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    MT5F Price and Stock

    ams OSRAM Group GW CSSRM1.CC-MSMT-5F-1-700-R18-XX

    LED OSLON WHITE SQUARE SMD
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    ams OSRAM Group GW CSSRM1.CC-MBMT-5F7G-K2L1-700-R18-TH

    LED OSLON WHITE SMD
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    Seoul Semiconductor STW8C2PB-E1-MT5FMCEY2M

    Mid-Power LED 3030B 3V Premium - Tape and Reel (Alt: STW8C2PB-E1-MT5FMC)
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    Avnet Americas STW8C2PB-E1-MT5FMCEY2M Reel 6 Weeks 4,500
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    Glenair Inc 550T003MT5F0B1F05

    EMI/RFI Split Backshell with Strain Relief for D-Subminiature Connectors DD Shell Size Straight Aluminum - Bulk (Alt: 550T003MT5F0B1F05)
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    Mouser Electronics 550T003MT5F0B1F05
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    Newark 550T003MT5F0B1F05 Bulk 1
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    Interstate Connecting Components 550T003MT5F0B1F05
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    Seoul Semiconductor STW8Q14D-00-MT5FMCEY3M

    Mid-Power LED, 5630D Series, Top View, White, Q14, T/R 4.5k - Tape and Reel (Alt: STW8Q14D-00-MT5FMC)
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    Avnet Americas STW8Q14D-00-MT5FMCEY3M Reel 6 Weeks 4,500
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    Find more MT5F price and stock on Findchips.com

    MT5F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MT5-F B&B SmartWorx Connectors, Interconnects - Terminal Blocks - Accessories - Marker Strips - MARKING TAG F ER2.5-70 TB 500PC Original PDF
    MT5F10056 Fuji Electric IGBT Power Module Scan PDF
    MT5F10677 Fuji Electric IGBT Power Module Scan PDF
    MT5F10855 Fuji Electric IGBT Power Module Scan PDF

    MT5F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Tentative target Device Name : IGBT MODULE Type Name : 1MBI600UB-120 Spec. No. : Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 6 ‘03 S.Miyashita T.Miyasaka MT5F 14049 1 3 H04-004-07 1MBI600UB-120 Target specification (Tentative) 1. Outline Drawing ( Unit : mm )


    Original     		PDF 1MBI600UB-120 H04-004-07 1MBI600UB-120 H04-004-03

    Untitled

    Abstract: No abstract text available
    Text: May 10 '02 S.Yoshiwatari May 10 '02 S.Miyashita T. Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without


    Original     		PDF 6MBI225U-120 10874a MT5F1087a MAY-17- MAY-10- H04-004-03

    Untitled

    Abstract: No abstract text available
    Text: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without


    Original     		PDF 50A/1700V-6in1 6MBI450U-170 MT5F12546 H04-004-003

    6MBI50U4A-120

    Abstract: ED-4701 MS5F6015 MT5F12959
    Text: SPECIFICATION Device Name : IGBT MODULE Type Name : 6MBI50U4A-120 Spec. No. Jan. 18 ’05 S.Miyashita Jan. 18 ’05 T.Miyasaka K.Yamada : Y.Seki MS5F 6015 MS5F6015 1 a 13 H04-004-07b R e v i s e d Date Classification Jan.-18 -’05 Enactment Oct.-25-’05


    Original     		PDF 6MBI50U4A-120 MS5F6015 H04-004-07b P4/13) H04-004-06b H04-004-03a 6MBI50U4A-120 ED-4701 MS5F6015 MT5F12959

    1MBI600U4-120

    Abstract: ED-4701 MS5F6040 MT5F12959
    Text: SPECIFICATION Device Name : IGBT MODULE Type Name : 1MBI600U4-120 Spec. No. Feb. 15 ’05 S.Miyashita Feb. 15 ’05 T.Miyasaka K.Yamada : Y.Seki MS5F 6040 MS5F6040 1 13 H04-004-07b R e v i s e d Date Classification Feb.-15 -’05 Enactment Ind. Content R e c o r d s


    Original     		PDF 1MBI600U4-120 MS5F6040 H04-004-07b H04-004-06b H04-004-03a 1MBI600U4-120 ED-4701 MS5F6040 MT5F12959

    2MBI800UG-170

    Abstract: ED-4701 MT5F12959 1600A 1700V
    Text: SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI800UG-170 Spec. No. : MS5F 5924 Sep. 30 ’04 T.Nishimura Sep. 30 ’04 T.Miyasaka Y.Seki MS5F5924 1 13 H04-004-07b R e v i s e d Date Classification Sep.-30-’04 Enactment Ind. Content R e c o r d s


