MTH13N50
Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Text: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:
|
Original
|
PDF
|
MJE8502A
O-220AB/TO-220:
MJF16010A
O-254
MJF16018
MJF16206
MTH13N50
MTM565
MRF531
MM3220
MM1758
MM3904
MM3004
mth5n100
MTM26N40E
MTH7N50
|
MTH13N50E
Abstract: No abstract text available
Text: MOTOROLA SC ÍXSTRS/R F> 2bE D • b3b?2S4 0 0 ^ 0 4 ñ Order this data sheet by MTH13N50E/D MOTOROLA E3 SEMICONDUCTOR TECHNICAL DATA MTH13N50E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET
|
OCR Scan
|
PDF
|
MTH13N50E/D
MTH13N50E
swi065
O-218AC
C66760
MTH13N50E
|
MTH13N50E
Abstract: MTG9N50E MTH13N50 AN569 DS3903 mosfet ss 544
Text: Order this data sheet by MTG9N50E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Full Pak Isolated TM OS E-FET High Energy Pow er M O SFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.4 OHM MAX 500 VOLTS This advanced high voltage TM O S E-FET is designed to w ith
|
OCR Scan
|
PDF
|
MTG9N50E/D
MTG9N50E/D
MTH13N50E
MTG9N50E
MTH13N50
AN569
DS3903
mosfet ss 544
|