diode marking code MU
Abstract: K sc70 LM1MA142WKT1 LM1MA141WKT1 LM1MA141WKT1G LM1MA141WKT3 LM1MA141WKT3G marking code MT mu diode Diode marking CODE 5M
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1 LM1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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LM1MA141WKT1
LM1MA142WKT1
SC-70
70/SOT
LM1MA141/2WKT1
inch/3000
LM1MA141/2WKT3
inch/10
LM1MA141/2WKT1-3/4
LM1MA141WKT1
diode marking code MU
K sc70
LM1MA142WKT1
LM1MA141WKT1G
LM1MA141WKT3
LM1MA141WKT3G
marking code MT
mu diode
Diode marking CODE 5M
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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PDF
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LM1MA141WKT1G
LM1MA142WKT1G
SC-70
LM1MA141WKT1G
LM1MA142WKT1
70/SOTâ
32VOLTAGE
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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PDF
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LM1MA141WKT1G
LM1MA142WKT1G
SC-70
LM1MA141WKT1G
LM1MA142WKT1
70/SOTâ
32RSE
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LM1MA142WKT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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PDF
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SC-70
LM1MA141WKT1G
S-LM1MA141WKT1G
LM1MA142WKT1G
S-LM1MA142WKT1G
70/SOTâ
AEC-Q101
LM1MA141WKT1G,
LM1MA142WKT1G,
LM1MA142WKT1G
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M1MA142WKT1
Abstract: dual reverse diode
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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PDF
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M1MA141WKT1
M1MA142WKT1
SC-70
70/SOT
M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA142WKT2
M1MA142WKT1
dual reverse diode
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diode T3 Marking
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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LM1MA141WKT1G
LM1MA142WKT1G
SC-70
70/SOTâ
LM1MA141WKT1G
diode T3 Marking
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TV-5 18VDC
Abstract: FTR-K1CK012W FTR-K1AK028T TV-5120VAC CK005
Text: FTR-K1 SERIES POWER RELAY 1 POLE - 16A LOW PROFILE TYPE RoHS compliant FTR-K1 Series n FEATURES Low profile height: 15.7mm l HIGH ISOLATION5 Insulation Distance (between coil and contacts: 10mm min.) Dielectric strength: 5KV Surge strength: 10KV l Class F coil
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td 1410
Abstract: IRF6633TR1PBF IRF6633TRPBF diode marking code MU
Text: PD - 97122A IRF6633APbF IRF6633ATRPbF DirectFET Power MOSFET RoHS Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm)
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7122A
IRF6633APbF
IRF6633ATRPbF
td 1410
IRF6633TR1PBF
IRF6633TRPBF
diode marking code MU
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250A DIODE
Abstract: No abstract text available
Text: PD - 97122 IRF6633APbF IRF6633ATRPbF DirectFET Power MOSFET RoHS Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm)
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IRF6633APbF
IRF6633ATRPbF
250A DIODE
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Untitled
Abstract: No abstract text available
Text: PD - 97122A IRF6633APbF IRF6633ATRPbF DirectFET Power MOSFET Typical values unless otherwise specified RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses
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7122A
IRF6633APbF
IRF6633ATRPbF
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TRANSISTOR 318
Abstract: BSP 312 BSP318 MU diode MARKING CODE
Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223
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OCR Scan
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OT-223
Q67000-S127
E6327
OT-223
TRANSISTOR 318
BSP 312
BSP318
MU diode MARKING CODE
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transistor marking c y um-1
Abstract: MU MARKING CODE siemens SD 222 M BSP 229 diode marking 226
Text: SIEMENS BSP 171 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = -0.8.-2.0 V Type b -1.7 A BSP 171 VDS -60 V Type BSP 171 Ordering Code Q67000-S224 ^DS(on) Package Marking 0.35 n SOT-223
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OCR Scan
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PDF
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OT-223
Q67000-S224
E6327
transistor marking c y um-1
MU MARKING CODE
siemens SD 222 M
BSP 229
diode marking 226
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transistor k 316
Abstract: Diode T 316
Text: SIEMENS BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type ^b s b ^DS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 n SOT-223 BSP 316 Type BSP 316 Ordering Code Q67000-S92 Tape and Reel Information
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OCR Scan
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PDF
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OT-223
Q67000-S92
E6327
transistor k 316
Diode T 316
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Diode BAY 74
Abstract: BAY74 BAV74 74 MARKING