    Original     		PDF 2MBI800UG-170 MS5F5924 H04-004-07b H04-004-06b 2MBI800UG-170 H04-004-03a 17trial ED-4701 MT5F12959 1600A 1700V

    Untitled

    Abstract: No abstract text available
    Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any


    Original     		PDF 00A/1200V-2in1 MT5F16506 2MBI800U4G-120 14-Jul-05 H04-004-007 H04-004-003

    2MBI450U4N-120-50

    Abstract: 2mbi450u4n ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT MODULE RoHS compliant product Type Name Spec. No. Feb. 14 ’06 : : 2MBI450U4N-120-50 MS5F 6507 H.Kaneda Feb. 14 ’06 M.W atanabe T.Miyasaka K.Yamada MS5F6507 a 1 14 H04-004-07b R e v i s e d Date Classification Feb. -14 -’06


    Original     		PDF 2MBI450U4N-120-50 MS5F6507 H04-004-07b P3/14) H04-004-06b 2MBI450U4N-120-50 H04-004-03a 2mbi450u4n ED-4701 MT5F12959

    2MBI450U4E-120

    Abstract: 2mbi450u4e 2mbi450u4e120 ms5f6057 ED-4701 MT5F12959 2MBI450U4
    Text: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI450U4E-120 MS5F 6057 MS5F6057 1 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Ind. Content R e c o r d s


    Original     		PDF 2MBI450U4E-120 MS5F6057 H04-004-07b H04-004-06b H04-004-03a 2MBI450U4E-120 2mbi450u4e 2mbi450u4e120 ms5f6057 ED-4701 MT5F12959 2MBI450U4

    6MBI225U-170

    Abstract: ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI225U-170 Spec. No. : MS5F 5391 Fuji Electric Co.,Ltd. Matsumoto Factory Mar. 3 ’03 S.Yoshiwatari Mar. 3 ’03 T.Miyasaka Mar.- 3 -’03 K.Yamada T.Fujihira MS5F 5391 1 14 H04-004-07 Revised Records


    Original     		PDF 6MBI225U-170 H04-004-07 H04-004-06 H04-004-03 6MBI225U-170 ED-4701 MT5F12959

    2MBI200UD-120

    Abstract: ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI200UD-120 Spec. No. : MS5F 5444 Fuji Electric Co.,Ltd. Matsumoto Factory Apr. 25 ’03 Y.Kobayashi Apr. 25 ’03 T.Miyasaka K.Yamada T.Fujihira MS5F 5444 a b 1 13 H04-004-07 Revised Records Date Classification


    Original     		PDF 2MBI200UD-120 H04-004-07 P4/13) H04-004he H04-004-03 2MBI200UD-120 ED-4701 MT5F12959

    2MBI300UD-120

    Abstract: No abstract text available
    Text: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTAT1VE> U -series 2 M B I3 0 0 U D -1 2 0 Target specification 1. Outline Drawing ( Unit : mm ) This ma lerïal and the Information herein is the property of Fuji Etectnc Co.Ltd.They shall be neither reproduced, copied,


    OCR Scan     		PDF 2MBI300UD-120 MT5F12225 2MBI300UD-120

    2MBI200UB-120

    Abstract: No abstract text available
    Text: Fuji Hitachi P ow er S em iconductor Co., Ltd IG B T D evelopm ent D ept. S ection M12 <TENTATIVE> U-series 2M B I200U B -120 Target specification 1. Outline Drawing ( Unit : mm ) E2. Cl consent of Fuji Electric Co. L td . CÆ 1 2 3 = 0 2 40 -0 2 TUB TYPE TERMINALS


    OCR Scan     		PDF 2MBI200UB-120 MT5F12209 2MBI200UB-120

    2MBI75UA-120

    Abstract: No abstract text available
    Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2 M B I7 5 U A - 1 2 0 Target specification This material and the information herein is the property of Fuji Slecmc Co .Ltd.They shall be neither reproduced, copied


    OCR Scan     		PDF 2MBI75UA-120 MT5F12226 200V/75A MT5F12226 2MBI75UA-120

    pj 899 diode

    Abstract: pj 899 2sk mosfet DD01 it900
    Text: 2 S K 1 5 1 2 MAE 1> • 52307=12 ÜDDlflES ISS C0LH1ER SEMICONDUCTOR INC Scope This specifies Fuji power MOSFET Outline I Construction Q ) Application IS ) Outview “ Ial*i£ > S 3 2 i«i "2O5 3 _j a 3 5 o 0: « ? “ &Ô “ a ORu is e t oi¿ £s § s S


