Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 1 7 1 7 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power
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OCR Scan
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MSM5117170
576-Word
16-Bit
MSM5117170
42-pin
50/44-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power
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OCR Scan
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576-Word
16-Bit
MSM5117170
42-pin
50/44-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5117170_ 1,048,576-Word x 16-Bit DYNAM IC RAM : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power
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OCR Scan
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MSM5117170_
576-Word
16-Bit
MSM5117170
576-word
42-pin
50/44-pin
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PDF
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m51171
Abstract: No abstract text available
Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.
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OCR Scan
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MSM51V17180
576-Word
18-Bit
MSM51V17180
cycles/32ms
m51171
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PDF
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Bv 42 transistor
Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64ms
Bv 42 transistor
M5116
tsop50
42-PIN
50-PIN
MSM51V16190-70
MSM51V16190-80
TSQP28-P-400-K
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PDF
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MSM5117180-70
Abstract: MSM5117180-80
Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117180
576-Word
18-Bit
MSM5117180
cycles/32ms
MSM5117180-70
MSM5117180-80
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PDF
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DD1750
Abstract: No abstract text available
Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5117900
152-Word
152-w
cycles/32m
32PIN
SOJ32-P-4QO
42PIN
SOJ42-P-400
b754240
DD1750
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PDF
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20 TI 54240
Abstract: MSM51VI6180
Text: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16180
576-Word
18-Bit
MSM51V16180
MSM51VI6180
cycles/64ms
20 TI 54240
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PDF
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32-PIN
Abstract: MSM5116900-70 MSM5116900-80 B724e
Text: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5116900
152-Word
MSM5116900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
MSM5116900-70
MSM5116900-80
B724e
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PDF
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m51171
Abstract: m32AG M5116
Text: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM5116180
576-Word
18-Bit
MSM5116180
cycles/64ms
m51171
m32AG
M5116
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PDF
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42-PIN
Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
Text: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.
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OCR Scan
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MSM51V16180
576-Word
18-Bit
MSM51V16180
MSM51VI6180
cycles/64ms
42-PIN
MSM51V16180-70
MSM51V16180-80
V16180
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PDF
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