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    MURATA REEL LABEL FERRITE CHIP Search Results

    MURATA REEL LABEL FERRITE CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    MURATA REEL LABEL FERRITE CHIP Datasheets Context Search

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    STMicroelectronics marking code date sot-89

    Abstract: 3214W-1-103E D499 GRM1885C1H101JA01 START499D murata REEL label ferrite chip j353 transistor
    Text: START499D NPN RF silicon transistor Features • High efficiency ■ Common emitter configuration ■ Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz ■ Plastic package ■ Linear and non linear operation ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european


    Original     		PDF START499D 2002/95/EC OT-89 START499D OT-89 STMicroelectronics marking code date sot-89 3214W-1-103E D499 GRM1885C1H101JA01 murata REEL label ferrite chip j353 transistor

    Untitled

    Abstract: No abstract text available
    Text: LXDC55KAAA-205 Micro DC-DC converter 1. Features  Small footprint Buck converter for up to 3A output current application  Low EMI noise using an inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 2MHz operation


    Original     		PDF LXDC55KAAA-205 LXDC55K

    Untitled

    Abstract: No abstract text available
    Text: LXDC55FAAA-203 Micro DC-DC converter 1. Features  Wide Input voltage range : 4.0V to 14.0V  User Adjustable Output voltage : 0.8 to 5.3V  Small footprint Buck converter for up to 1.5A output current application  Low EMI noise by using an inductor-embedded ferrite substrate


    Original     		PDF LXDC55FAAA-203 LXDC55F

    Untitled

    Abstract: No abstract text available
    Text: LXDC55KAAA-205 Micro DC-DC converter 1. Features  Small footprint Buck converter for up to 3A output current application  Low EMI noise using an inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 2MHz operation


    Original     		PDF LXDC55KAAA-205 LXDC55K

    Untitled

    Abstract: No abstract text available
    Text: LXDC55FAAA-203 Micro DC-DC converter 1. Features  Wide Input voltage range : 4.0V to 14.0V  User Adjustable Output voltage : 0.8 to 5.3V  Small footprint Buck converter for up to 1.5A output current application  Low EMI noise by using an inductor-embedded ferrite substrate


    Original     		PDF LXDC55FAAA-203 LXDC55F

    Untitled

    Abstract: No abstract text available
    Text: LXDC55KAAA-205 Micro DC-DC converter 1. Features  Small footprint Buck converter for up to 3A output current application  Low EMI noise using an inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 2MHz operation


    Original     		PDF LXDC55KAAA-205 LXDC55K

    Untitled

    Abstract: No abstract text available
    Text: LXDC55FAAA-203 Micro DC-DC converter 1. Features  Wide Input voltage range : 4.0V to 14.0V  User Adjustable Output voltage : 0.8 to 5.3V  Small footprint Buck converter for up to 1.5A output current application  Low EMI noise by using an inductor-embedded ferrite substrate


    Original     		PDF LXDC55FAAA-203 LXDC55F

    Untitled

    Abstract: No abstract text available
    Text: LXDC2HL series Micro DC-DC converter 1. Features 2  Low EMI noise and small footprint 5mm using inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 3MHz operation  PFM/PWM automatic mode switching function


    Original     		PDF 600mA

    Untitled

    Abstract: No abstract text available
    Text: LXDC2HL series Micro DC-DC converter 1. Features 2  Low EMI noise and small footprint 5mm using inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 3MHz operation  PFM/PWM automatic mode switching function


    Original     		PDF 600mA

    Untitled

    Abstract: No abstract text available
    Text: LXDC2HL series Micro DC-DC converter 1. Features 2  Low EMI noise and small footprint 5mm using inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 3MHz operation  PFM/PWM automatic mode switching function


    Original     		PDF 600mA

    Untitled

    Abstract: No abstract text available
    Text: LXDC55KAAA-205 Micro DC-DC converter 1. Features  Small footprint Buck converter for up to 3A output current application  Low EMI noise using an inductor-embedded ferrite substrate  High efficiency using synchronous rectifier technology at 2MHz operation


    Original     		PDF LXDC55KAAA-205 LXDC55K

    Untitled

    Abstract: No abstract text available
    Text: LXDC55FAAA-203 Micro DC-DC converter 1. Features  Wide Input voltage range : 4.0V to 14.0V  User Adjustable Output voltage : 0.8 to 5.3V  Small footprint Buck converter for up to 1.5A output current application  Low EMI noise by using an inductor-embedded ferrite substrate


    Original     		PDF LXDC55FAAA-203 LXDC55F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS02-276RFPP

    J161 mosfet transistor

    Abstract: MOSFET J161 100B6R8JW
    Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW

    J555

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125EU AGR19125EF DS01-215RFPP J555

    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		PDF AGR21125E AGR21125EU AGR21125EF DS03-037RFPP DS03-012RFPP) sm 4500

    Transistor J182

    Abstract: No abstract text available
    Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR18090E DS02-326RFPP Transistor J182

    c5047

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09180E Hz--895 DS02-342RFPP c5047

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045EU AGR21045EF DS02-380RFPP DS02-276RFPP)

    Untitled

    Abstract: No abstract text available
    Text: TAT8801A1H 75 Ω CATV Output Stage Amplifier Applications • CATV Line Amplifiers • HFC Nodes • Head End Equipment 16-pin SOIC Wide Body Package with backside ground paddle Product Features Functional Block Diagram • Wide Bandwidth 40 MHz – 1 GHz


    Original     		PDF TAT8801A1H 16-pin TAT8801A1H

    Untitled

    Abstract: No abstract text available
    Text: TAT8858A1H CATV Infrastructure Push-Pull Amplifier Applications • • • • CATV Line Amplifiers CATV System Amplifiers Distribution Nodes Green Applications SOIC-16 Wide Package Product Features Functional Block Diagram 75 Ω, 50-1000 MHz Bandwidth GaAs pHEMT & MESFET Technology


    Original     		PDF TAT8858A1H SOIC-16

    Transistor J182

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19060E Hz--1990 AGR19060EU AGR19060EF DS01-216RFPP Transistor J182

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19090E Hz--1990 AGR19090EU AGR19090EF DS01-117RFPP

    LTC3631-3

    Abstract: LTC3642 schematic diagram 12v to 48 dc step up LTC3632 LTC3632E LTC3632EDD LTC3632EMS8E LTC3632I LTC3632IDD LTC3632IMS8E
    Text: LTC3632 High Efficiency, High Voltage 20mA Synchronous Step-Down Converter FEATURES DESCRIPTION n The LTC 3632 is a high efficiency step-down DC/DC converter with internal high side and synchronous power switches that draws only 12 A typical DC supply current


    Original     		PDF LTC3632 DFN16, TSSOP16E QFN24, 60VMAX) DFN10, MSOP10E 3632fa LTC3631-3 LTC3642 schematic diagram 12v to 48 dc step up LTC3632 LTC3632E LTC3632EDD LTC3632EMS8E LTC3632I LTC3632IDD LTC3632IMS8E