MT4C16257DJ-6
Abstract: MT4C16257 MT4C16257DJ-6 pin out mt4c16257dj
Text: 256K x 16 FPM DRAM TECHNOLOGY, INC. MT4C16257 DRAM FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • All inputs, outputs and clocks are TTL-compatible
|
Original
|
MT4C16257
512-cycle
40-Pin
MT4C16257DJ-6
MT4C16257
MT4C16257DJ-6 pin out
mt4c16257dj
|
PDF
|
TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
|
Original
|
256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
|
PDF
|
am29f010b-70ef
Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
Text: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI
|
Original
|
PD4218165
PD424260
PD431000A
PD43256B
PD441000L-B
PD442000L-B
PD442012L-XB
PD444012L-B
A29F002
am29f010b-70ef
A29010-70F
AM29F040B-55JF
AM29F040B-90jf
Pm25LV512A
am29f800bb-70ef
S29AL004D55TFI02
AM29F040B-90JI
AM29F010B70JF
tc55257 cross reference
|
PDF
|
MT4C16257
Abstract: No abstract text available
Text: MT4C16257 L 256KX 16 DRAM (M IC R O N 256K x 16 DRAM DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V +10% power supply*
|
OCR Scan
|
MT4C16257
256KX
375mW
512-cycle
12/9S
L1115H7
|
PDF
|
BCM 6302
Abstract: micron MT4C database for 4081 ic
Text: OBSOLETE MARCH 1995 D18A 512K X 8, 256K x 16 D R A M D IE I^IICRON 512Kx 8, 256Kx 16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A G EN ERAL PHYSICAL SPECIFICATIONS • Wafer thickness =18.5 mils ±0.5 mils. • The backside wafer surface Is polished bare silicon.
|
OCR Scan
|
114x114
512Kx
256Kx
MT4C8512D18A
MT4C16257D18A
150mm
BCM 6302
micron MT4C
database for 4081 ic
|
PDF
|
MT4C16257DJ-6
Abstract: No abstract text available
Text: 256K X 16 FPM DRAM MICRON I TECHNOLOGY, INC. DRAM MT4C16257 FEATURES • In d u stry -sta n d a rd x l6 p in o u ts, tim ing, functions an d packages • H igh-perform ance CM OS silicon-gate process • Single +5V +10% p o w er su p p ly • All in p u ts, o u tp u ts an d clocks are TTL-com patible
|
OCR Scan
|
MT4C16257
512-cycle
40-Pin
MT4C16257DJ-6
|
PDF
|
MT4C16257
Abstract: No abstract text available
Text: p iC R MT4C16257 L 256K X 16 DRAM O N DRAM 256K x 16 DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • In d u stry-stan d ard x l 6 p in o u ts, tim in g , fu n ctio n s an d p ackages • H ig h -p erfo rm a n ce C M O S silico n -g a te p ro cess
|
OCR Scan
|
MT4C16257
512-cy
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MICRON MT4C16257 256K X 16 DRAM I ,lt— DRAM 256K x 16 DRAM 5V, FAST PAGE M O DE PIN ASSIGNMENT Top View • In d u stry -sta n d a rd x l 6 p in o u ts, tim in g , fu n ctio n s an d packages • H ig h -p erfo rm a n ce C M O S silico n -g ate process
|
OCR Scan
|
MT4C16257
12-cy
40-Pin
00122A2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b?E D • b 1 1 1 5 MT 000^7=57 711 ■ MRN OBSOLETE JUNE 94 D18A 512K X 8, 256K X 16 DRAM DIE M IC R O N B SEMiCONO'JCTOa INC. 512Kx8, 256Kx16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A GENERAL PHYSICAL SPECIFICATIONS • • •
|
OCR Scan
|
114x114
512Kx8,
256Kx16
MT4C8512D18A
MT4C16257D18A
150mm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON MT4LC16257 S I 2256KX 5 6 K X 16 DRAM DRAM 256K x 16 DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process
|
OCR Scan
|
MT4LC16257
256KX
512-cycle
MT4LC16257)
T4LC16257S)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT2D25632, MT4D51232 256K, 512K x 32 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM MODULE 256K, 512K x 32 1, 2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View OPTIONS 72-Pin SIMM (DD-5) 256K x 32 (DD-6) 512K x 32 o imïïïïirrffrrmmy^^ 1 PIN#
|
OCR Scan
|
MT2D25632,
MT4D51232
72-Pin
41ucts
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m i t i » MT4C16256/7/8/9 L 256K X 1 6 WIDE DRAM MICRON • SEMICONDUCTOR. MC WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
