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    MT4C4007J Price and Stock

    Micron Technology Inc MT4C4007JDJ-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MT4C4007JDJ-6 17,410
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    Quest Components MT4C4007JDJ-6 13,928
    • 1 $4.5
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    • 100 $4.5
    • 1000 $4.5
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    MT4C4007JDJ-6 1,227
    • 1 $4.5
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    MT4C4007JDJ-6 120
    • 1 $4.2
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    • 100 $2.59
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    mt MT4C4007JDJ6

    1 MEG X 4 EDO DRAM EDO DRAM, 1MX4, 60ns, CMOS, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MT4C4007JDJ6 1,394
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    MT4C4007J Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MT4C4007JDJ-6 Micron 1 MEG x 4 EDO DRAM Original PDF
    MT4C4007JDJ-6L Micron DRAM Original PDF
    MT4C4007JDJ-6L Micron 1 MEG x 4 EDO DRAM Original PDF

    MT4C4007J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT4C4007JDJ-6

    Abstract: MT4C4007JDJ-6L A4 marking EDO DRAM
    Text: OBSOLETE 1 MEG x 4 EDO DRAM MT4C4007J DRAM FEATURES PIN ASSIGNMENT Top View Single +5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible Refresh modes: RAS#-ONLY, CAS#-BEFORE- RAS#


    Original     		PDF MT4C4007J 024-cycle 128ms 20/26-Pin MT4C4007JDJ-6 MT4C4007JDJ-6L A4 marking EDO DRAM

    MT4C4007JDJ-6

    Abstract: MT4C4007J MT4C4007JDJ-6L
    Text: MT4C4007J L 1 MEG x 4 DRAM TECHNOLOGY, INC. 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES Single +5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible


    Original     		PDF MT4C4007J 024-cycle 128ms 20/26-Pin 128ms MT4C4007JDJ-6 MT4C4007JDJ-6L

    MT16D232M

    Abstract: MT16D232 MT4C4007JDJ
    Text: OBSOLETE 1, 2 MEG x 32 DRAM SIMMs MT8D132 X MT16D232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module (SIMM) • 4MB (1 Meg x 32) and 8MB (2 Meg x 32) • High-performance CMOS silicon-gate process


    Original     		PDF MT8D132 MT16D232 72-pin, 024-cycle MT16D232M MT4C4007JDJ

    edo dram 60ns 72-pin simm

    Abstract: MT16D232
    Text: MT8D132 X , MT16D232(X) 1 MEG, 2 MEG x 32 DRAM MODULES TECHNOLOGY, INC. 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM)


    Original     		PDF MT8D132 MT16D232 72-pin, 824mW 024-cycle 72-PiP edo dram 60ns 72-pin simm

    MT41LC256K32D4

    Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
    Text: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏


    Original     		PDF

    EDO DRAM

    Abstract: No abstract text available
    Text: 1 MEG x 4 EDO DRAM M IC R O N I TFCHNOl.GOY l';C DRAM MT4C4007J FEATURES PIN ASSIGNMENT Top View Single +5V ±10% pow er supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible


    OCR Scan     		PDF MT4C4007J 024-cycle 128ms 20/26-Pin EDO DRAM

    4c4007

    Abstract: 4007J
    Text: MT4C4007J L 1 MEG X 4 DRAM |u iic n o N 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • • • • • S in g le + 5 V ± 1 0 % p o w er su p p ly JE D E C -sta n d a rd p in o u t and p ack ag es H ig h -p erfo rm a n ce C M O S silico n -g ate process


    OCR Scan     		PDF MT4C4007J 024-cy 20/26-Pin T2/95 4c4007 4007J

    LIS-1024

    Abstract: No abstract text available
    Text: OBSOLETE M I C R O N 1 ^cnllvZ DRAM E G x 4 MT4C4007J FEATURES PIN ASSIGNMENT Top View • • • • • Single +5V +10% pow er supply JED EC-standard pinout and packages H igh-perform ance CM OS silicon-gate process All inputs, outputs and clocks are TTL-com patible


    OCR Scan     		PDF 024-cycle 128ms MT4C4007J 20/26-Pin 128ms LIS-1024

    T4C4007JDJ-7

    Abstract: No abstract text available
    Text: PRELIMINARY MT4C4007J S 1 MEG X 4 DRAM M IC R O N 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • • • • • Single +5V ±10% power supply JEDEC-standard pinout and packages High-perform ance CM OS silicon-gate process


    OCR Scan     		PDF MT4C4007J 024-cycle 128ms 25-35ns 20/26-Pin T4C4007JDJ-7

    Untitled

    Abstract: No abstract text available
    Text: MT4C4007J L 1 MEG X 4 DRAM (M IC R O N 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH PIN ASSIGNMENT (Top View) • • • • • Single +5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C4007J 024-cycle 128ms 20/26-Pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY .ü ïïi04,0^ !? -j, MEG x 4 DRAM « ch«oL„ „ « DRAM 1 MEG x 4 DRAM FEATURES * * » * «• Single +5V ±10% power supply JEDEC-standard pinout and packages High-perform ance CMOS silicon-gate process All inputs, outputs and clocks are TTL-com patible


    OCR Scan     		PDF 024-cycle 128ms 25-35ns 128ms MT4C4007J 001E024

    Untitled

    Abstract: No abstract text available
    Text: MT8D132 X , MT16D232(X) 1 MEG, 2 MEG x 32 DRAM MODULES MICRON I TÉCHNOICSY INC. DRAM 1 MEG, 2 MEG x 32 II E IV IV J U U L C 4. 8 MEGABYTE, SV, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,


    OCR Scan     		PDF MT8D132 MT16D232 72-pin, 824mW 024-cycle

    T4C4007J

    Abstract: No abstract text available
    Text: OBSOLETE 1, 2 MEG X 32 DRAM SIMMs MICRON I TECHNOLOGY, INC. MT8D132 X MT16D232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JED EC - and industry-standard pinout in a 72-pin, single in-line m em ory m odule (SIMM) • 4M B (1 M eg x 32) and 8MB (2 M eg x 32)


    OCR Scan     		PDF MT8D132 MT16D232 72-pin, 024-cycle 72-Pin T4C4007J

    MT4C4007JDJ

    Abstract: No abstract text available
    Text: ADVANCE MICRON MT9D136A X, MT18D236A X 1 MEG, 2 MEG x 36 DRAM MODULES DRAM MODULE 1 MEG, 2 MEG x 36 • TECHNOLOGY, INC. 4, 8 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES • Four CAS# ECC pinout in a 72-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT9D136A MT18D236A 72-pin, 602mW 024-cycle 72-pin MT4C4007JDJ

    MT4C4007JDJ-7

    Abstract: MT4C4007JDJ7 marking 3GY MRP21
    Text: PRELIMINARY iimiy—a n i v f wlt4C40Q7J S t MEG x: 4 DRAM 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH ] MATURES • Single +5V ±10% pow er supply ■ JED EC-standard pinout and packages ■ High-performance C M O S silicon-gate process


    OCR Scan     		PDF wlt4C40Q7J 024-cycle 128ms 25-35ns 20/26-Pin MT4C4007J C1995. MT4C4007JDJ-7 MT4C4007JDJ7 marking 3GY MRP21

    EDO DRAM

    Abstract: MT4C4007JDJ-6L MT4C4007JDJ-6
    Text: 1 MEG x 4 EDO DRAM V IIC Z R C H V S DRAM M T4C 4007J FEATURES PIN ASSIGNMENT (Top View Single+5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible Refresh modes: RAS#-ONLY, CAS#-BEFORE- RAS#


    OCR Scan     		PDF 4007J 024-cycle 128ms 20/26-Pin 128ms EDO DRAM MT4C4007JDJ-6L MT4C4007JDJ-6

    MT4C4007JDJ

    Abstract: No abstract text available
    Text: ADVANCE M T 9 D 1 3 6 A X, M T 1 8 D 2 3 6 A X 1 MEG, 2 MEG x 36 DR AM M O D U L E S DRAM MODULE 1 MEG, 2 MEG x 36 4, 8 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES * * * * * * * * PIN ASSIGNMENT Front View Four CAS# ECC p in o u t in a 72-pin, single-in-line


    OCR Scan     		PDF 72-Pin 72-pin, 024-cycle MT4C4007JDJ