MTH6N100E Search Results

MTH6N100E Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MTH6N100E		On Semiconductor	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate		Original	PDF
MTH6N100E		Unknown	FET Data Book		Scan	PDF

MTH6N100E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN569 Abstract: U425 Text: Order this data sheet by MTH6N100E/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s MTH6NIOOE Data sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.	Original	MTH6N100E/D O-218AC AN569 U425	PDF
MTH13N50 Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50 Text: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:	Original	MJE8502A O-220AB/TO-220: MJF16010A O-254 MJF16018 MJF16206 MTH13N50 MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50	PDF
MTE100N05 Abstract: MTE200N05 MTE120N18 MTH7N50 MTE120N20 MTE100N06 MTE200N06 MTE65N15 MTH5N95 MTH6N100 Text: - 280 - S s MTE65N15 MTE75N08 MTE75N10 MTE100N05 MTE100N06 MTE120N18 MTE120N20 MTE130N12 MTE13ÜN15 MTE150N08 MTE150N10 MTE200N05 MTE200N06 MTG9N50E MTG15P10 MTG20N20 MTH5N100 MTH5N95 MTH6N100 MTH6N100E MTH6N55 MTH6N6Û MTH6N85 MTH6N9Û MTH7N45 MTH7N50 MTH8N35	OCR Scan	MTE65N15 CASE353-01 MTE75N08 MTE75N10 MTH6N90 T0-218AC MTH7H45 MTH7N50 MTE100N05 MTE200N05 MTE120N18 MTE120N20 MTE100N06 MTE200N06 MTH5N95 MTH6N100	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SC ÍXSTRS/R F> HbE D Order this data sheet by MTH6N100E/D b3b72S4 QÜ'lQ'nb 4 MOTOROLA • i SEMICONDUCTOR S TECHNICAL DATA ■ MTH6N100E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancem ent-Mode Silico n Gate T M O S P O W E R FET	OCR Scan	b3b72S4 MTH6N100E/D MTH6N100E O-218AC C6676Ó	PDF
2N3904 Abstract: AN1040 AN569 DS3902 MTG4N100E MTH6N100E Text: Order this data sheet by MTG4N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTG4N100E Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES rDS on = 2.0 OHMS M AX 1000 VOLTS	OCR Scan	MTG4N100E/D MTG4N100E/D 2N3904 AN1040 AN569 DS3902 MTG4N100E MTH6N100E	PDF