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    MUX DESIGN USING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    MUX DESIGN USING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7908 motorola

    Abstract: sda 5708 34 AC LM35 CC 200w power AB amplifier circuit diagram 640E6 AMP 11392 200w power amplifier circuit diagram sensor LM35 BB 7358 AN1741
    Text: LDMOS Transistors Bias Control in Basestation RF Power Amplifiers Using Intersil’s LUT-based Sensor Signal Conditioners Application Note August 15, 2005 AN174.1 Author: Jim Pflasterer Introduction Vdd LDMOS transistors are used for RF Power Amplification in


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    AN174 7908 motorola sda 5708 34 AC LM35 CC 200w power AB amplifier circuit diagram 640E6 AMP 11392 200w power amplifier circuit diagram sensor LM35 BB 7358 AN1741 PDF

    200w power AB amplifier circuit diagram

    Abstract: LM35 application circuits op-amp with 34 AC LM35 CC sensor LM35 ad5888 sensor for temperature LM35 200w motorola power amplifier circuit diagram 640E6 lm35 sensor interfacing with adc schematic diagram for ac line voltage conditioner
    Text: LDMOS Transistors Bias Control in Basestation RF Power Amplifiers Using Intersil’s LUT-based Sensor Signal Conditioners Application Note April 20, 2006 AN174.2 Author: Jim Pflasterer Introduction Vdd LDMOS transistors are used for RF Power Amplification in


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    AN174 200w power AB amplifier circuit diagram LM35 application circuits op-amp with 34 AC LM35 CC sensor LM35 ad5888 sensor for temperature LM35 200w motorola power amplifier circuit diagram 640E6 lm35 sensor interfacing with adc schematic diagram for ac line voltage conditioner PDF

    ATMEL 634

    Abstract: full adder circuit using nor gates buffer 8x nec inverter schematic atmel atl ATLV10 ATLV15 ATLV20 ATLV35 atmel 216
    Text: ATLV Features • • • • • • • Specifically Designed for Battery Powered Applications 1.0 - 3.0 Volts and will Operate from 0.7 to 5.5 Volts Static Current Drain of <75 nA at 1.0 Volt 200 MHz Maximum Toggle Frequency for Flip Flop at 1.5 Volts 1.0 µ Drawn Gate Length CMOS Gate Arrays


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    atmel 216

    Abstract: full adder circuit using nor gates jk flip flop to d flip flop conversion ATLV10 ATLV15 ATLV20 ATLV35 VHDL 8 bit Bidirectional resistor with tri-state atl80 CQFP 208
    Text: ATLV Features • • • • • • • Specifically Designed for Battery Powered Applications 1.0 - 3.0 Volts and will Operate from 0.7 to 5.5 Volts Static Current Drain of <75 nA at 1.0 Volts 200 MHz Maximum Toggle Frequency for Flip Flop at 1.5 Volts


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    ATMEL 634

    Abstract: atmel 216 atmel 635 full adder circuit using nor gates ATLV10 ATLV15 ATLV20 ATLV35 Mux design using transistor
    Text: ATLV Features x x x x x x x Specifically Designed for Battery Powered Applications 1.0 - 3.0 Volts and will Operate from 0.7 to 5.5 Volts Static Current Drain of <75 nA at 1.0 Volt 200 MHz Maximum Toggle Frequency for Flip Flop at 1.5 Volts 1.0 P Drawn Gate Length CMOS Gate Arrays


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    full adder circuit using nor gates

    Abstract: free transistor equivalent book Verilog code for 2s complement of a number verilog code for four bit binary divider 16 bit carry select adder verilog code hex to 7 segment decoder BASYS+3
    Text: Introduction to Digital Design Using Digilent FPGA Boards ─ Block Diagram / Verilog Examples Richard E. Haskell Darrin M. Hanna Oakland University, Rochester, Michigan LBE Books Rochester Hills, MI Copyright 2009 by LBE Books, LLC. All rights reserved. ISBN 978-0-9801337-9-0


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    HC08MP16

    Abstract: ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic
    Text: BR1480/D Silicon Solutions for Off Line Motor Drives • Application Specific MCU’s • Optoisolators • MOS Gate Drivers and Control IC’s • Discrete Insulated Gate Bipolar Transistors • Input Rectifiers • Hybrid IGBT Power Modules • High Voltage MOSFETS for Power Supply


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    BR1480/D K1TITC122/D K1TITC132/D HC08MP16 ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic PDF