|
OCR Scan
|
MT4C16256/7/8/9
256KX16DRAM
MT4C16257
MT4C16258/9
512-cycle
500mW
T4C1S256/7/VU.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: '993 Tí* PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE
|
OCR Scan
|
MT4C16256/7/8/9
40-Pin
C1993
MT4C162S6/7/V9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256KX16DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIG N M EN T Top View OPTIONS • Write Cycle Access BYTE or WORD via WE - (maskable) BYTE or WORD via CÄS (maskable) • Packages
|
OCR Scan
|
MT4C16256/7/8/9
256KX16DRAM
40-Pin
MT4C16256/7/8/9L
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: HICR0N TECHNOLOGY INC bOE D • b l l l S H 1! GGObbOl 43b ■ urn PRELIMINARY 256K x 16 DRAM WIDE DRAM FAST-PAGE-MODE SELF REFRESH FEATURES PIN ASSIGNMENT Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 p inouts, tim ing, functions
|
OCR Scan
|
500mW
512-cycle
MT4C16256/7/8/9S
MT4C16256/7/8/9
|
PDF
|
MT4C16256DJ-7
Abstract: No abstract text available
Text: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*
|
OCR Scan
|
256Kx
16DRAM
512-cycle
MT4C16257
MT4C16256/7
CYCLE24
MT4CI82S4/7
1QT94
QD1111D
MT4C16256DJ-7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C16256/7/8/9 256KX 16 WIDE DRAM MICRON WIDE DRAM 256K 16 DRAM X FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500m W active, typical
|
OCR Scan
|
MT4C16256/7/8/9
256KX
512-cycle
40-Pin
|
PDF
|
MA4380
Abstract: DU20
Text: MT2D25632, MT4D51232 256K. 512K x 32 DRAM M O D U LE M IC R O N 256K, 512K x 32 DRAM MODULE 1 ,2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT (Front View • JEDEC- and industry-standard pinout in a 72-pin single-in-line m emory module (SIMM) • High-perform ance CM OS silicon-gate process
|
OCR Scan
|
MT2D25632,
MT4D51232
72-pin
756mW
512-cycle
MT4D51232
T4D51232
MA4380
DU20
|
PDF
|
0Q1335
Abstract: No abstract text available
Text: PRELIMINARY M T4C 16256/7/8/9 256K X 16 W IDE DRAM I^IICZROIM 256K X 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • I n d u s try -s ta n d a rd x l6 p in o u ts, tim in g , fu n ctio n s a n d p ack ag e s • H ig h -p e rfo rm a n c e C M O S silicon-gate pro c e ss
|
OCR Scan
|
512-cycle
0Q1335
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NI CR ON S F 1 I C C N D U C T O R INC blllS'-H Ü 0 1 0 0 Q Ü 5 b^ • URN bTE i MICRON I M T4 D 51232 5 12 K X 3 2 D R A M M O D U L E sem iconductorm e. DRAM MODULE 512K x 32 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line
|
OCR Scan
|
72-pin
512-cycle
51232M
CYCLE20
MT4D51Z32
MT4D51232
|
PDF
|
VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
|
OCR Scan
|
256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M IC S Q N I IIW - 1 W IH • t s em c o n o u c to r MT2D88C25632, MT4D88C5123Z 1MBr 2MB DRAM CARDS n c DRAM CARD 1, 2 MEGABYTES 256K, 512K x 32; 5.0V FAST PAGE MODE FEATURES • Low power • JEDEC-standard 88-pin DRAM card pinout • Polarized receptacle connector
|
OCR Scan
|
MT2D88C25632,
MT4D88C5123Z
88-pin
MT2DMC25C32.
C51232
GD11374
MT4D88C51232
MT20MC2S632.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM 256K X 16 DRAM 5V, FAST PAGE MODE IEATURES • Industry-standard xl6 pinouts, timii g, functions and packages • High-performance CMOS silicon-ga e process • Single +5V ±10'^ power supply* • Low power, 3mW standby; 375mW ictive, typical • All device pins are fully TTL-compa ible
|
OCR Scan
|
375mW
512-cycle
40-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m ' i PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM MICRON I SEMICONDUCTOR MC WIDE DRAM 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • H igh-perform ance CMOS silicon-gate process
|
OCR Scan
|
MT4C16256/7/8/9
T4C16257/9
T4C16258/9
512-cyde
500mW
MT4C162S6/7/W
|
PDF
|
