Untitled
Abstract: No abstract text available
Text: MT6L61AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
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MT6L61AS
MT3S07S
MT3S04AS
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MT3S04AS
Abstract: MT3S07S MT6L61AS
Text: MT6L61AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L61AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
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Original
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MT6L61AS
MT3S07S
MT3S04AS
MT3S04AS
MT3S07S
MT6L61AS
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PDF
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MT3S04AS
Abstract: MT3S07S MT6L61AS
Text: MT6L61AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Maximum Ratings Ta = 25°C Characteristics Rating Symbol Unit Q1 Q2 Collector-base voltage
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Original
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MT6L61AS
S21e2
MT3S04AS
MT3S07S
MT6L61AS
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L61AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L61AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
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Original
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MT6L61AS
MT3S07S
MT3S04AS
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PDF
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FET K161
Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
FET K161
Transistor C2216
Transistor k161
k161 jfet
k192a
Transistor C2668
fet k241
k161 mosfet
Transistor C2347
Transistor C1923
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PDF
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