    OCR Scan     		PDF MK5C25623) IC0LT-39 T0-228AA SC-65 MK5C25624 pj 899 diode pj 899 2sk mosfet DD01 it900

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N I M T58LC 128K 16/18C5 128K X 16/18 S Y N C B U R S T SRAM TECHNOLOGY ir.C SYNCHRONOUS SRAM 128KX 16/18 SRAM +3.3V SUPPLY, PIPELINED A N D SELECTABLE B U R S T C O U N T E R FEATURES • • • • • • • • • • • • • • • •


    OCR Scan     		PDF T58LC 16/18C5 128KX T58LC128K16C5 T58LC128K18C5 100-pin MT58LC128K16/18CS

    7MBP25RU2A120

    Abstract: marking code C1L 100DC AC2500 ED-4701 H04-004 HCPL-4504 MT5F12959 block diagram of electric cooker
    Text: This m aterial and the inform ation herein is the p ro p e rty o f Fuji E lectric D evice Technology C o., Ltd. They shall be neither reproduced, copied .lent, or disclosed in any w ay w hatsoever for the use of any third party nor used fo r the m anufacturing purposes w ithou t the exp ress w ritte n consent of


    OCR Scan     		PDF H04-004 7MBP25RU2A120 marking code C1L 100DC AC2500 ED-4701 H04-004 HCPL-4504 MT5F12959 block diagram of electric cooker

    z1071

    Abstract: No abstract text available
    Text: ADVANCE |U |IC R O N 32K SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5,5,5.5 and 6ns Fast OE# access times: 4.5,4.8, 5.5 and 6ns +3.3V +0.3V/-0.165V power supply (Vcc)


    OCR Scan     		PDF MT58LC32K32/36F1 z1071

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 128Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • PIN ASSIGNMENT Top View F a st a c c e s s tim e s: 4.5, 5, 5.5, 6 a n d 7 n s F a st O E # a c c e s s tim e: 4.5, 5, 5.5 a n d 6 n s


    OCR Scan     		PDF MT58LC128K16/18F1 MT5fl4-Cl20Kl6/1

    MT58LC256K18

    Abstract: ct901
    Text: ADVANCE 256K SYNCHRONOUS SRAM 256Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View F ast access tim es: 4.5, 5, 5.5, 6 an d 7ns


    OCR Scan     		PDF MT58LC256K16/18F1 MT58LC256K MT58LC256K18 ct901

    2SK10

    Abstract: 2SK1016 ISE40
    Text: Fuji power MOSFET Specification 2 S 1. Scope This specifies Fuji power MOSFET 2. Outline I Construction II ) Appi ication M) Outview 1 1 6 — O l 2 S K 1 0 16 — 0 1 N-channel enhancement mode power MOSFET for switching Î0-3P MK5C24097) 3. Absolute naxiatua ratings


    OCR Scan     		PDF 2SK10 MK5C24097) 2SKl016 2SK1016 MK5C24097 ISE40

    1MBH50-090

    Abstract: No abstract text available
    Text: Ratings and characteristics of FUJI IGBT 1. 1M B H 5 0 - 0 9 0 M B T 0 0 2 2. Abosolute aaxinun ratings (Tc=25T) Items Symbols Conditions Unit Ratings Collector-Enitter Voltage V CES 900 V Gate-Eaitter Voltage VCES ± 20 V Ic 50 A I cr 150 Hax.Power dissipation


    OCR Scan     		PDF 5F3206-% 1MBH50-090' MT5F3206 MT5F32Q6 W5F3206 MT5F3206 1MBH50-090

    100300

    Abstract: ic lm 7500
    Text: This material and lho information herein is the property of Fuji Elecmc Co.Ltd They shall be neither reproduced copied lent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.


    OCR Scan     		PDF 0S-120 trTCl25TC 100300 ic lm 7500

    251C

    Abstract: 500C a052d
    Text: Target Specification of 1. Outline Drawine Unit 2MB I 1 5 0 S - 120 : mm « 'C r = i w ° Os i♦S Í ’ Û. S «V € et»3 ¿ .J • * e «w. cO) << Ç•? i . !£ lIV *g; 2 ‘ > ’ z. *J¿ •gül ? . ? € c ;ì « ? s2 :* «« ,o ; .ç ? Tab type temurvaJs


    OCR Scan     		PDF 150S-120 a052D4 251C 500C a052d