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    MULTILAYER CERAMIC CAPACITOR 10 UF TDK Search Results

    MULTILAYER CERAMIC CAPACITOR 10 UF TDK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    MULTILAYER CERAMIC CAPACITOR 10 UF TDK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Open Mode Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Oct 2013 003-01 / 20130929 / mlcc_commercial_openmode_en MULTILAYER CERAMIC CHIP CAPACITORS


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    C2012 CC0805] C3216 CC1206] C3225 CC1210] C4532 CC1812] C5750 CC2220] PDF

    c3216x7r TDK

    Abstract: c3216x7r1c475 C5750X5R1A686M c3216x5r C5750X5R0J107M C3216X5R1A475 C3216X7R1C105K capacitor 1000 uf 25v C5750X5R1C476M C3216X7R1C225
    Text: TDK Hi Caps TDK Electronics Europe GmbH Head Office Wanheimer Straße 57 D - 40472 Düsseldorf, Germany Tel: 49 - 211 - 90 77-0 Fax: 49 - 211 - 41 49 84 E-mail: info@tdk.de TDK Electronics Italy Centro Commerciale Milano Est Scala H, Piano 1, Via Tolstoi 86


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    10kHz C3216X7R1C105K C3216X7R1C155K C3216X7R1C225K C3216X5R1A335K 100kHz c3216x7r TDK c3216x7r1c475 C5750X5R1A686M c3216x5r C5750X5R0J107M C3216X5R1A475 C3216X7R1C105K capacitor 1000 uf 25v C5750X5R1C476M C3216X7R1C225 PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS CKG Series Commercial Grade MEGACAP Type Type: CKG32K [EIA CC1210] CKG45K [EIA CC1812] CKG45N [EIA CC1812] CKG57K [EIA CC2220] CKG57N [EIA CC2220] Issue date: Oct 2013 004-01 / 20130929 / mlcc_commercial_megacap_en MULTILAYER CERAMIC CHIP CAPACITORS


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    CKG32K CC1210] CKG45K CC1812] CKG45N CKG57K CC2220] CKG57N PDF

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    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS CKG Series Automotive Grade MEGACAP Type Type: CKG32K [EIA CC1210] CKG45K [EIA CC1812] CKG45N [EIA CC1812] CKG57K [EIA CC2220] CKG57N [EIA CC2220] Issue date: Oct 2013 004-01 / 20130930 / mlcc_automotive_megacap_en MULTILAYER CERAMIC CHIP CAPACITORS


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    CKG32K CC1210] CKG45K CC1812] CKG45N CKG57K CC2220] CKG57N PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Oct 2013 C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025]


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    C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] C4520 CC1808] PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Jan 2014 C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025]


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    C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] C4520 CC1808] PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Aug 2013 C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] CKCN27 [EIA CC0302]


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    C2012 CC0805] C3216 CC1206] C3225 CC1210] C4520 CC1808] C4532 CC1812] PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series, CKC Series Automotive Grade Soft Termination Type: CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] CKCM25 [EIA CC0504] CKCL22 [EIA CC0805] Issue date:


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    CC0805] CC1206] CC1210] CC1808] CC1812] CC2220] CKCM25 CC0504] CKCL22 PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series, CKC Series Automotive Grade Soft Termination Type: CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] CKCM25 [EIA CC0504] CKCL22 [EIA CC0805]


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    CC0603] CC0805] CC1206] CC1210] CC1808] CC1812] CC2220] CKCM25 CC0504] CKCL22 PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series, CKC Series Automotive Grade Soft Termination Type: CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] CKCM25 [EIA CC0504] CKCL22 [EIA CC0805]


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    CC0603] CC0805] CC1206] CC1210] CC1808] CC1812] CC2220] CKCM25 CC0504] CKCL22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


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    BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN PDF

    BLF6G10LS-160RN

    Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


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    BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


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    BLF888 BLF888 PDF

    BLF6G22LS-75

    Abstract: RF35
    Text: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


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    BLF6G22LS-75 BLF6G22LS-75 RF35 PDF

    SmD TRANSISTOR a41

    Abstract: No abstract text available
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


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    BLF6G22LS-100 SmD TRANSISTOR a41 PDF

    BLF6G22LS-100

    Abstract: RF35
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


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    BLF6G22LS-100 BLF6G22LS-100 RF35 PDF

    BLF888A

    Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


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    BLF888A; BLF888AS BLF888A SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33 PDF

    smd transistor L33

    Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


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    BLF888A; BLF888AS BLF888A smd transistor L33 UT-090C-25 L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


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    BLF6G22LS-75 BLF6G22LS-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Soft Termination Type: C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] Issue date: Mar 2014


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    C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] C4520 CC1808] PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


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    BLF6G10S-45 BLF6G10S-45 PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series Automotive Grade Soft Termination Type: CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA7 [EIA CC1808] CGA8 [EIA CC1812] CGA9 [EIA CC2220] Issue date: Mar 2014 007-01 / 20140402 / mlcc_automotive_soft_en-01


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    CC0603] CC0805] CC1206] CC1210] CC1808] CC1812] CC2220] en-01 SpK230KE CGA8N4X7T2W474M230KE PDF

    d2375

    Abstract: BLF6G10S-45 RF35
    Text: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


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    BLF6G10S-45 BLF6G10S-45 d2375 RF35 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10-45 Power LDMOS transistor Rev. 02 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


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    BLF6G10-45 BLF6G10-45 PDF