BFG67
Abstract: No abstract text available
Text: BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG67;
BFG67/X;
BFG67/XR
BFG67
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6267 ic pin details
Abstract: No abstract text available
Text: BFG92A/X NPN 5 GHz wideband transistor Rev. 06 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG92A/X
BFG92AX
BFG92SERIES
6267 ic pin details
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transistor DATA REFERENCE handbook
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a
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BFG17A
OT143
MSB014
OT143.
transistor DATA REFERENCE handbook
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Untitled
Abstract: No abstract text available
Text: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BF904A;
BF904AR;
BF904AWR
BF904A
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BF1202WR
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR
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BF1202;
BF1202R;
BF1202WR
MSB035
BF1202R
R77/03/pp15
BF1202WR
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer
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BF1211;
BF1211R;
BF1211WR
R77/01/pp16
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NPN N43
Abstract: NPN N37 BFG540 transistor N43
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor
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BFG540;
BFG540/X;
BFG540/XR
BFG540
BFG540/X
SCA56
127127/00/03/pp16
NPN N43
NPN N37
BFG540
transistor N43
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BF 212 transistor
Abstract: BFG67W
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors September 1994 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR
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BFG67W
BFG67W/X;
BFG67W/XR
BFG67W/X
SCD34
BF 212 transistor
BFG67W
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transistor marking NEP ghz
Abstract: BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors Product specification BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs FEATURES
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BF1105;
BF1105R;
BF1105WR
MSB035
BF1105R
R77/03/pp15
transistor marking NEP ghz
BF1105WR
marking code NA
BF1105
MGM253
dual-gate
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MCD088
Abstract: MCD101
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG93A; BFG93A/X; BFG93A/XR NPN 6 GHz wideband transistors Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 25 Philips Semiconductors Product specification BFG93A; BFG93A/X;
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BFG93A;
BFG93A/X;
BFG93A/XR
BFG93
OT143
BFG93A/XR
MCD088
MCD101
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BF1212R datasheet
Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer
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BF1212;
BF1212R;
BF1212WR
SCA75
R77/02/pp15
BF1212R datasheet
BF121
BF1212
BF1212R
BF1212WR
dual-gate
marking CODE ML
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BFQ195
Abstract: BFG197 MCD158 MCD156
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification BFG197; BFG197/X;
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BFG197;
BFG197/X;
BFG197/XR
BFG197
BFG197
OT143
CGY2020G
BFQ195
MCD158
MCD156
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BFR91A transistor datasheet
Abstract: str- 6557 CA 5210 PL BFG93A
Text: DATA SHEET book, halfpage M3D071 BFG93A; BFG93A/X NPN 6 GHz wideband transistors Product specification Supersedes data of 1995 Sep 25 1998 Sep 23 Philips Semiconductors Product specification NPN 6 GHz wideband transistors FEATURES BFG93A; BFG93A/X PINNING
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M3D071
BFG93A;
BFG93A/X
MSB014
OT143B.
OT143B
BFG93A
BFR91A transistor datasheet
str- 6557
CA 5210 PL
BFG93A
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transistor marking NEP ghz
Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs
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BF1105;
BF1105R;
BF1105WR
SCA56
117067/00/03/pp16
transistor marking NEP ghz
dk 2482 transistor
BF1105WR
marking code NA
BF1105
BF1105R
MGM253
dual-gate
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BFG590
Abstract: No abstract text available
Text: BFG590; BFG590/X NPN 5 GHz wideband transistors Rev. 04 — 12 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BFG590;
BFG590/X
Koninkli071112
BFG590
BFG590XR
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N70 transistor
Abstract: No abstract text available
Text: Philips Semiconductors 0031107 bbSSTBl 2 GHz RF power transistor DESCRIPTION T M 5 — APY^eliminaryspecification BFG10; BFG10/X N AUER PHILIPS/DISCRETE bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation
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BFG10;
BFG10/X
OT143
BFG10:
BFG10/X:
MSB014
OT143.
BFG10
N70 transistor
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Untitled
Abstract: No abstract text available
Text: bb53T31 ODEMb^b bTb H A P X Philips Semiconductors N AUER PHILIPS/DISCRETE b7E D Product specification NPN 7 GHz wideband transistor FEATURES • BF752 PINNING PIN High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION
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bb53T31
BF752
BF752
OT143
MSB014
OT143.
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IC 2561 D 431
Abstract: NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93 BFG93A
Text: OGPMf l f l O 0 T 0 Philips Semiconductors NPN 6 GHz wideband transistor — g IAPX Product specification BFG93A; BFG93A/X; BFG93A/XR N AMER P H I L I P S / D I S C R E T E J> b?E PINNING FEATURES PIN • High power gain • Low noise figure • Gold metallization ensures
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BFG93A;
BFG93A/X;
BFG93A/XR
BFG93A
BFG93
BFG93A/X
MSB014
OT143.
IC 2561 D 431
NK 0609 tf
1053 transistor equivalent table
1377 transistor
Philips FA 261
lc 945 p transistor NPN TO 92
lc 945 p transistor NPN
lc 945 p transistor
BFG93A
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transistor K 2937
Abstract: 367-12 BFG10 lc 7220
Text: Philips Semiconductors Preliminary specification UHF power transistor FEATURES • BFG1OW/X PINNING To be supplied. PIN DESCRIPTION 1 collector APPLICATIONS 2 emitter • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. 3 base
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BFG10W/X
OT343
MSB014
OT343.
711Dfl2b
transistor K 2937
367-12
BFG10
lc 7220
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pj 929 diode picture
Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits
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BA481
SAA7197
SAA7199B
TDA4680
TDA4685
pA733C
LFC02
MEH469
pj 929 diode picture
bf471
A7R SMD Transistor
TDA8391
transistor f488
tda8351 pin-compatible
tda1000
Germanium drift transistor
marking 3U 3T 3C diode
germanium transistor
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marking CODE MH
Abstract: PHILIPS dual gate mosfets transistor 1G1
Text: DISCRETE SEMICONDUCTORS BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
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BF904A;
BF904AR;
BF904AWR
BF904AWR
MSB014
BF904A
SCA64
125004/00/03/pp16
marking CODE MH
PHILIPS dual gate mosfets
transistor 1G1
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BFG505W
Abstract: MLC040
Text: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures
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BFG505W
BFG505W/X;
BFG505W/XR
OT343
OT343R
BFG505W/X
BFG505W/XR
BFG505W
711DflZfc.
MLC040
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BF752
Abstract: UHF transistor GHz MSB014
Text: PhiMp^emioonductor^^ • 711QÖBfa QObflbbS 56T M P H I N Product specification NPN 7 GHz wideband transistor FEATURES BF752 e PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION Code: V38
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BF752
BF752
OT143
MSB014
OT143.
UHF transistor GHz
MSB014
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transistor smd zG
Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
Text: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband
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OT143
BFG17A
MSB014
OT143.
711062fci
711062b
7110A2L
transistor smd zG
npn zg
SMD Transistor zG
TRANSISTOR 610 smd
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