Text: SIEM EN S Silicon Switching Diode Array BAV 74 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 74 JAs Q62702-A693 Pin Configuration Package1) 3 SOT-23 IK o CHAO7004 Maximum Ratings per Diode Parameter Symbol Values
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OCR Scan
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Q62702-A693
OT-23
CHAO7004
H800069
BAV74
Diode BAY 74
BAY74
BAV74
74 MARKING
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a2 marking
Abstract: Q62702-A1066 Marking Code to on semiconductor 720
Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065
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OCR Scan
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Q62702-A1065
Q62702-A1066
Q62702-A1067
0-04W
0-05W
0-06W
OT-323
EHD07I67
a2 marking
Marking Code to on semiconductor 720
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diode marking code MU
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm OUTLINE Package : ITO-3P D30SC4M Unit-mm Weight 4.3g Typ 5.5 40V 30A Control No. • Tj=150°C • P rr sm Rating • PRRSM T ’A ' i ^ V Î ' I ' K i E • Date code Feature m w m • Tj=150°C 7 ) [Æ - J U K @ 0192
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OCR Scan
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D30SC4M
i50Hz
diode marking code MU
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Untitled
Abstract: No abstract text available
Text: U - U T .Ç 'tt- K Super Fast Recovery Diode Axial Diode m m t vt-Äm outline dimensions S3L40 Case : 1.4¿ 7 -n 5 25 « ; 25« 400V 3A i 4.4 -8Ï 1 " 1 * • f î y 'i'X D ° w- •trrS O n s • S ii S ? g * f f 5 * s e s ij( £ ) ^ Color code (Yellow)
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OCR Scan
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PDF
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S3L40
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information If Order Number / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0K& 1.0mA LND250K1 BV dsx / b v dgx 500V Idss where = 2-week alpha date code *S am e as SO T-23. All units shipped on 3,000 piece ca rrie r tape reels.
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OCR Scan
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LND250
OT-23:
O-236AB*
LND250K1
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sot-23 MARKING CODE GS 5
Abstract: No abstract text available
Text: TN2124 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package Product marking for SOT-23: BVdss/ ^DS O N ^ G S (th ) BV dgs (max) (max) SOT-23 N 1C* 240V 8£2 1.8V TN2124K1 where * = 2-week alpha date code
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OCR Scan
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TN2124
OT-23
TN2124K1
OT-23:
120mA
120mA,
120mA
140mA
sot-23 MARKING CODE GS 5
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2N7002 MARKING 712
Abstract: 2N7002 800mA SOT-23 Marking code MU
Text: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVoss / BVoos R d S<ON ' d ON) (max) (min) TO-236AB* 702* 60V 7.5Q 0.5A 2N7002 where * = 2-week alpha date code “Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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OCR Scan
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2N7002
O-236AB*
O-236AB:
OT-23.
2N7002 MARKING 712
2N7002 800mA
SOT-23 Marking code MU
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SOT-23 Marking code MU
Abstract: AS SOT-23 F 5 Ld SOT-23 N1T SOT23
Text: TN2130 Low Threshold Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVoss / Order Number / Package Product marking for SOT-23: RdS<ON max) ^GS(th) BVoos (max) TO-236AB* N1T* 300V 25Q 2.4V TN2130K1 where * = 2-week alpha date code
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OCR Scan
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TN2130
O-236AB*
TN2130K1
OT-23:
OT-23.
TN2130
SOT-23 Marking code MU
AS SOT-23
F 5 Ld SOT-23
N1T SOT23
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Q62702-S654
Abstract: No abstract text available
Text: SIEMENS BSP 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • V GS th = 1 . 5 . . . 2 . 5 V Type Vos h BSP 125 600 V 0.12 A Type BSP 125 BSP 125 Ordering Code Q62702-S654 Q67000-S284 ffDS(on) 45 Q Package Marking SOT-223 BSP 125
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OCR Scan
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OT-223
Q62702-S654
Q67000-S284
E6327
E6433
OT-223
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type Vqs h BSP 297 200 V 0.65 A Type BSP 297 Ordering Code Q67000-S068 ^DS(on) Package Marking 2Q SOT-223 BSP 297 Tape and Reel Information
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OCR Scan
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OT-223
Q67000-S068
E6327
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SOT-23 Product Code bss123
Abstract: DSS SOT23 marking 9a sot-23
Text: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code
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OCR Scan
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OT-23
BSS123
OT-23:
SOT-23 Product Code bss123
DSS SOT23
marking 9a sot-23
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