    PCI-Express 2.0 Pin

    Abstract: Nippon capacitors
    Text: PI2PCIE412-D Enhanced, 1.8V, PCI-Express Compliant, 4-Differential Channel, 2:1 Mux/DeMux Switch, w/ Single Enable Features Description • • • • • • • • Pericom Semiconductor’s PI2PCIE412-D is an 8 to 4 differential channel multiplexer/demultiplexer switch. This solution can


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    PI2PCIE412-D -65dB 10MHz 42-contact, PS8788 42-Contact PCI-Express 2.0 Pin Nippon capacitors PDF

    32 bit carry select adder in vhdl

    Abstract: No abstract text available
    Text: Introduction to Digital Design Using Digilent FPGA Boards ─ Block Diagram / VHDL Examples Richard E. Haskell Darrin M. Hanna Oakland University, Rochester, Michigan LBE Books Rochester Hills, MI Copyright 2009 by LBE Books, LLC. All rights reserved. ISBN 978-0-9801337-6-9


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    mux21a 32 bit carry select adder in vhdl PDF

    Untitled

    Abstract: No abstract text available
    Text: NECES001 C P20K 0 .8 -M IC R O N NEC Electronics Inc. fpgas February 1993 Description Figure 1. CP20K FPGAs NEC Electronics Inc. and Crosspoint Solutions, Inc. have joined forces to offer to system designers an expedient way to prototype in Field Programmable Gate Arrays


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    NECES001 CP20K RAM8x16* RAM16x16* RAM32x16* RAM8x32* 16x32* RAM32x4* RAM64x4* PDF

    ATMEL 634

    Abstract: No abstract text available
    Text: ATLV Features • • • • • • • Specifically Designed for Battery Powered Applications 1.0 - 3.0 Volts and will Operate from 0.7 to 5.5 Volts Static Current Drain of <75 nA at 1.0 Volt 200 MHz Maximum Toggle Frequency for Flip Flop at 1.5 Volts 1.0 n Drawn Gate Length CMOS Gate Arrays


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    PDF

    AM3526

    Abstract: 2-bit half adder AM312 AM290 AM2019 AM2001 002074
    Text: ADVANCED MICRO D E V I C E S 7b D E j 0ES7SHS OOSOTbM ADVANCED MICRO D E V ICES 5 | 76C ¿ 0 9 6 4 D “¿T -.4-2-11-13 I" Mask-Programmable Gate Array With ECL RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 Internal cells - Up to 135 l/O s


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    1T-42-11-13 WF001164 00ECH7Ã T-42-11-13 AM3526 2-bit half adder AM312 AM290 AM2019 AM2001 002074 PDF

    Atmel 434

    Abstract: Atmel 224 2H92 SF1411
    Text: Features • 0.8 n effective gate lengths 1.0 |i drawn combined with close metal spacing provides outstanding speed/power performance • There is no new software to learn with Atmel's flexible design system • Design translation of existing ASIC, PLD and FPGA designs


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    0044D-10/91/5M Atmel 434 Atmel 224 2H92 SF1411 PDF

    SH100E

    Abstract: siemens SH100E elxr siemens Nand gate SH100E5 TRANSISTOR K 2191
    Text: 7 1991 SIEMENS ASIC Product Description SH100E ECL/CML Gale Amy Family FEATURES • Gate complexities from 1,500 to 16,000 gates ■ 120 ps gate delay, 90 ps differential • 1.5 GHz D flip-flop, 1.7 GHz differential ■ Both ECL and CML macro families ■ TTL I/O available


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    SH100E 10KH/100K M33S001 SH100E siemens SH100E elxr siemens Nand gate SH100E5 TRANSISTOR K 2191 PDF

    AM2019

    Abstract: 2-bit half adder layout AX253 AX201 AM2001 AX261
    Text: * Am3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS • • • Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns


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    Am3525 TC002800 7321A 7322A AM2019 2-bit half adder layout AX253 AX201 AM2001 AX261 PDF

    VHDL 8 bit Bidirectional resistor with tri-state

    Abstract: atmel 530 atmel 528 ATMEL 529
    Text: ATLV Features * Specifically Designed for Battery Powered Applications 1.0 - 3.0 Volts and will Operate from 0.7 to 5.5 Volts * Static Current Drain of <75 nA at 1.0 Volts * 200 MHz Maxim um Toggle Frequency for Flip Flop at 1.5 Volts * 1.0 n Drawn G ate Length CMOS Gate Arrays


