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    MTP35N06ZL Search Results

    MTP35N06ZL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP35N06ZL Toshiba Power MOSFETs Cross Reference Guide Original PDF

    MTP35N06ZL Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP35N06ZL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP35N06ZL HDTMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 35 AMPERES 60 VOLTS RDS on = 26 mΩ This advanced high voltage TMOS E–FET is designed to


    Original     		PDF MTP35N06ZL/D MTP35N06ZL MTP35N06ZL/D*

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    mgb20n40cl

    Abstract: MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530
    Text: Example of exceptions: MTD/MTP3055E Example of exceptions: MTD/MTP2955E CHANNEL POLARITY, N OR P VOLTAGE RATING DIVIDED BY 10 OPTIONAL SUFFIX: L FOR LOGIC LEVEL E FOR ENERGY RATED T4 FOR TAPE & REEL DPAK/D2PAK RL FOR TAPE & REEL (DPAK/D3PAK) HD FOR HIGH CELL DENSITY


    Original     		PDF MTD/MTP3055E MTD/MTP2955E MTP75N06HD O-220 O-220 O-247 O-264 OT-227B MMSF4P01HDR1 SG265/D mgb20n40cl MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530

    MTP35N06ZL

    Abstract: RY 228
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t P review MTP35N06ZL HDTM O S E-FET P o w er Field E ffe c t T ran sisltor N-Channel Enhancement-Mode Silicon Gate TM O S POW ER FET 35 A M P E R E S 6 0 VO LTS T h is a d v a n c e d h ig h v o lta g e T M O S E - F E T is d e s ig n e d to


    OCR Scan     		PDF