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    MUR3050 Search Results

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    MUR3050 Price and Stock

    Motorola Semiconductor Products MUR3050PT

    RECTIFIER DIODES,COMMON CATHODE,500V V(RRM),TO-218AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MUR3050PT 190
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    MUR3050PT 144
    • 1 $7.89
    • 10 $7.89
    • 100 $4.8655
    • 1000 $4.8655
    • 10000 $4.8655
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    Harris Semiconductor MUR3050PT

    MUR3050 - Rectifier Diode, Avalanche, 2 Channel, 15A, 500V '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MUR3050PT 4 1
    • 1 $2.48
    • 10 $2.48
    • 100 $2.33
    • 1000 $2.11
    • 10000 $2.11
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    MUR3050 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MUR3050PT Harris Semiconductor Ultrafast Recovery Rectifier Original PDF
    MUR3050PT Intersil 15A, 400V - 600V Ultrafast Dual Diodes Original PDF
    MUR3050PT Motorola European Master Selection Guide 1986 Scan PDF
    MUR3050PT Motorola Switchmode Power Rectifiers, 30 Amp, 50-600 Volts Scan PDF
    MUR3050PT Motorola Switchmode Datasheet Scan PDF
    MUR3050PT Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    MUR3050 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MUR3060PT

    Abstract: MUR3050PT MUR3040PT RURH1540C RURH1540CC RURH1550C RURH1550CC RURH1560C RURH1560CC
    Text: MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC S E M I C O N D U C T O R 15A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-218AC • +175oC Rated Junction Temperature


    Original     		MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC O-218AC 175oC MUR3060PT MUR3050PT MUR3040PT RURH1540C RURH1540CC RURH1550C RURH1550CC RURH1560C RURH1560CC PDF

    regulator 7812 ct

    Abstract: TRANSISTOR 7812 ct 7812 voltage regulator 5A 100k trimpot 1n5406 MOTOROLA Siemens Ferrite B64290 4229PL00-3C8 B64290-K45-X830 R16 N30 7812 12V 1A positive voltage regulator 7812 12V voltage regulator
    Text: April 1998 ML4812 Power Factor Controller GENERAL DESCRIPTION FEATURES The ML4812 is designed to optimally facilitate a peak current control boost type power factor correction system. Special care has been taken in the design of the ML4812 to increase system noise immunity. The circuit includes a


    Original     		ML4812 ML4812 regulator 7812 ct TRANSISTOR 7812 ct 7812 voltage regulator 5A 100k trimpot 1n5406 MOTOROLA Siemens Ferrite B64290 4229PL00-3C8 B64290-K45-X830 R16 N30 7812 12V 1A positive voltage regulator 7812 12V voltage regulator PDF

    BYW19-1000

    Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
    Text: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820


    Original     		FO-012 1-800-4-HARRIS BYW19-1000 BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    RURU10060

    Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
    Text: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.


    Original     		RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 RURU10060 MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010 PDF

    7812 12V 1A positive voltage regulator price

    Abstract: regulator 7812 ct 1k trimpot 7812 voltage regulator 5A motorola sc 7812 768T188-3C8 Ferroxcube 3C8 TRANSISTOR 7812 ct single phase IC1 7812 B64290-K45
    Text: April 1998 ML4812 Power Factor Controller GENERAL DESCRIPTION FEATURES The ML4812 is designed to optimally facilitate a peak current control boost type power factor correction system. Special care has been taken in the design of the ML4812 to increase system noise immunity. The circuit includes a


    Original     		ML4812 ML4812 7812 12V 1A positive voltage regulator price regulator 7812 ct 1k trimpot 7812 voltage regulator 5A motorola sc 7812 768T188-3C8 Ferroxcube 3C8 TRANSISTOR 7812 ct single phase IC1 7812 B64290-K45 PDF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA PDF

    MUR1520 equivalent

    Abstract: MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S
    Text: 75A/80A 100A 150A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR850 RURP1550 RURP850 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns† 1.5V MUR8100E RURP15100 RURP30100 RURG30100 RURG50100 RURG80100 RURU50100 RURU80100 RURU100100 RURU150100


    Original     		5A/80A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR1520 equivalent MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    UR3040PT

    Abstract: 15a42 1560c transistor lrw
    Text: MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC H A R R IS S E M I C O N D U C T O R 15A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-218AC • +175°C Rated Junction Temperature


    OCR Scan     		MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC O-218AC MUR3060PT UR3040PT 15a42 1560c transistor lrw PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCON] SECTOR b8E D m HARRIS • M3Q2571 GG5Gi4b0 2TÔ « H A S MUR3040PT, RURH1540CC MUR3050PT, RURH1550CC MUR3060PT, RURH1560CC S E M I C O N D U C T O R 15A, 400V - 600V Ultrafast Dual Diodes December 1993 Package Features JEDEC TO-218AC TOP VIEW


    OCR Scan     		M3Q2571 MUR3040PT, RURH1540CC MUR3050PT, RURH1550CC MUR3060PT, RURH1560CC O-218AC PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    MUR3040PT

    Abstract: MUR3050PT MUR3060PT RURD1540 RURD1550 RURD1560 2774.1 RUR01560
    Text: M UR3040PT M UR3050PT M UR3060PT HARRIS • H3QE271 0G424G7 ñb3 I IHAS HARRIS SEMICOND SECTOR 15A Ultrafast Dual Diode With Soft Recovery Characteristic 5bE D May 1992 • r - ; 2. 3 - 0 7 Package Features RURD1540 RURD1550 RURD1560 TO-218AC TOP VIEW U ltrafast w ith S o ft R eco very C haracteristic


    OCR Scan     		H3QH271 0G424G7 MUR3040PT, MUR3050PT, MUR3060PT RURD1540, RURD1550, RURD1560 MUR3040PT MUR3050PT RURD1540 RURD1550 2774.1 RUR01560 PDF

    igbt 200v 30a

    Abstract: mur1620 igbt 1000v 30a 30A100V diode 6A 100v
    Text: - MCT/IGBT/DI0DESÎ6 ULTRAFAST DUAL DIODES PAGE SELECTION G U ID E . 6-3 BYW51-100, BYW51-150,


    OCR Scan     		BYW51-100, BYW51-150, BYW51-200 MUR1610CT, MUR1615CT, MUR1620CT, RURP810CC, RURP815CC, RURP820CC MUR3010PT. igbt 200v 30a mur1620 igbt 1000v 30a 30A100V diode 6A 100v PDF