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC 1200 501-12io2 501-12io2 501-12io2 1400 501-14io2 501-14io2 501-14io2 1600 501-16io2 501-16io2 501-16io2 1800 501-18io2 501-18io2 501-18io2
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501-12io2
501-14io2
501-16io2
501-18io2
IXYS MCC 425
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IXYS M2000-200 thyristor
Abstract: No abstract text available
Text: Date: 08.08.2011 IXYS Data Sheet Issue: 2 Thyristor/Diode Modules M## 501 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC 1200 501-12io2 501-12io2 501-12io2 1400 501-14io2 501-14io2 501-14io2 1600 501-16io2 501-16io2 501-16io2 1800 501-18io2 501-18io2 501-18io2
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501-12io2
501-14io2
501-16io2
501-18io2
IXYS M2000-200 thyristor
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Date: 13.08.2011 IXYS Data Sheet Issue: 1 Dual Diode Modules MD#710-22N2-26N2 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 2200 710-22N2 710-22N2 710-22N2 2400 710-24N2 710-24N2 710-24N2 2600 710-26N2 710-26N2 710-26N2 VOLTAGE RATINGS VDRM VDSM VRRM
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710-22N2-26N2
710-22N2
710-24N2
710-26N2
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Untitled
Abstract: No abstract text available
Text: Date: 13.08.2011 IXYS Data Sheet Issue: 1 Dual Diode Modules MD#810-12N2-18N2 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 1200 810-12N2 810-12N2 810-12N2 1400 810-14N2 810-14N2 810-14N2 1600 810-16N2 810-16N2 810-16N2 1800 810-18N2 810-18N2 810-18N2
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810-12N2-18N2
810-12N2
810-14N2
810-16N2
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diode code md
Abstract: IXYS DIODE MDA 2500 ixys MDD 26 - 14
Text: Date: 13.08.2011 IXYS Data Sheet Issue: 1 Dual Diode Modules MD#710-22N2-26N2 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 2200 710-22N2 710-22N2 710-22N2 2400 710-24N2 710-24N2 710-24N2 2600 710-26N2 710-26N2 710-26N2 VOLTAGE RATINGS VDRM VDSM VRRM
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710-22N2-26N2
710-22N2
710-24N2
710-26N2
diode code md
IXYS DIODE
MDA 2500
ixys MDD 26 - 14
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658512AL
Abstract: cmkm trw 7841 658512A
Text: H M 658512A S e r ie s 5242&8~word x 8 -fait High S p e e d CMOS P se u d o Ita tic RAM H IT A C H I The H itachi HM658512A is a CM O S pseudo siarie R A M organized 512-kword x 8-bit It realizes higher density, higher performance and low power consum ption by em ploying 0.8 >un H i-CM O S
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58512A
HM658512A
512-kword
525-mil
460-mil
600-mil
658512AL
cmkm
trw 7841
658512A
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6585 ADPCM SPEECH SYNTHESIS LSI GENERAL DESCRIPTION The MSM 6585 is an upversion product of the MSM 5205 voice synthesis LSI. Mainly im proved points are im provem ent for the preci sion of an internal DA converter, a built-in low-pass filter, and expansion on the sam
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MSM6585
MSM5205.
12-bit
-40dB
KBR-640B
640kHz)
MIN250psec
125psec
b72424Q
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Untitled
Abstract: No abstract text available
Text: Q 4 4 1 3 ECHO CANCELLER/ VARIABLE RATE VOCODER G EN ER A L DESCRIPTION The QUALCOMM Q4413 Variable Rate Vocoder/Echo When in Variable Rate Mode, the Q4413 codes speech Canceller is a full-duplex speech encoder and decoder at under 10 kbps in continuous speech applications and
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Q4413
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q4413
Abstract: Q4413I-1S1 qualcomm echo canceller viterbi algorithm Q0810 globalstar qualcomm
Text: 04413 VARIABLE RATE VOCODER/ECHO CANCELLER CONTENTS Software Reset C om m and. 28 FEATURES & APPLICATIONS. 4 Software VRS C om m and . 28 Sleep Mode C om m and.29 GENERAL DESCRIPTION.4
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Qualcomm Q4401
Abstract: Q4401 qualcomm 7200 qualcomm qualcomm ww code excited linear predictive BA 658 VOCODER IQG3 Q440I
Text: Q4401 VARIABLE RATE VOCODER GENERAL DESCRIPTION The QUALCOMM Q4401 Variable Rate Vocoder is a full-duplex speech Encoder and Decoder that produces near toll-quality speech at compressed data rates of under 9.6 kilobits per second kbps . The Q4401 provides a single-chip solution to the speech
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Q4401
Q4401
TQ0333fci
DSP1616X11
00333b
Qualcomm Q4401
qualcomm 7200
qualcomm
qualcomm ww
code excited linear predictive
BA 658
VOCODER
IQG3
Q440I
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TC9307AF-014
Abstract: DIODE S4 2G
Text: T O SH IB A TC9307AF-014 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9307AF-01 4 SINGLECHIP DTS MICRO CONTROLLER DTS-12 The TC9307AF-014 is a digital tuning system optimum for such portable audio equipment as radio with a cassette tape recorder, and is provided with 4 bands of F M / S W / M W / L W and compatible
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TC9307AF-014
TC9307AF-01
DTS-12)
TC9307AF-014
5301710k
5311602k
5301610k
146281k
DIODE S4 2G
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FM PLL
Abstract: 44PIN DTS-12 TC9307AF-014 TC9307
Text: TOSHIBA TC9307AF-014 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9307AF-01 4 SINGLECHIP DTS MICRO CONTROLLER DTS-12 The TC9307AF-014 is a digital tuning system optimum for such portable audio equipm ent as radio with a cassette tape recorder, and is provided with 4 bands of F M / S W / M W / L W and compatible
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TC9307AF-014
TC9307AF-01
DTS-12)
TC9307AF-014
1710k
50/100k
1602k
3k-750-
FM PLL
44PIN
DTS-12
TC9307
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Zd 607 MA
Abstract: 658512
Text: HM658512A Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM HITACHI ADE-203-218B Z Rev. 2.0 Apr. 20, 1995 Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 ftm Hi-CMOS process
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HM658512A
524288-word
ADE-203-218B
512-kword
525-mil
460-mil
600-mil
Zd 607 MA
658512
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LCD 1602k
Abstract: TC9307AF-014 Key HH 44PIN DTS-12 1602k
Text: TO SH IBA TC9307AF-014 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9307AF-01 4 SINGLECHIP DTS MICRO CONTROLLER DTS-12 The TC9307AF-014 is a digital tuning system optimum for such portable audio equipment as radio with a cassette tape recorder, and is provided with 4 bands of FM /SW /M W /LW and compatible
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OCR Scan
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TC9307AF-014
TC9307AF-01
DTS-12)
TC9307AF-014
1710k
50/100k
1602k
LCD 1602k
Key HH
44PIN
DTS-12
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Untitled
Abstract: No abstract text available
Text: HM658512A Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh HITACHI ADE-203-218C(Z) Rev. 3.0 Nov. 1997 Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process
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HM658512A
512-kword
ADE-203-218C
525-mil
460-mil
600-mil
TTP-32D
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