micron sram
Abstract: MS-026
Text: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 2Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD
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Original
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PDF
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MT58LC128K18B4,
MT58LC64K32B4,
MT58LC64K36B4;
MT58LC128K18E1,
MT58LC64K32E1,
MT58LC64K36E1
micron sram
MS-026
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I|— C 3nP vl I Mi — 128K x 18, 64K x 32/36 2. 5V I/O, FLOW -THROUGH SYN CBUR ST SRAM MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 SYNCBURST SRAM 3.3V Supply, 2.5V I/O, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • •
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OCR Scan
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PDF
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MT58LC128K18E1,
MT58LC64K32E1,
MT58LC64K36E1
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 2Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times
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OCR Scan
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PDF
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MT58LC128K18B4,
MT58LC64K32B4,
MT58LC64K36B4;
MT58LC128K18E1,
MT58LC64K32E1,
MT58LC64K36E1
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Untitled
Abstract: No abstract text available
Text: ADVANCE M ir a n M • 128K x 18, 64K x 32/36 2.5V I/O, FLOW-THROUGH SYNCBURST SRAM Q X /M f^ D I in Q O T I N v / D U l l O O D T I A IV Jl MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 3-3V Supply, 2.5V I/O, Flow-Through and Burst Counter FEATURES • •
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OCR Scan
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PDF
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MT58LC128K18E1,
MT58LC64K32E1,
MT58LC64K36E1
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Untitled
Abstract: No abstract text available
Text: lU II^ E 3 H N I 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM O I M I I > C V M P D I ID O T Z IV ID O Y I M U D U n O I O D A A il O n IV I MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 3 .3 V V dd , 3.3V or 2.5V I/O, Flow-Through
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OCR Scan
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PDF
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MT58LC128K18B4,
MT58LC64K32B4,
MT58LC64K36B4;
MT58LC128K18E1,
MT58LC64K32E1,
MT58LC64K36E1
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TOP SIDE MARKING OF MICRON
Abstract: marking y41
Text: ADVANCE 1 2 8 Kx1 8 > 6 4 Kx32/36 MICRDN • Q w | O Y I M O D O K 2. 5V I/O, F L O W - T H R O U G H S Y N C B U R S T S R A M D I I D C O D U n O T M T 5 8L C 12 8 K 18 E 1, M T 58 L C 64 K 32 E 1, MT58LC64K36E1 I A Ail A IV I 3.3V Supply, 2.5V I/O, Flow-Through and
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OCR Scan
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PDF
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MT58LC64K36E1
100-PIN
TOP SIDE MARKING OF MICRON
marking y41
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3299c
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 2Mb SYNCBURST SRAM 3.3V V dd , 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times
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OCR Scan
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PDF
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100-lead
3299c
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Untitled
Abstract: No abstract text available
Text: ADVANCE fUHf— p a n i s i 1 MT58LC64K32/36E1 6 4 K x 32/36 SYNCBURST SRAM +3.3V SUPPLY, 2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10,11 and 12ns
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OCR Scan
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PDF
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MT58LC64K32/36E1
160-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N B MT58LC64K32/36E1 64K X 32/36 SYNCBURST SRAM TECHNOLOGY. INC SYNCHRONOUS SRAM 64K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and 11ns
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OCR Scan
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PDF
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MT58LC64K32/36E1
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC64K32/36E1 64K X 32/36 SYNCBURST SRAM MICRON • TECHNOLOGY. WC. 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • •
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OCR Scan
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PDF
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MT58LC64K32/36E1
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I in S n N n ^ " T 5 ÏÏL » S MT58LC64K32/36E1 64K X 32/36 SYNCBURST SRAM SYNCHRONOUS SRAM 64K X32/36 SRAM +3.3V SUPPLY, 2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • •
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OCR Scan
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PDF
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MT58LC64K32/36E1
X32/36
001524a
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC64K32/36E1 64K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES 100-Pin TQFP SA-1 « a * *El 8 w _i > 5 wc)C)C)k>CT) itUL C M to r- L
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OCR Scan
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PDF
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MT58LC64K32/36E1
100-Pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE |V |IC = R O N 64K SYNCHRONOUS SRAM X MT58LC64K32/36E1 32/36 SYNCBURST SRAM 64K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE Fast access times: 8.5, 9,10 and 11ns Fast OE# access time: 5ns Single +3.3V +0.3V/-0.165V power supply Vcc
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OCR Scan
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PDF
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MT58LC64K32/36E1
100-lead
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