MT4S03U
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE MT4S03U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MTA<;n3ii V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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MT4S03U
MT4S03U
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MT4S03U TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03U V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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MT4S03U
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MT4S03U
Abstract: No abstract text available
Text: TOSHIBA MT4S03U TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03U VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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MT4S03U
MT4S03U
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MT4S03U
Abstract: No abstract text available
Text: MT4S03U TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03U Unit in mm VHF—UHF SAND LOW NOISE AMPLIFIER APPLICATIONS J ¿5*0.1 # Low Noise ; Figure ; NF = 1.4 dB • High Gain : Gain —9 dB f = 2 GHz r— a 1 •Q MAXIMUM RATINGS (Ta = 2SX)
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T4S03U
MT4S03U
MT4S03U
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