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    atmel h 208

    Abstract: No abstract text available
    Text: A TL Features * 1.0 |i Drawn Gate Length High-performance CMOS Gate Arrays * All ATL Gate Arrays are Specified from 3.0 Volts to 5.5 Volts, for Standard and Low Voltage Applications * Design Translation of Existing ASIC Designs Provide for Easy Alternate Sourcing with Equivalent or Improved Performance


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    MIL-STD-883 MIL-STD-883 atmel h 208 PDF

    mx41 plc

    Abstract: 2-BIT Full-Adder CP20K NEC lcd inverter schematic NEC CP20K FPGA nec cmos CLS199 LDPC Decoder vhdl RAM64X4 9020 8pin
    Text: MAR i o 1983 C P20K 0 .8 -M IC R O N fp g a s NEC Electronics Inc. February 1993 Description Figure 1. CP20K FPGAs NEC Electronics Inc. and Crosspoint Solutions, Inc. have joined forces to offer to system designers an expedient way to prototype in Field Program m able Gate Arrays


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    CP20K mx41 plc 2-BIT Full-Adder NEC lcd inverter schematic NEC CP20K FPGA nec cmos CLS199 LDPC Decoder vhdl RAM64X4 9020 8pin PDF

    AOX2053

    Abstract: No abstract text available
    Text: ADVANC ED MICRO DEVICES 7b D E j 05575.25 0020=177 3 g " 025 7525 ADVANCED MICRO DEVICES r- Am3550 76C 2 0977 T - 4 2 - 1 1 —1 5 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 6228 equivalent gates - 576 internal cells


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    Am3550 WFR02682 AOX2053 PDF

    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet by MCA2200ECL/D M O TO RO LA MCA2200ECL 1 SEMICONDUCTOR TECHNICAL DATA MCA2200ECL MACROCELL ARRAY The MCA2200ECL Array is a m em ber of M otorola's "T h ird G eneration” MCA3 ECL series. M otorola's MOSAIC III process provides the MCA2200ECL w ith the logic pow er of over 2200


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    MCA2200ECL/D MCA2200ECL MCA2200ECL PDF

    Untitled

    Abstract: No abstract text available
    Text: ATL80 Features * 0.8 n drawn gate length combined with triple level metal provides outstanding speed/power performance * Design translation of existing ASIC, PLD and FPGA designs provide for easy alternate sourcing with equivalent performance * All ATL80 arrays can operate at 5.0 volts and 3.3 volts for lowpower applications


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    ATL80 ATL80 MlL-STD-883 PDF

    atmel 819

    Abstract: atmel h 208 atl80 atmel 823
    Text: ATL80 Features * 0.8 |i drawn gate length combined with triple level metal provides outstanding speed/power performance * Design translation of existing ASIC, PLD and FPGA designs provide for easy alternate sourcing with equivalent performance * All ATL80 arrays can operate at 5.0 volts and 3.3 volts for lowpower applications


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    ATL80 ATL80 MlL-STD-883 atmel 819 atmel h 208 atmel 823 PDF

    amd c-50

    Abstract: ATL100 ATL10C ATL130 ATL15C ATL160 ATL20 ATL20C ATL40 ATL60
    Text: ATL Features • 1.0 ji Drawn Gate Length High-performance CMOS Gate Arrays • All ATL Gate Arrays are Specified from 3.0 Volts to 5.5 Volts, for Standard and Low Voltage Applications • Design Translation of Existing ASIC Designs Provide for Easy Alternate Sourcing with Equivalent or Improved Performance


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    MIL-STD-883 0Q73CI3 amd c-50 ATL100 ATL10C ATL130 ATL15C ATL160 ATL20 ATL20C ATL40 ATL60 PDF

    ATMEL 708

    Abstract: MIL-STD-454L Atmel 434 SF1411 6822 TRANSISTOR equivalent 5 input nand gate atmel 206 CMOS GATE ARRAYs m38510 1076 ATL100
    Text: ju > j î o MB Features • 0.8 p. effective gate lengths (1.0 ^ drawn combined with close metal spacing provides outstanding speed/power performance • There is no new software to learn with Atmel's flexible design system • Design translation of existing ASIC, PLD and FPGA designs


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    0044D-10/91/5M ATMEL 708 MIL-STD-454L Atmel 434 SF1411 6822 TRANSISTOR equivalent 5 input nand gate atmel 206 CMOS GATE ARRAYs m38510 1076 ATL100 PDF