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    MUR20040CT THRU MUR20060CTR Search Results

    MUR20040CT THRU MUR20060CTR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    MP-5TRJ12EXTE-007 Amphenol Cables on Demand Amphenol MP-5TRJ12EXTE-007 Modular Extension Cable, Straight-Thru, RJ12 7ft Datasheet
    MP-5FRJ11STWS-014 Amphenol Cables on Demand Amphenol MP-5FRJ11STWS-014 Flat Silver Satin Modular Straight-Thru Cables, RJ11 / RJ11 14ft Datasheet
    MP-5FRJ12STWS-025 Amphenol Cables on Demand Amphenol MP-5FRJ12STWS-025 Flat Silver Satin Modular Straight-Thru Cables, RJ12 / RJ12 25ft Datasheet

    MUR20040CT THRU MUR20060CTR Datasheets Context Search

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    ir10 diode

    Abstract: diode IR10 ir10 MUR20060CT MUR20040CT
    Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		MUR20040CT MUR20060CTR MUR20040CT MUR20060CT ir10 diode diode IR10 ir10 MUR20060CT PDF

    Untitled

    Abstract: No abstract text available
    Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		MUR20040CT MUR20060CTR MUR20040CT MUR20060CT PDF

    Untitled

    Abstract: No abstract text available
    Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 200 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		MUR20040CT MUR20060CTR MUR20040CT MUR20060CT PDF

    MUR20040CT thru MUR20060CTR

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MUR20040CT thru MUR20060CTR Super Fast Recovery Diode, 200A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original     		MUR20040CT MUR20060CTR MUR20060CT 040CT MUR20040CT thru MUR20060CTR PDF

    Untitled

    Abstract: No abstract text available
    Text: MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 400 V - 600 V IF AV = 200 A Features • High Surge Capability • Types from 400 to 600 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		MUR20040CT MUR20060CTR MUR20040CT MUR20060CT PDF