marking code 2t7
Abstract: No abstract text available
Text: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY MICRON I QUANTUM DEVICES, MC. FLASH MEMORY 512K x 16,1 MEG x 8 S mart FEATURES oltage 44 3 R P* A ïs C 2 43 3 W E * At 7 C 3 42 □ AS A7 C 4 41 ] A9 A6 C S 40 ] A10 AS C 6 39 3 A 11 A4 C 7 38 3 A 12 A3 C 8
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OCR Scan
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PDF
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MT28F800B1
48-Pin
MT2BF800B1
marking code 2t7
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SOT-23 ASE
Abstract: No abstract text available
Text: ADVANCE MT28F800B1 512K x 16. 1 MEG x 8 FLASH M EM ORY I^ IIC R O N FLASH MEMORY 512K x 1 6 ,1 MEG x 8 BOOT BLOCK FEATURES • Eleven erase blocks: 16K B/8K -w ord boot block protected Tw o 8K B/4K -w ord param eter blocks Eight main m emory blocks • Deep Power-Down Mode: 8|iA at 5V V cc; 8(lA at
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OCR Scan
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PDF
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MT28F800B1
100ns
110ns,
150ns
16-bit
SOT-23 ASE
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Micron Quantum Devices
Abstract: No abstract text available
Text: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY M IC R O N I QkMMVUMMHBMlM G> FLASH MEMORY 512K x 16, 1 MEG x 8 S mart V oltage , FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16K B /8K -w ord b o o t block (protected) T w o 8K B /4K -w ord p ara m e te r blocks
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OCR Scan
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PDF
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MT28F800B1
100ns
110ns,
150ns
576x8
48-PIN
MT2SF80081
Micron Quantum Devices
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