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    MT3S111 Price and Stock

    Toshiba America Electronic Components MT3S111TU,LF

    RF SIGE NPN BIPOLAR TRANSISTOR N
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    DigiKey MT3S111TU,LF Cut Tape 14,664 1
    • 1 $0.67
    • 10 $0.504
    • 100 $0.3847
    • 1000 $0.30579
    • 10000 $0.30579
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    MT3S111TU,LF Digi-Reel 14,664 1
    • 1 $0.67
    • 10 $0.504
    • 100 $0.3847
    • 1000 $0.30579
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    MT3S111TU,LF Reel 9,000 3,000
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    Toshiba America Electronic Components MT3S111(TE85L,F)

    RF TRANS NPN 6V 11.5GHZ SMINI
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    DigiKey MT3S111(TE85L,F) Cut Tape 8,929 1
    • 1 $0.71
    • 10 $0.533
    • 100 $0.4073
    • 1000 $0.32423
    • 10000 $0.32423
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    MT3S111(TE85L,F) Digi-Reel 8,929 1
    • 1 $0.71
    • 10 $0.533
    • 100 $0.4073
    • 1000 $0.32423
    • 10000 $0.32423
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    MT3S111(TE85L,F) Reel 6,000 3,000
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    Newark MT3S111(TE85L,F) Cut Tape 14,973 1
    • 1 $0.254
    • 10 $0.254
    • 100 $0.254
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    EBV Elektronik MT3S111(TE85L,F) 27 Weeks 3,000
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    Toshiba America Electronic Components MT3S111P(TE12L,F)

    RF TRANS NPN 6V 8GHZ PW-MINI
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    DigiKey MT3S111P(TE12L,F) Cut Tape 1
    • 1 $0.98
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    MT3S111P(TE12L,F) Reel 1,000
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    • 1000 $0.4528
    • 10000 $0.3813
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    MT3S111P(TE12L,F) Digi-Reel 1
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    EBV Elektronik MT3S111P(TE12L,F) 1,000 25 Weeks 1,000
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    Toshiba America Electronic Components MT3S111(TE85LF)

    Trans RF BJT 6V 0.1A 3-Pin SC-59 Emboss T/R - Product that comes on tape, but is not reeled (Alt: 09AK5786)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MT3S111(TE85LF) Ammo Pack 32 Weeks, 4 Days 1
    • 1 $0.655
    • 10 $0.576
    • 100 $0.456
    • 1000 $0.456
    • 10000 $0.456
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    MT3S111(TE85LF) Reel 3,000
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    Toshiba America Electronic Components MT3S111P(TE12LF)

    TOSMT3S111P(TE12LF) RADIO FREQUENCY TRA - Tape and Reel (Alt: MT3S111P(TE12L,F))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MT3S111P(TE12LF) Reel 1,000
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    MT3S111 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S111P Toshiba Japanese - Transistors Original PDF
    MT3S111P Toshiba Transistors Original PDF
    MT3S111P(TE12L,F) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N Original PDF
    MT3S111(TE85L,F) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N Original PDF
    MT3S111TU Toshiba Japanese - Transistors Original PDF
    MT3S111TU Toshiba Transistors Original PDF
    MT3S111TU,LF Toshiba America Electronic Components RF SIGE NPN BIPOLAR TRANSISTOR N Original PDF

    MT3S111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT3S111TU

    Abstract: No abstract text available
    Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05


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    PDF MT3S111TU MT3S111TU

    Untitled

    Abstract: No abstract text available
    Text: MT3S111P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111P ○ VHF~UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=0.95 dB 標準 (@ f=1 GHz) •


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    PDF MT3S111P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)


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    PDF MT3S111P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12 dB (typ.) (@ f=1 GHz) 2 Marking


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    PDF MT3S111 O-236 SC-59

    Untitled

    Abstract: No abstract text available
    Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking


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    PDF MT3S111 O-236 SC-59

    MT3S111P

    Abstract: No abstract text available
    Text: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)


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    PDF MT3S111P SC-62 MT3S111P

    mt3s111

    Abstract: No abstract text available
    Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking


    Original
    PDF MT3S111 O-236 SC-59 mt3s111

    Untitled

    Abstract: No abstract text available
    Text: MT3S111TU 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111TU ○ VHF~UHF 帯 低雑音・低歪み増幅用 単位: mm 2.1±0.1 3 1 2. エミッタ 3. コレクタ UFM JEDEC JEITA 東芝 2-2U1B 質量: 6.6 mg 標準


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    PDF MT3S111TU

    Untitled

    Abstract: No abstract text available
    Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 High Gain: |S21e| =12.5 dB typ. (@ f=1 GHz) 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR R5 1 1 0.7±0.05


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    PDF MT3S111TU

    Untitled

    Abstract: No abstract text available
    Text: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: |S21e| =10.5 dB (typ.) (@f=1 GHz)


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    PDF MT3S111P

    Untitled

    Abstract: No abstract text available
    Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05


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    PDF MT3S111TU 10led

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


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    PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


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    PDF BCE0003H 3sk catalog TE85L Toshiba

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


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    PDF BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


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    PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


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    PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


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    PDF SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor