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    MT4LC1M16H5

    Abstract: No abstract text available
    Text: PRELIMINARY MT4LC1M16H5 1 MEG x 16 BURST EDO DRAM TECHNOLOGY, INC. BURST EDO DRAM 1 MEG x 16 FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5%


    Original     		PDF MT4LC1M16H5 024-cycle 44/50-Pin MT4LC1M16H5

    MT41LC256K32D4

    Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
    Text: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4LC1M16H5 1 MEG x 16 BURST EDO DRAM DRAM 1 MEG x 16 3.3V, BURST EDO FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single +3.3V ±5%power supply • All inputs and outputs are LVTTL-compatible with 5V


    OCR Scan     		PDF MT4LC1M16H5 024-cycle 42-Pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N I MT4LC1M16H5 1 MEg x 16 BURST EDO DRAM BURST EDO DRAM 1 MEG x 16 FEATURES • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V


    OCR Scan     		PDF MT4LC1M16H5 024-cycle 0Q13Q37

    M16H5

    Abstract: No abstract text available
    Text: . 1 1— » - « w . 1 DRAM M E G x 1 6 B U R S MT4LC1M16H5 T E D D R A M 1 MEG x 16 3.3V, BURST EDO FEATURES PIN ASSIGNMENT Top View • B u rst ord er, interleav e o r linear, p ro g ra m m ed by execu tin g W C B R cy cle a fter initializatio n • Sin g le +3 .3 V ± 5 % p o w e r sup ply


    OCR Scan     		PDF MT4LC1M16H5 024-cy MT4LC1M16HS M16H5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY fI M I C R O I M 1 M E Q x 1 6 B U R MT4LC1M16H5 ST E D 0 QRAM BURST EDO □RAM 1 MEG x 16 FEATURES • Burst order, interleave or linear, programmed by executing W C B R cycle after initialization • Single power supply: +3.3V ±5% • A ll inputs and outputs are L V T T L compatible w ith 5V


    OCR Scan     		PDF MT4LC1M16H5 024-cycle 44/50-Pin A7-A10 000xB 1T4LC1M16M&

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by


    OCR Scan     		PDF MT4D232 MT8D432 72-pin, 024-cycle 048-cycle P199S.

    B9535

    Abstract: 1M16
    Text: PRELIMINARY MT4LC1 M16H5 1 MEG x 16 BURST EDO DRAM BURST EDO DRAM 1 MEG x 16 FEATURES PIN ASSIGNMENT Top View • B urst order, interleave or linear, p ro gram m ed by executing W CBR cycle after initialization • Sin gle p o w er su p p ly : +3.3V ±5%


    OCR Scan     		PDF M16H5 024-cycle 44/50-Pin A7-A10 000xB B9535 1M16

    MT8D432-8

    Abstract: No abstract text available
    Text: M IC R O N 1 MT2D T 132 B, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 DRAM MODULES DRAM MODULE 1,2, 4 MEG 32 X 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES OPTIONS PIN ASSIGNMENT (Front View) 72-Pin SIMM (D D -11) 1 M eg x 32 T S O P version (D D -9) (D D -8) (D D -3)


    OCR Scan     		PDF MT4D232 MT8D432 72-pin, 024-cycle 048-cycle MT40232 MT80432 MT8D432-8

    Untitled

    Abstract: No abstract text available
    Text: M ir -r a r n iS J I ^ MT2D T 132 e, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 DRAM MODULES 1,2, 4 MEG X 32 DRAM MODULE 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES OPTIONS PIN ASSIGNMENT (Front View) 72-Pin SIMM (DD-11) (DD-9) (DD-8) (DD-3) MARKING • Timing 52ns access; 15ns cycle


    OCR Scan     		PDF MT4D232 MT8D432 72-Pin DD-11) 0D13bBl

    MT4LC4M4G6

    Abstract: No abstract text available
    Text: ADVANCE M IC n a iS I I MT4LD T 164A B, MT8LD264A B, MT16LD464A B 1,2, 4 MEG X 64 BURST EDO DRAM MODULES 1, 2, 4 MEG X 64 BURST EDO DRAM MODULE 8, 16, 32 MEGABYTE, 3.3V, NONBUFFERED, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (DIMM)


    OCR Scan     		PDF MT8LD264A MT16LD464A 168-Pin 168-pin, 024-cycle 048-cycle MT8LD264AB. MT4LC4M4G6

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M • ir S D N MT4 LD T 164 B(N ), MT8LD264 B(N ), MT16LD464 B(N ) 1 ,2 ,4 M EG X 64 B U R S T EDO DRAM M O D U LES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (D IM M )


    OCR Scan     		PDF MT8LD264 MT16LD464 168-Pin 168-pin, 024-cycle column-00 0D1310Ã

    marking 4LD

    Abstract: CSR 6110
    Text: ADVANCE M IC Z n O N 1 MT4LD T 164A B, MT8LD264A B, MT16LD464A B 1, 2, 4 MEG X 64 BURST EDO DRAM MODULES BURST EDO DRAM MODULE 1, 2, 4 MEG PIN ASSIGNMENT (Front View) 168-Pin DIMM (DE-9) 1 Meg x 64 SOJ version (DE-11) 1 Meg x 64 TSOJ version (DE-12) 2 Meg x 64 (shown), (DE-10) 4 Meg x 64


    OCR Scan     		PDF MT8LD264A MT16LD464A 168-pin, 024-cycle 048-cy MT8L0264A MT16LD44MA marking 4LD CSR 6110

    5 PEN PC TECHNOLOGY advance

    Abstract: No abstract text available
    Text: ADVANCE MT2D T 132 B, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 BURST EDO DRAM MODULES M IC R O N I rECMNOLOGV NC.- 1, 2, 4 MEG [BURST EDO IDRAM MODULE X 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-line memory modu e (SIM M ) • Burst EDO order, interleave or linea •, programmer by


    OCR Scan     		PDF MT4D232 MT8D432 72-pin, 024-cycle 048-cycle 5 PEN PC TECHNOLOGY advance